Abstract: Examples disclosed herein relate to device. The device includes a substrate, a plurality of adjacent pixel-defining layer (PDL structures disposed over the substrate, and a plurality of sub-pixels. The PDL structure have a top surface coupled to adjacent sidewalls of the PDL structure. The plurality of sub-pixels are defined by the PDL structures. Each sub-pixel includes an anode, an organic light emitting diode (OLED), a cathode, and an encapsulation layer. The organic light emitting diode (OLED) material disposed over the anode. The OLED material extends over the top surface of the PDL structure past the adjacent sidewalls. The cathode is disposed over the OLED material. The cathode extends over the top surface of the PDL structure past the adjacent sidewalls. The encapsulation layer is disposed over the cathode. The encapsulation layer has a first sidewall and a second sidewall.

Abstract: Touch screens with ultra-thin stack-ups can provide for a lower profile device, can improve the optical image on the display by reducing the display to cover glass distance, and can reduce the weight of the device. In some examples, the thickness of the touch screen stack-up can be reduced and/or the border region reduced, by removing the flex circuit connection from the stack-up. A flexible substrate can be used to enable routing of touch electrodes to touch circuitry. In some examples including a shield layer, the thickness of the touch screen stack-up can be reduced by routing the shield layer to a shield electrode on the touch sensor panel. The shield layer can then be routed to touch sensing circuitry via the flexible substrate. In some examples, the touch sensor panel or a portion of thereof can be integrated with the polarizer.

Abstract: The three-stage axial flow degassing device adopts an efficient degassing technology including a vertical high speed swirling field, a horizontal rapid axial flow field and a vertical reversing scrubbing field formed by a combination of vertical tubes; the first-stage degasser performs the first-stage segmental vertical high speed swirling degassing operation, removes the gas phase carried by the gas-containing fluid, and forms a primary gas and a primary fluid; the microporous uniform mixer breaks bubbles of the primary fluid and forms a gas-liquid uniform mixed flow; the second-stage degasser performs the second-stage horizontal vane wheel swirling generating rapid axial flow degassing operation, removes the gas phase carried by the gas-liquid uniform mixed flow, and forms a secondary gas and a secondary fluid; the third-stage degasser performs the third-stage vertical reversing deep degassing operation, removes liquid phase carried by the secondary gas, and forms a tertiary gas and a tertiary fluid.

Abstract: A three-stage tubular T-shaped degassing device with microbubble axial flow and spiral flow fields is provided, which is applied to quick degassing of a gas-liquid two-phase flow. The three-stage tubular T-shaped degassing device adopts a quick degassing technology combining a microbubble uniform mixed rotational axial flow field and a spiral runner conical spiral flow field with layered jet collision reversing depth degassing. A microbubble uniform mixer is configured to adjust gas-liquid two-phase flow containing big bubbles into microbubble uniform mixed axial flow. A microbubble cyclone is configured to adjust the microbubble uniform mixed axial flow into multiple strands of rotational axial flows containing microbubbles. A rotational axial flow degasser implements the horizontal type microbubble uniform mixed multiple strands rotational axial flow degassing operation to remove most microbubbles to form axial flow gas and axial flow liquid.

Abstract: The present disclosure relates to a device that includes a perovskite nanocrystal (NC) layer, a charge separating layer, an insulating layer, a gate electrode, a cathode, and an anode, where the charge separating layer is positioned between the perovskite NC layer and the insulating layer, the insulating layer is positioned between the charge separating layer and the gate electrode, and the cathode and the anode both electrically contact the charge separating layer and the insulating layer. In some embodiments of the present disclosure, the device may be configured to operate as at least one of a photodetector, an optical switching device, and/or a neuromorphic switching device.

Abstract: A light-emitting device according to the present invention comprises: a mounting board; a plurality of light-emitting elements that each include a supporting substrate and a semiconductor structure layer, the supporting substrate being disposed on the mounting board, and the semiconductor structure layer being formed on the supporting substrate and including a light-emitting layer, a wavelength conversion member that covers the plurality of light-emitting elements above the light-emitting elements and converts a wavelength of a light emitted from the light-emitting layer; a translucent member that covers a lower surface of the wavelength conversion member and covers the semiconductor structure layer on the supporting substrate; and a resin member filled between the plurality of light-emitting elements, the resin member being formed of a resin material containing particles having a light reflectivity.

Abstract: The present disclosure relates to a composition that includes a first layer having a first molecule that includes a metal and a halogen, a second layer that includes the first molecule, and a third layer that includes a chiral molecule, where the third layer is positioned between the first layer and the second layer, and the first layer, the second layer, and the third layer form a crystalline structure.

Abstract: A light-emitting device includes a substrate, a frame body, a light-emitting element, a wavelength converter, and a light reflecting portion. The light-emitting element includes a semiconductor light-emitting layer on a support substrate. The wavelength converter is disposed on an upper surface of the light-emitting element. The light reflecting portion covers side surfaces of the light-emitting element and the wavelength converter and is formed of a translucent resin containing light reflective particulate fillers. The light reflecting portion includes a first region extending along an upper surface of the light reflecting portion, a second region that is disposed under the first region and has a content rate of the particulate fillers lower than a content rate of the first region, and a third region that is disposed under the second region and has a content rate of the particulate fillers lower than the content rate of the second region.

