Abstract: The present exemplary embodiments may provide soft magnetic powder including metal powder and an oxide insulation film coating a surface of metal powder particles, in which the metal powder particles may include one or more selected from pure iron or an iron-based alloy and the oxide insulation film may include an oxide of a component constituting the metal powder particles.

Abstract: Provided is a method for manufacturing a circuit board including: (a) preparing a mixture of a metal powder, an anti-sintering agent, and an activator; (b) immersing a dielectric substrate in the mixture; (c) forming a metal-containing layer on the surface of the dielectric substrate by heating the mixture under an inert atmosphere or under a reducing atmosphere; (d) forming a first metal layer on the metal-containing layer by electroless plating and forming a second metal layer thereon by electroplating; and (e) forming a metal pattern on the dielectric substrate, wherein the first metal layer includes Cu, Ni, Co, Au, Pd, or an alloy thereof, the second metal layer includes Cu, Ni, Fe, Co, Cr, Zn, Au, Ag, Pt, Pd, Rh, or an alloy thereof, and the method further includes performing heat treatment at least once after step (c).

Abstract: According to one aspect of the present invention, a non-metal member having a colored surface is provided. The non-metal member having a colored surface includes a non-metal substrate; a metal coating layer disposed on the non-metal substrate; a light-transmissive dielectric layer disposed on the metal coating layer; and a color pattern structure disposed on the light-transmissive dielectric layer.

Abstract: Provided is a high-durability coloring metal member. The high-durability coloring metal member includes a metal substrate, a dielectric layer provided on the metal substrate, and an oxynitride compound layer provided on the dielectric layer. The metal member is capable of expressing vivid and various colors with a color protection layer applied on the surface of the metal member.

Abstract: Provided is a coloring pattern structure. The coloring pattern structure includes: a substrate; a light-transmitting dielectric layer formed on at least one surface of the substrate; and a composite material layer disposed on an upper surface of the light-transmitting dielectric layer and formed of a metal and a first material not having a thermodynamic solid solubility in the metal, wherein the metal included in the composite material layer has a pattern coated only on portions of the upper surface of the light-transmitting dielectric layer, and the first material is coated on the remaining area where the metal is not coated.

Abstract: An image forming apparatus includes a print engine, a DC motor, a driving circuit, and a processor. The print engine forms an image. The DC motor drives the print engine. The driving circuit provides a current to the DC motor, and senses a variation of the current provided to the DC motor. The processor calculates a temperature of the DC motor based on the variation of the current flowing through the DC motor, and controls an operation of the image forming apparatus based on the calculated temperature.

Abstract: An image forming apparatus and an image forming method are provided. The image forming apparatus includes a printing engine to form an image, a step motor to drive the printing engine, a driving circuit to provide a constant current to the step motor and sense a voltage corresponding to a magnitude of the constant current provided to the step motor, and a processor to calculate a temperature of the step motor based on the voltage sensed by the driving circuit during an excitation period of the step motor and control an operation of the image forming apparatus based on the calculated temperature.

Abstract: A photoelectronic device includes a substrate; a first electrode and a second electrode disposed on the substrate and spaced apart from each other in a first direction; and a transition metal dichalcogenide thin film including at least one first region and at least one second region. Each first region includes M+N transition metal dichalcogenide molecular layers and extends along the first direction. Each second region includes N transition metal dichalcogenide molecular layers extending from lower N transition metal dichalcogenide molecular layers of the first region. Each second region extends along the first direction and is adjacent to each first region. Both end regions in the first direction among the first and the second regions are electrically connected to the first electrode and the second electrode, respectively.

Abstract: Provided is a method for manufacturing a circuit board including: (a) preparing a mixture of a metal powder, an anti-sintering agent, and an activator; (b) immersing a dielectric substrate in the mixture; (c) forming a metal-containing layer on the surface of the dielectric substrate by heating the mixture under an inert atmosphere or under a reducing atmosphere; (d) forming a first metal layer on the metal-containing layer by electroless plating and forming a second metal layer thereon by electroplating; and (e) forming a metal pattern on the dielectric substrate, wherein the first metal layer includes Cu, Ni, Co, Au, Pd, or an alloy thereof, the second metal layer includes Cu, Ni, Fe, Co, Cr, Zn, Au, Ag, Pt, Pd, Rh, or an alloy thereof, and the method further includes performing heat treatment at least once after step (c).

Abstract: An example operating method of an image forming apparatus includes detecting a position change of a beam with respect to a certain color in a main scanning direction, based on a change in a detection time at which the beam with respect to the certain color is detected by a beam detecting apparatus in the main scanning direction, detecting a position change of the beam with In respect to the certain color in a sub-scanning direction, based on a change in a detection time at which the beam with respect to the certain color is detected by the beam detecting apparatus in the sub-scanning direction, and correcting a value of at least one parameter used for alignment between an image of a reference color and an image of the certain color, based on the position changes of the beam in the main scanning direction and the sub-scanning direction.

