Abstract: In one example, an electronic device, comprises a first substrate comprising a first conductive structure, a second substrate comprising a second conductive structure, wherein the first substrate is over the second substrate, a first electronic component between the first substrate and the second substrate, a vertical interconnect between the first substrate and the second substrate, wherein the vertical interconnect is coupled with the first conductive structure and the second conductive structure, and an encapsulant between the first substrate and the second substrate and covering the vertical interconnect. A vertical port on the first electronic component is exposed by an aperture of the first substrate. Other examples and related methods are also disclosed herein.

Abstract: The simulation system for predicting heating and cooling loads of a building comprises the collection unit collecting measurement data of a target building from a BEMS, the identification unit identifying indoor and outdoor temperature, humidity, and insolation measured in the building in real time based on RTS method, the correlation derivation unit deriving a correlation between energy usage based on the BEMS measurement data collected by the collection unit and the cooling and heating loads according to indoor and outdoor temperature, humidity, and insolation identified by the identification unit, the simulation unit predicting a change in cooling and heating loads according to a change in at least one of pieces of measurement data based on the correlation derived from the correlation derivation unit to perform a simulation, and the information provision unit providing a simulation result from the simulation unit in a visible form to a user terminal.

Abstract: Heat exchanger comprising a pair of header tanks which are arranged to be spaced apart from each other, a plurality of tubes formed in two columns in the width direction so that both ends are connected to the pair of header tanks, and a plurality of fins interposed between the tubes and coupled to the tubes. The header tank is configured so that a first tank and a second tank are respectively coupled to one header having a central bent portion in the center portion in the width direction, which provides easy assembling of headers and tanks of two heat exchangers. Thermal stress caused by the temperature difference between two heat exchanging media is blocked so that damage to a coupling portion where the two heat exchangers are coupled or a bonding portion formed through brazing can be prevented. Thus, leakage of the heat exchanging medium can be prevented.

Abstract: Disclosure relates to an electrochemical lithium recovery system, and the electrochemical lithium recovery system is characterized by having a first flow electrode module that selectively extracts lithium ions from an object solution containing a waste battery active material by electrical attraction, and a second flow electrode module recovering the lithium ions extracted by the first flow electrode module, by the electric repulsive force. Accordingly, the electrochemical lithium recovery system does not require a high temperature treatment process, does not require a large amount of chemicals, and can ensure high recovery efficiency.

Abstract: An image sensor includes a substrate, a photoelectric conversion region in the substrate with the substrate defining a substrate trench on the photoelectric conversion region, a floating diffusion region adjacent to a side surface of the substrate trench, in the substrate, a gate dielectric film that extends along the side surface and a lower surface of the substrate trench and a transfer gate electrode which includes a lower gate that fills a portion of the substrate trench on the gate dielectric film and has a first width, and an upper gate that has a second width smaller than the first width on the lower gate. The gate dielectric film includes a lower dielectric film interposed between the substrate and the lower gate and has a first thickness, and an upper dielectric film adjacent to the floating diffusion region and has a second thickness greater than the first thickness.

Abstract: A flow-electrode cartridge unit and a submerged flow-electrode capacitive deionization device using the same are proposed. The flow-electrode cartridge unit includes a pair of porous current collector plates arranged to face each other in a spaced apart state from each other in a first direction, a pair of ion separation membranes positioned on respective outer surfaces of the porous current collector plates in the first direction, a channel frame for wrapping around the pair of porous current collector plates and the pair of ion separation membranes to expose each of the ion separation membranes in the first direction, thereby forming a flow electrode channel between the pair of porous current collector plates, a pair of communication holes formed in the channel frame and communicating the flow electrode channel to an outside, and an electrode terminal formed in the channel frame and electrically connected to the porous current collector plates.

Abstract: The present invention relates to an apparatus and a method for diagnosing a battery, and comprises: a power conversion unit for discharging and charging a battery; and a control unit for controlling the power conversion unit to discharge and charge the battery, and diagnosing power fade of the battery by calculating a maximum discharge output and a maximum charge output of the battery on the basis of a voltage and a current of the battery measured during discharging and charging of the battery.

Abstract: A transistor may include a semiconductor, a source electrode, a drain electrode, and a gate electrode. The semiconductor may include a first doped region, a second doped region, a source region, a drain region, and a channel region. The channel region is positioned between the source region and the drain region. The first doped region is positioned between the channel region and the source region. The second doped region is positioned between the channel region and the drain region. A doping concentration of the first doped region is lower than a doping concentration of the source region. A doping concentration of the second doped region is lower than a doping concentration of the drain region. The source electrode is electrically connected to the source region. The drain electrode is electrically connected to the drain region. The gate electrode overlaps the channel region.

Abstract: The present invention relates to an apparatus and a method for diagnosing a battery, and comprises: a power conversion unit for discharging and charging a battery; and a control unit for controlling the power conversion unit to discharge and charge the battery, and diagnosing power fade of the battery by calculating a maximum discharge output and a maximum charge output of the battery on the basis of a voltage and a current of the battery measured during discharging and charging of the battery.