Abstract: Provided is a light-emitting device having a plurality of light-emitting elements with high operation stability and light extraction efficiency. The light-emitting device includes: a light-emitting element; a translucent member which is disposed on the light-emitting element and has a columnar first portion having a bottom surface opposed to an upper surface of the light-emitting element, a second portion formed continuously with the first portion on the first portion and narrowed upward, and a columnar third portion formed continuously with the second portion on the second portion; and a reflective member configured to cover the side surfaces of the translucent member. In this light-emitting device, the height of the first portion of the translucent member in a direction perpendicular to the bottom surface thereof is ? or more the height of the translucent member in the direction perpendicular to the bottom surface.

Abstract: Electronic ratchet devices comprising a pair of first and second electrodes; a dielectric layer; a gate electrode layer; and a transport layer are disclosed herein.

Abstract: Ultrasensitive, miniaturized, and inexpensive ion and ionizing radiation detection devices are provided. The devices include an insulating substrate, metallic contact pads disposed on a surface of the substrate, and a strip of an ultrathin two-dimensional material having a thickness of one or a few atomic layers. The strip is in contact with the contact pads, and a voltage is applied across the two-dimensional sensor material. Individual ions contacting the two-dimensional material alter the current flowing through the material and are detected. The devices can be used in a network of monitors for high energy ions and ionizing radiation.

Abstract: The present disclosure relates to a device that includes a perovskite nanocrystal (NC) layer, a charge separating layer, an insulating layer, a gate electrode, a cathode, and an anode, where the charge separating layer is positioned between the perovskite NC layer and the insulating layer, the insulating layer is positioned between the charge separating layer and the gate electrode, and the cathode and the anode both electrically contact the charge separating layer and the insulating layer. In some embodiments of the present disclosure, the device may be configured to operate as at least one of a photodetector, an optical switching device, and/or a neuromorphic switching device.

Abstract: Ion-doped two-dimensional nanomaterials are made by inducing electronic carriers (electrons and holes) in a two-dimensional material using a captured ion layer at the surface of the material. The captured ion layer is stabilized using a capping layer. The induction of electronic carriers works in atomically-thin two-dimensional materials, where it induces high carrier density of at least 1014 carriers/cm2. A variety of novel ion-doped nanomaterials and p-n junction-based nanoelectronic devices are made possible by the method.

Abstract: Included is a semiconductor multilayer film in which a non-doped InAlN layer and a GaN layer formed on said InAlN layer and containing a dopant are stacked a plurality of times.

Abstract: A light-emitting device according to the present invention comprises: a mounting board; a plurality of light-emitting elements that each include a supporting substrate and a semiconductor structure layer, the supporting substrate being disposed on the mounting board, and the semiconductor structure layer being formed on the supporting substrate and including a light-emitting layer, a wavelength conversion member that covers the plurality of light-emitting elements above the light-emitting elements and converts a wavelength of a light emitted from the light-emitting layer; a translucent member that covers a lower surface of the wavelength conversion member and covers the semiconductor structure layer on the supporting substrate; and a resin member filled between the plurality of light-emitting elements, the resin member being formed of a resin material containing particles having a light reflectivity.

Abstract: Included is a semiconductor multilayer film in which a non-doped InAlN layer and a GaN layer formed on said InAlN layer and containing a dopant are stacked a plurality of times.

Abstract: A light-emitting element and a light-emitting device having low light loss, high luminance, and high light extraction efficiency are provided. The light-emitting element includes: a semiconductor structure layer having a light-emitting layer; a light-transmitting substrate provided on the semiconductor structure layer; a wavelength conversion layer disposed on the light-transmitting substrate; a light-transmitting covering member configured to cover at least a part of a side surface of the light-transmitting substrate and have transparency to light from the light-emitting layer; and a light-shielding member configured to entirely cover surfaces including a surface of the light-transmitting covering member, and including a side surface of the semiconductor structure layer, a side surface of the light-transmitting substrate, and a side surface of the wavelength conversion layer.

Abstract: Provided is a light-emitting device having a plurality of light-emitting elements with high operation stability and light extraction efficiency. The light-emitting device includes: a light-emitting element; a translucent member which is disposed on the light-emitting element and has a columnar first portion having a bottom surface opposed to an upper surface of the light-emitting element, a second portion formed continuously with the first portion on the first portion and narrowed upward, and a columnar third portion formed continuously with the second portion on the second portion; and a reflective member configured to cover the side surfaces of the translucent member. In this light-emitting device, the height of the first portion of the translucent member in a direction perpendicular to the bottom surface thereof is ? or more the height of the translucent member in the direction perpendicular to the bottom surface.

Abstract: A light-emitting device in which a light-emitting element and a substrate are reliably bonded to each other and which has high operation stability is provided. The light-emitting device includes the substrate, the light-emitting element disposed on the substrate with a bonding layer interposed therebetween, and a resin body configured to surround and cover entire side surfaces of the light-emitting element, and have a bottom surface having any of a curved surface shape and a planar surface shape that faces the substrate and is configured to be distant from the substrate between the resin body and the substrate as a distance from the side surface of the light-emitting element increases.

Abstract: Ion-doped two-dimensional nanomaterials are made by inducing electronic carriers (electrons and holes) in a two-dimensional material using a captured ion layer at the surface of the material. The captured ion layer is stabilized using a capping layer. The induction of electronic carriers works in atomically-thin two-dimensional materials, where it induces high carrier density of at least 1014 carriers/cm2. A variety of novel ion-doped nanomaterials and p-n junction-based nanoelectronic devices are made possible by the method.