Abstract: A semiconductor device capable of improving a device performance and a reliability is provided. The semiconductor device comprising a gate structure including a gate electrode on a substrate, a source/drain pattern on a side face of the gate electrode, on the substrate and, a source/drain contact connected to the source/drain pattern, on the source/drain pattern, a gate contact connected to the gate electrode, on the gate electrode, and a wiring structure connected to the source/drain contact and the gate contact, on the source/drain contact and the gate contact, wherein the wiring structure includes a first via plug, a second via plug, and a wiring line connected to the first via plug and the second via plug, the first via plug has a single conductive film structure, and the second via plug includes a lower via filling film, and an upper via filling film on the lower via filling film.

Abstract: The present invention provides: a porous adhesive film which is formed from an adhesive composition including (meth)acrylic copolymers having hydroxyl groups and alkylene glycol groups, and which has a modulus of less than approximately 30 kPa at 25° C. and a peel strength of approximately 700 gf/in or greater at 25° C.; an optical member comprising same; and an optical display device comprising same.

Abstract: An adhesive film formed of an adhesive composition including a hydroxyl group-containing (meth)acrylic copolymer and a silicone-containing (meth)acrylic compound, the adhesive film having a peel strength ratio of about 50% or more, as calculated by Equation 1, an optical member including the same, and an optical display apparatus including the same are disclosed.

Abstract: An adhesive film, a scattering prevention film including the same, and an optical display apparatus including the same are provided. An adhesive film is formed of an adhesive composition including: a polymerization product including a hydroxyl group-containing (meth)acrylic copolymer; and an alkylene oxide cross-linking agent. The adhesive film contains a substituted monocyclic cyclyloxy group and has a peel strength of about 950 gf/in or more, as measured with respect to a glass plate at about 25° C.

Abstract: A semiconductor device includes a first lower line and a second lower line on a substrate, the first and second lower lines extending in a first direction, being adjacent to each other, and being spaced apart along a second direction, orthogonal the first direction, an airgap between the first and second lower lines and spaced therefrom along the second direction, a first insulating spacer on a side wall of the first lower line facing the second lower line, wherein a distance from the first airgap to the first lower line along the second direction is equal to or greater than an overlay specification of a design rule of the semiconductor device, and a second insulating spacer between the airgap and the second lower line.

Abstract: A semiconductor device includes a first lower line and a second lower line on a substrate, the first and second lower lines extending in a first direction, being adjacent to each other, and being spaced apart along a second direction, orthogonal the first direction, an airgap between the first and second lower lines and spaced therefrom along the second direction, a first insulating spacer on a side wall of the first lower line facing the second lower line, wherein a distance from the first airgap to the first lower line along the second direction is equal to or greater than an overlay specification of a design rule of the semiconductor device, and a second insulating spacer between the airgap and the second lower line.

Abstract: A method is provided for transmitting aperiodic channel state information (CSI). A base station (BS) transmits, to a user equipment (UE), receiving a downlink control information (DCI) which includes a CSI request field; and performing aperiodic CSI reporting using a Physical Uplink Shared Channel (PUSCH) when a value of the CSI request field triggers an aperiodic CSI report. In addition, when the CSI request field is a multi-bit field, the CSI request field has a value among a first value which triggers an aperiodic CSI report for a first reference signal and a second value which triggers an aperiodic CSI report for a second reference signal. Furthermore, a resource of the first reference signal and a resource of the second reference signal are configured by a higher layer signal.

Abstract: An adhesive film and a display member including the same are disclosed. The adhesive film is formed of an adhesive composition including: a copolymer of a monomer mixture including a hydroxyl group-containing (meth)acrylate and a comonomer; and nanoparticles. The adhesive film has a creep at ?20° C. of about 50 ?m to about 100 ?m and a gel fraction of about 50% to about 75%.

Abstract: An in-cell touch type display device includes a touch electrode that is in a display panel and arranged at each touch block, a sensing line that is connected to the touch electrode, and transfers a common voltage during a display period, and at least one dummy line that is connected to the touch electrode, and has a resistance less than that of the touch electrode.

Abstract: A semiconductor device and a method of forming the same, the semiconductor device including an insulating structure having an opening; a conductive pattern disposed in the opening; a barrier structure covering a bottom surface of the conductive pattern, the barrier structure extending between the conductive pattern and side walls of the opening; and a nucleation structure disposed between the conductive pattern and the barrier structure. The nucleation structure includes a first nucleation layer that contacts the barrier structure, and a second nucleation layer that contacts the conductive pattern, and a top end portion of the second nucleation layer is higher than a top end portion of the first nucleation layer.

