Abstract: An electronic device including a substrate, a sensor, a partition wall structure, a pressurizing component, and a stopping structure is provided. The substrate has a carrying surface. The sensor is disposed on the carrying surface. The partition wall structure is disposed on the carrying surface and surrounds the sensor. The pressurizing component is disposed on the partition wall structure. The pressurizing component, the partition wall structure, and the substrate jointly form a cavity, and the pressurizing component includes a mass and a vibration membrane. The stopping structure is disposed between the pressurizing component and the partition wall structure and extends into the cavity. The stopping structure has at least one opening penetrating the stopping structure.

Abstract: Intelligent process management is provided. A start time is determined for an additional process to be run on a worker node within a duration of a sleep state of a task of a process already running on the worker node by adding a first defined buffer time to a determined start time of the sleep state of the task. A backfill time is determined for the additional process by subtracting a second defined buffer time from a determined end time of the sleep state of the task. A scheduling plan is generated for the additional process based on the start time and the backfill time corresponding to the additional process. The scheduling plan is executed to run the additional process on the worker node according to the start time and the backfill time corresponding to the additional process.

Abstract: The method for manufacturing the semiconductor structure includes: providing a substrate, and forming contact holes in the substrate; depositing a metal at a bottom of each contact hole, and performing a reverse sputtering treatment to form a metal layer; in the reverse sputtering treatment, metal atoms or metal ions are sputtered onto at least a part of a side wall of each contact hole; performing a annealing treatment, to cause the substrate reacts with the metal layer to form a metal silicide layer.

Abstract: A method for enriching niobium and titanium in a mineral containing iron, niobium, and titanium, includes: reacting raw materials comprising 1 part by weight of a mineral containing iron, niobium, and titanium, 0.1-0.8 part by weight of a nickel-containing substance and 0.2-1 part by weight of carbon at 800-1500° C. to obtain a nickel-iron alloy and a niobium-titanium rich slag, where an amount of the mineral containing iron, niobium, and titanium is counted in terms of iron element, and an amount of the nickel-containing substance is counted in terms of nickel element. The nickel-containing substance is one or more selected from the group consisting of oxides of nickel and nickel minerals.

Abstract: Method for determining volatile thio-ether compounds in offensive odorous sediment including: pre-treating a sediment sample, extracting volatile thio-ether compounds, separating and purifying the extraction supernatant in a solid phase extraction column, eluting with ethyl acetate, and finally collecting the eluent, which is then concentrated and used for determination by gas chromatography.

Abstract: Method for determining volatile thio-ether compounds in offensive odorous sediment including: pre-treating a sediment sample, extracting volatile thio-ether compounds, separating and purifying the extraction supernatant in a solid phase extraction column, eluting with ethyl acetate, and finally collecting the eluent, which is then concentrated and used for determination by gas chromatography.

Abstract: The invention mainly discloses a pharmaceutical composition for use in the treatment of hepatocellular carcinoma, which comprises thalidomide and a pharmaceutically acceptable carrier.