Abstract: An adhesive sheet for temporary fixation which may have excellent heat resistance to exhibit a sufficient adhesive force even though it undergoes a high temperature process during a process of manufacturing a semiconductor device and may also exhibit a sufficient reduction of the adhesive force by photocuring during the step of peeling off, and a method of manufacturing a semiconductor device using the same, are provided.

Abstract: The present invention provides an adhesive composition that exhibits excellent adhesive force, and can be easily separated by photocuring during a peeling step, in which foaming and lifting are not generated even after a high temperature process.

Abstract: The present disclosure relates to an adhesive sheet for temporary attachment which is excellent in heat resistance and can realize sufficient adhesive strength even when being subjected to a high temperature process during the semiconductor production process, and can exhibit a sufficient reduction in adhesive strength due to photocuring in a peeling step, and a method for producing a semiconductor device using the same.

Abstract: The present invention relates to a dicing die-bonding film including: a substrate; an antistatic layer formed on the substrate and including an aliphatic or alicyclic polyurethane resin and a conductive filler; a cohesive layer formed on the antistatic layer; and an adhesive layer formed on the cohesive layer, and a dicing method of a semiconductor wafer using the dicing die-bonding film.

Abstract: The present invention relates to a method for measuring metal ion permeability of a polymer film, comprising the steps of: applying a voltage to the polymer film at a temperature of 5° C. to 250° C., while one side of the polymer film is brought into contact with an electrolyte comprising metal ions, an organic solvent and an aqueous solvent; and measuring the change rate of resistance or change rate of current of the polymer film according to time, after the voltage is applied, and a device for measuring metal ion permeability of a polymer film used therefor.

Abstract: The present invention relates to a method for measuring metal ion permeability of a polymer film, comprising the steps of applying a voltage to the polymer film, while at least one side of the polymer film is brought into contact with an electrolyte comprising metal ions, an organic solvent and an aqueous solvent; and measuring the change rate of resistance or change rate of current of the polymer film according to time, after the voltage is applied, and a device for measuring metal ion permeability of a polymer film used therefor.

Abstract: The present invention relates to a method for measuring metal ion permeability of a polymer film, comprising the steps of applying a voltage to the polymer film, while at least one side of the polymer film is brought into contact with an electrolyte comprising metal ions, an organic solvent and an aqueous solvent; and measuring the change rate of resistance or change rate of current of the polymer film according to time, after the voltage is applied, and a device for measuring metal ion permeability of a polymer film used therefor.

Abstract: The present invention relates to a method for measuring metal ion permeability of a polymer film, comprising the steps of: applying a voltage to the polymer film at a temperature of 5° C. to 250° C., while one side of the polymer film is brought into contact with an electrolyte comprising metal ions, an organic solvent and an aqueous solvent; and measuring the change rate of resistance or change rate of current of the polymer film according to time, after the voltage is applied, and a device for measuring metal ion permeability of a polymer film used therefor.