Abstract: To manufacture an integrated circuit (IC) device, a structure in which a first material film including silicon atoms and nitrogen atoms and a second material film devoid of nitrogen atoms is formed on a substrate. A carbonyl compound having a functional group without an ?-hydrogen is applied to the structure, and thus, an inhibitor is selectively formed only on an exposed surface of the first material film from among the first material film and the second material film.

Abstract: A method of manufacturing a semiconductor device includes providing a metal precursor on a substrate, and providing a reactant and a co-reactant to form a metal nitride layer by reaction with the metal precursor, the reactant being a nitrogen source, the co-reactant being an organometallic compound represented by Chemical Formula 1: M2?L1)n??[Chemical Formula 1] In Chemical Formula 1, M2 may be selected from Sn, In, and Ge, n may be 2, 3, or 4, and each L1 may independently be hydrogen, a halogen, or a group represented by Chemical Formula 2. In Chemical Formula 2, x may be 0, 1, 2, 3, 4, or 5 and y may be 0 or 1. When x is 0, y may be 1. R1, R2, R3, and R4 may each independently be hydrogen, an alkyl group having 1 to 5 carbons, or an aminoalkyl group having 1 to 5 carbons.