Abstract: A transistor may include a semiconductor, a source electrode, a drain electrode, and a gate electrode. The semiconductor may include a first doped region, a second doped region, a source region, a drain region, and a channel region. The channel region is positioned between the source region and the drain region. The first doped region is positioned between the channel region and the source region. The second doped region is positioned between the channel region and the drain region. A doping concentration of the first doped region is lower than a doping concentration of the source region. A doping concentration of the second doped region is lower than a doping concentration of the drain region. The source electrode is electrically connected to the source region. The drain electrode is electrically connected to the drain region. The gate electrode overlaps the channel region.

Abstract: A transistor may include a semiconductor, a source electrode, a drain electrode, and a gate electrode. The semiconductor may include a first doped region, a second doped region, a source region, a drain region, and a channel region. The channel region is positioned between the source region and the drain region. The first doped region is positioned between the channel region and the source region. The second doped region is positioned between the channel region and the drain region. A doping concentration of the first doped region is lower than a doping concentration of the source region. A doping concentration of the second doped region is lower than a doping concentration of the drain region. The source electrode is electrically connected to the source region. The drain electrode is electrically connected to the drain region. The gate electrode overlaps the channel region.

Abstract: A thin film transistor array panel according to an exemplary embodiment of the present invention includes: a substrate; a gate electrode on the substrate; a gate insulating layer on the gate electrode; a semiconductor member including a channel region overlapping the gate electrode with the gate insulating layer interposed therebetween, and a source region and a drain region that face each other with the channel region interposed therebetween; an interlayer insulating layer on the semiconductor member; a data conductor on the interlayer insulating layer; and a passivation layer on the data conductor, wherein the interlayer insulating layer has a first hole on the channel region.

Abstract: A thin film transistor array panel according to an exemplary embodiment of the present invention includes: a substrate; a gate electrode on the substrate; a gate insulating layer on the gate electrode; a semiconductor member including a channel region overlapping the gate electrode with the gate insulating layer interposed therebetween, and a source region and a drain region that face each other with the channel region interposed therebetween; an interlayer insulating layer on the semiconductor member; a data conductor on the interlayer insulating layer; and a passivation layer on the data conductor, wherein the interlayer insulating layer has a first hole on the channel region.

Abstract: A thin film transistor array panel according to an exemplary embodiment of the present invention includes: a substrate; a gate electrode on the substrate; a gate insulating layer on the gate electrode; a semiconductor member including a channel region overlapping the gate electrode with the gate insulating layer interposed therebetween, and a source region and a drain region that face each other with the channel region interposed therebetween; an interlayer insulating layer on the semiconductor member; a data conductor on the interlayer insulating layer; and a passivation layer on the data conductor, wherein the interlayer insulating layer has a first hole on the channel region.

Abstract: A thin film transistor array panel includes: a substrate; a semiconductor layer disposed on the substrate; a gate electrode disposed on the semiconductor layer; and a source electrode and a drain electrode disposed on the semiconductor layer to not overlap the gate electrode, wherein a first edge of the gate electrode is aligned with a second edge of the semiconductor layer in a direction that is perpendicular to the substrate.

Abstract: A transistor may include a semiconductor, a source electrode, a drain electrode, and a gate electrode. The semiconductor may include a first doped region, a second doped region, a source region, a drain region, and a channel region. The channel region is positioned between the source region and the drain region. The first doped region is positioned between the channel region and the source region. The second doped region is positioned between the channel region and the drain region. A doping concentration of the first doped region is lower than a doping concentration of the source region. A doping concentration of the second doped region is lower than a doping concentration of the drain region. The source electrode is electrically connected to the source region. The drain electrode is electrically connected to the drain region. The gate electrode overlaps the channel region.

Abstract: A display device includes: a plurality of pixels, wherein each of the plurality of pixels includes at least two double-gate transistors including a first gate electrode and a second gate electrode; conduction between source electrodes and drain electrodes of the at least two double-gate transistors is controlled by a voltage applied to the first gate electrode, and electrical connection between the second gate electrode and the first gate electrode of each of the at least two double-gate transistors is determined depending on a polarity of a voltage applied on average to each of the at least two double-gate transistors.

Abstract: A thin film transistor array panel according to an exemplary embodiment of the present invention includes: a substrate; a gate electrode on the substrate; a gate insulating layer on the gate electrode; a semiconductor member including a channel region overlapping the gate electrode with the gate insulating layer interposed therebetween, and a source region and a drain region that face each other with the channel region interposed therebetween; an interlayer insulating layer on the semiconductor member; a data conductor on the interlayer insulating layer; and a passivation layer on the data conductor, wherein the interlayer insulating layer has a first hole on the channel region.

Abstract: A thin film transistor array panel includes: a substrate; a semiconductor layer disposed on the substrate; a gate electrode disposed on the semiconductor layer; and a source electrode and a drain electrode disposed on the semiconductor layer to not overlap the gate electrode, wherein a first edge of the gate electrode is aligned with a second edge of the semiconductor layer in a direction that is perpendicular to the substrate.

Abstract: A pixel circuit and a display device having the pixel circuit are disclosed. One inventive aspect includes a switching thin-film TFT and a light sensing TFT. The switching thin-film TFT includes a first source electrode electrically connected to a data line. A first gate electrode of the switching thin-film TFT and a second source electrode of the light sensing TFT are electrically connected to a first gate line. A first drain electrode of the switching thin-film TFT and a second drain electrode of the light sensing TFT are electrically connected to a pixel electrode.