Abstract: A method of manufacturing a honeycomb metal structure includes providing a substrate comprising iron (Fe) and a container containing water; coating at least a part of the substrate with a viscid material whose viscidity is increased by moisture; attaching metal powder onto the viscid material; adhering the metal powder to the substrate due to an increase in viscidity of the viscid material by evaporating a portion of the water in the container and supplying moisture to the viscid material; and generating an uneven structure made of the metal powder bonded to the substrate by performing a heat treatment on the substrate to which the metal powder is adhered. The heat treatment may include performing a first heat treatment on the substrate to generate an intermetallic layer at an interface between the substrate and the metal powder; and performing a second heat treatment to dissolve the intermetallic compound layer.

Abstract: A plasma source device includes a pair of divided electrodes including a first divided electrode and a second divided electrode spaced apart from each other and electrically coupled to each other; and a ferrite structure comprising a portion interposed the first divided electrode and the second divided electrode.

Abstract: An image forming apparatus and an image forming method are provided. The image forming apparatus includes a printing engine to form an image, a step motor to drive the printing engine, a driving circuit to provide a constant current to the step motor and sense a voltage corresponding to a magnitude of the constant current provided to the step motor, and a processor to calculate a temperature of the step motor based on the voltage sensed by the driving circuit during an excitation period of the step motor and control an operation of the image forming apparatus based on the calculated temperature.

Abstract: According to one aspect of the present invention, a non-metal member having a colored surface is provided. The non-metal member having a colored surface includes a non-metal substrate; a metal coating layer disposed on the non-metal substrate; a light-transmissive dielectric layer disposed on the metal coating layer; and a color pattern structure disposed on the light-transmissive dielectric layer.

Abstract: The present disclosure relates to a semiconductor device and a photoelectronic device, both including a transition-metal dichalcogenide thin-film, and to a method for producing a transition-metal dichalcogenide thin-film. The transition-metal dichalcogenide thin-film includes: a first region including a stack of N+M transition-metal dichalcogenide molecular layers; and a second region including a stack of N transition-metal dichalcogenide molecular layers, wherein the second region is horizontally adjacent to the first region, wherein the N transition-metal dichalcogenide molecular layers of the second region respectively horizontally extend from the N transition-metal dichalcogenide molecular layers of the first region.

Abstract: Provided is a coloring pattern structure. The coloring pattern structure includes: a substrate; a light-transmitting dielectric layer formed on at least one surface of the substrate; and a composite material layer disposed on an upper surface of the light-transmitting dielectric layer and formed of a metal and a first material not having a thermodynamic solid solubility in the metal, wherein the metal included in the composite material layer has a pattern coated only on portions of the upper surface of the light-transmitting dielectric layer, and the first material is coated on the remaining area where the metal is not coated.

Abstract: A photoelectronic device includes a substrate; a first electrode and a second electrode disposed on the substrate and spaced apart from each other in a first direction; and a transition metal dichalcogenide thin film including at least one first region and at least one second region. Each first region includes M+N transition metal dichalcogenide molecular layers and extends along the first direction. Each second region includes N transition metal dichalcogenide molecular layers extending from lower N transition metal dichalcogenide molecular layers of the first region. Each second region extends along the first direction and is adjacent to each first region. Both end regions in the first direction among the first and the second regions are electrically connected to the first electrode and the second electrode, respectively.

Abstract: The present disclosure relates to a semiconductor device and a photoelectronic device, both including a transition-metal dichalcogenide thin-film, and to a method for producing a transition-metal dichalcogenide thin-film. The transition-metal dichalcogenide thin-film includes: a first region including a stack of N+M transition-metal dichalcogenide molecular layers; and a second region including a stack of N transition-metal dichalcogenide molecular layers, wherein the second region is horizontally adjacent to the first region, wherein the N transition-metal dichalcogenide molecular layers of the second region respectively horizontally extend from the N transition-metal dichalcogenide molecular layers of the first region.

Abstract: The present disclosure relates to a semiconductor device and a photoelectronic device, both including a transition-metal dichalcogenide thin-film, and to a method for producing a transition-metal dichalcogenide thin-film. The transition-metal dichalcogenide thin-film includes: a first region including a stack of N+M transition-metal dichalcogenide molecular layers; and a second region including a stack of N transition-metal dichalcogenide molecular layers, wherein the second region is horizontally adjacent to the first region, wherein the N transition-metal dichalcogenide molecular layers of the second region respectively horizontally extend from the N transition-metal dichalcogenide molecular layers of the first region.

Abstract: The present invention relates to a biodegradable magnesium alloy comprising x wt % of calcium, y wt % of zinc, and the balance of magnesium and inevitable impurities, wherein x and y have a range corresponding to a region in which the lower part of the trajectory of mathematical formula 1 (y=44.894x2?25.123x+5.192) and the upper part of the trajectory of mathematical formula 2 (y=?10.618x2+7.8784x+0.1637) overlap in the x-y plane, and a zinc compound phase contains 90 wt % or more of Ca2Mg6Zn3 on the basis of the total weight of the zinc compound phase.