Abstract: The cleaning base station includes a base, and an air supply device. The base is provided with a docking position for docking the cleaning robot and a working groove with a top opening. The mopping member of the cleaning robot is located above the working groove when the cleaning robot is docked at the docking position. The air supply device is arranged on the base. An output end of the air supply device is connected to at least one air outlet arranged in the working groove. The airflow is sent into the working groove from at least one direction and is conveyed to the top opening of the working groove to blow to the mopping member.

Abstract: The present invention discloses a method of preparing oligosaccharide using biomass sugar as raw material. The method places a biomass sugar in a quartz tubular reactor, places the quartz tubular reactor at a temperature-controlled zone of a tubular thermal conversion reactor under the protection of nitrogen gas, controls a thermal conversion time, rapidly quenches a material to obtain an oligosaccharide precursor after thermal conversion ends, then dissolves by adding pure water and purifies through an inorganic ultrafiltration membrane, and finally obtain an oligosaccharide after drying.

Abstract: The present invention discloses a method of preparing oligosaccharide using biomass sugar as raw material. The method places a biomass sugar in a quartz tubular reactor, places the quartz tubular reactor at a temperature-controlled zone of a tubular thermal conversion reactor under the protection of nitrogen gas, controls a thermal conversion time, rapidly quenches a material to obtain an oligosaccharide precursor after thermal conversion ends, then dissolves by adding pure water and purifies through an inorganic ultrafiltration membrane, and finally obtain an oligosaccharide after drying.

Abstract: The present invention generally relates to a structure and manufacturing of a power field effect transistor (FET). The present invention provides a planar power metal oxide semiconductor field effect transistor (MOSFET) structure and an insulated gate bipolar transistor (IGBT) structure comprising a split gate and a semi-insulating field plate. The present invention also provides manufacturing methods of the structures.

Abstract: The present invention generally relates to a structure and manufacturing of a power field effect transistor (FET). The present invention provides a planar power metal oxide semiconductor field effect transistor (MOSFET) structure and an insulated gate bipolar transistor (IGBT) structure comprising a split gate and a semi-insulating field plate. The present invention also provides manufacturing methods of the structures.

Abstract: The present invention generally relates to a structure and manufacturing of a power field effect transistor (FET). The present invention provides a planar power metal oxide semiconductor field effect transistor (MOSFET) structure and an insulated gate bipolar transistor (IGBT) structure comprising a split gate and a semi-insulating field plate. The present invention also provides manufacturing methods of the structures.

Abstract: The present invention generally relates to a structure and manufacturing of a power field effect transistor (FET). The present invention provides a planar power metal oxide semiconductor field effect transistor (MOSFET) structure and an insulated gate bipolar transistor (IGBT) structure comprising a split gate and a semi-insulating field plate. The present invention also provides manufacturing methods of the structures.