Abstract: A semiconductor memory device comprising a peripheral circuit structure and a cell structure stacked on the peripheral circuit structure, wherein the cell structure includes a cell substrate including a first face facing the peripheral circuit structure and a second face opposite the first face, a first mold stack including a plurality of first gate electrodes sequentially stacked on the first face, and a channel hole extending through the plurality of first gate electrodes. A channel structure includes a gate dielectric film, a semiconductor film, and a variable resistance film sequentially stacked in the channel hole, wherein the semiconductor film includes a sidewall portion intersecting the first face and the plurality of first gate electrodes, and a top plate portion extending from the sidewall portion in the cell substrate in a parallel manner to the first face.

Abstract: The LED package comprising a substrate and a display device, stacked on the substrate, including a light emitting diode (LED), and so on. A light emitting diode (LED) package comprises a LED device configured to emit light, an electrostatic discharge (ESD) device including an ESD circuit formed under the LED device, a printed circuit board (PCB), including a power supply line, formed under the ESD device, and a heat sink substrate, formed under the PCB, configured to release a heat delivered from the LED device through the ESD device and PCB.

Abstract: The LED package comprising a substrate and a display device, stacked on the substrate, including a light emitting diode (LED), and so on. A light emitting diode (LED) package comprises a LED device configured to emit light, an electrostatic discharge (ESD) device including an ESD circuit formed under the LED device, a printed circuit board (PCB), including a power supply line, formed under the ESD device, and a heat sink substrate, formed under the PCB, configured to release a heat delivered from the LED device through the ESD device and PCB.