Abstract: A layer stack of different materials is deposited on a substrate in a single plasma enhanced chemical vapor deposition processing chamber while maintaining a vacuum. A substrate is placed in the processing chamber and a first processing gas is used to form a first layer of a first material on the substrate. A plasma purge and gas purge are performed before a second processing gas is used to form a second layer of a second material on the substrate. The plasma purge and gas purge are repeated and the additional layers of first and second materials are deposited on the layer stack.

Abstract: A method of forming a passivation layer comprising silicon nitride on features of a substrate is described. In a first stage of the deposition method, a dielectric deposition gas, comprising a silicon-containing gas and a nitrogen-containing gas, is introduced into the process zone and energized to deposit a silicon nitride layer. In a second stage, a treatment gas, having a different composition than that of the dielectric deposition gas, is introduced into the process zone and energized to treat the silicon nitride layer. The first and second stages can be performed a plurality of times.

Abstract: Methods of forming high-current density vertical p-i-n diodes on a substrate are described. The methods include the steps of concurrently combining a group-IV-element-containing precursor with a sequential exposure to an n-type dopant precursor and a p-type dopant precursor in either order. An intrinsic layer is deposited between the n-type and p-type layers by reducing or eliminating the flow of the dopant precursors while flowing the group-IV-element-containing precursor. The substrate may reside in the same processing chamber during the deposition of each of the n-type layer, intrinsic layer and p-type layer and the substrate is not exposed to atmosphere between the depositions of adjacent layers.