Abstract: An adhesive film and a display member including the same are disclosed. The adhesive film is formed of an adhesive composition including: a copolymer of a monomer mixture including a hydroxyl group-containing (meth)acrylate and a comonomer; and nanoparticles. The adhesive film has a creep at ?20° C. of about 50 ?m to about 100 ?m and a gel fraction of about 50% to about 75%.

Abstract: Provided are an adhesive film, an optical member including the same, and an optical display device including the same, the adhesive film being formed from a monomer mixture comprising an alkyl group-containing acrylate and a hydroxyl group-containing acrylate, wherein the adhesive film has a modulus of 80 kPa or less at ?20° C., and the adhesive film has a value of 40% to 140% in equation 1 at 25° C.

Abstract: A semiconductor device and a method of forming the same, the semiconductor device including an insulating structure having an opening; a conductive pattern disposed in the opening; a barrier structure covering a bottom surface of the conductive pattern, the barrier structure extending between the conductive pattern and side walls of the opening; and a nucleation structure disposed between the conductive pattern and the barrier structure. The nucleation structure includes a first nucleation layer that contacts the barrier structure, and a second nucleation layer that contacts the conductive pattern, and a top end portion of the second nucleation layer is higher than a top end portion of the first nucleation layer.

Abstract: An adhesive film formed of an adhesive composition including a (meth)acrylic copolymer including an alkylene glycol group and a cyclic functional group while satisfying Equation 3 and Equation 4 herein, an optical member including the same, and an optical display including the same, are provided.

Abstract: A semiconductor device and a method of forming the same, the semiconductor device including an insulating structure having an opening; a conductive pattern disposed in the opening; a barrier structure covering a bottom surface of the conductive pattern, the barrier structure extending between the conductive pattern and side walls of the opening; and a nucleation structure disposed between the conductive pattern and the barrier structure. The nucleation structure includes a first nucleation layer that contacts the barrier structure, and a second nucleation layer that contacts the conductive pattern, and a top end portion of the second nucleation layer is higher than a top end portion of the first nucleation layer.

Abstract: An interference removal method in a multi-node system is provided. A user equipment (UE) receives node information from a base station, a first signal from a first node, and a second signal from a second node. The first signal and the second signal are used to remove an interference. The node information includes configuration information related to the first signal and the second signal. The configuration information includes information related to at least one of a number of antenna ports of the first node and the second node, a number of data streams, and a node identifier (ID). A pattern of the first signal or the second signal is determined according to at least one of the number of antenna ports of the first node and the second node, the number of data streams, and the node ID.

Abstract: Disclosed is a flexible display apparatus. The flexible display apparatus includes a display part, a first adhesive film, an optical film, a second adhesive film, and a window film sequentially stacked, and the second adhesive film has a water-vapor permeability of about 200 g/m2·24 hr or less, and the first adhesive film has a lower restoration force than the second adhesive film, as calculated by the Equation B set forth herein.

Abstract: A semiconductor device and a method of forming the same, the semiconductor device including an insulating structure having an opening; a conductive pattern disposed in the opening; a barrier structure covering a bottom surface of the conductive pattern, the barrier structure extending between the conductive pattern and side walls of the opening; and a nucleation structure disposed between the conductive pattern and the barrier structure. The nucleation structure includes a first nucleation layer that contacts the barrier structure, and a second nucleation layer that contacts the conductive pattern, and a top end portion of the second nucleation layer is higher than a top end portion of the first nucleation layer.

Abstract: A semiconductor device and a method of forming the same, the semiconductor device including an insulating structure having an opening; a conductive pattern disposed in the opening; a barrier structure covering a bottom surface of the conductive pattern, the barrier structure extending between the conductive pattern and side walls of the opening; and a nucleation structure disposed between the conductive pattern and the barrier structure. The nucleation structure includes a first nucleation layer that contacts the barrier structure, and a second nucleation layer that contacts the conductive pattern, and a top end portion of the second nucleation layer is higher than a top end portion of the first nucleation layer.

Abstract: According to one aspect of the present invention, values which are specifically defined for each user equipment are reflected when resource allocation/mapping of downlink/uplink ACK/NACK channels is performed, so as to vary uplink/downlink ACK/NACK information transmitting resources for each user equipment allocated to the same downlink/uplink resource. According to another aspect of the present invention, nodes for transmitting uplink/downlink ACK/NACK information vary for each user equipment allocated to the same downlink/uplink resource. According to the present invention, even when downlink/uplink signals for a plurality of user equipment are transmitted from the same resource, uplink/downlink ACK/NACK signals of the plurality of user equipment are transmitted from different resources, thereby reducing interferences among ACK/NACK signals of the plurality of user equipment.