Abstract: A method for preparing a rare earth anisotropic bonded magnetic powder, comprises the following steps: (1) preparing raw powder with RTBH as the main component, wherein, R is Nd or Pr/Nd, and T is a transition metal containing Fe; (2) adding La hydride or Ce hydride and copper powder to the raw powder to form a mixture; (3) subjecting the mixture to atmosphere diffusion heat treatment to give the rare earth anisotropic bonded magnetic powder.

Abstract: The invention discloses a composite rare earth anisotropic bonded magnet and a preparation method thereof. The composite rare earth anisotropic bonded magnet comprises a Nd—Fe—B magnetic powder, a Sm—Fe—N magnetic powder, a binder and an inorganic nano-dispersant. The preparation method comprises steps of preparing a Nd—Fe—B magnetic powder by a HDDR method, preparing a Sm—Fe—N magnetic powder by a powder metallurgy method, mixing the Nd—Fe—B magnetic powder, the Sm—Fe—N magnetic powder, the binder and the inorganic nano-dispersant at a specific ratio to finally obtain the composite rare earth anisotropic bonded magnet. The invention, by adding an inorganic nano-dispersant, enables the full dispersion of the fine Sm—Fe—N powder during the mixing process of the binder, the Nd—Fe—B magnetic powder and the Sm—Fe—N powder, and thus makes the fine Sm—Fe—N powder and the binder evenly coated on the surface of the anisotropic Nd—Fe—B magnetic powder.

Abstract: In the method, an access point AP receives action information separately reported by N stations STAs, where N pieces of action information are used to determine a training result of a first neural network of each STA, and N is a positive integer. The AP determines the training result of the first neural network of each STA based on the N pieces of action information, and sends the training result of the first neural network of each STA to the corresponding STA. The training result of the first neural network of each STA is determined based on the action information reported by the N STAs, instead of only the action information of the STA. This can improve a prediction capability of the first neural network, help improve a capability of each STA to predict channel access behavior of another STA, and improve a system throughput and reduce a communication latency.

Abstract: A method, circuit, audio playback device, and system of sending and receiving Bluetooth packet loss data is disclosed. The method includes: step S100, receiving a forwarding request sent by a second audio playback device in a receiving state; step S200, monitoring the retransmission information of an audio source device retransmitting current audio data on Link 1 according to the forwarding request; step S300, determining whether the retransmission information is monitored; step S400, switching from the receiving state to a sending state; and step S500, forwarding the current audio data to the second audio playback device through Link 2 in accordance with the time sequence of the audio source device retransmitting the current audio data. The signal can be provided to the second audio playback device from different locations.

Abstract: A system to improve a product based on a relaxation response includes a memory configured to store relaxation response data of a sample. The relaxation response data includes time data and amplitude data. A processor is operatively coupled to the memory and configured to convert the relaxation response data to linear-amplitude versus log-time data. The processor also performs a least-squares fit of the converted relaxation response data to a heavy-tail function to determine one or more fit parameter values. The processor also updates a design for the sample based at least in part on the one or more fit parameter values.

Abstract: The present disclosure relates to a channel access method and a channel access apparatus. In an example method, a first node obtains network status information in a target period. The network status information includes a first time segment and a second time segment. The first node inputs the network status information into a target neural network, to obtain a first prediction value and a second prediction value. The first node sends a to-be-sent packet to a second node through the shared channel in response to determining that the first prediction value is greater than the second prediction value.

Abstract: The present disclosure discloses a power device including at least one vacuum packaged unit structure. The unit structure comprises a silicon substrate (100) and an emitter (200), a light modulator (300) and a collector (400) formed on the silicon substrate (100). On the one hand, the unified silicon-based process is compatible with the existing commercial process, so that it is easy for integration, simple for manufacture, and low in cost; on the other hand, the light modulator (300) is introduced and formed on the silicon substrate by a silicon-based process, which enhances field emission efficiency of the emitter (200), offsets the inconsistency of distances between the tips of the emitters (200) and the collector (400) caused by unevenness of the emitters, and increases the process redundancy of the cold cathode emitter.

Abstract: This present disclosure provides a controlling method for an actuator (104), an actuator (104), and an electromechanical brake system of brake technology. The controlling method comprises: receiving a brake demand; controlling an electric motor (108) based on the brake demand; if the brake demand satisfies a preset stationary condition within a preset period, controlling a brake force holding device (108) to lock a shaft. In this way, frequent variations of the brake demand caused by interference from ambient disturbance or the driver's unsteady brake instructions may be prevented so that the actuator can be locked timely, thereby maintaining a continuous brake torque output with low power consumption or zero power consumption to provide a continuous brake force to the vehicle.

Abstract: The present invention discloses a multi-element perovskite material, and a single crystal, powder and a film thereof, as well as the applications thereof in photoluminescence and electroluminescence, in which the multi-element perovskite material is a multi-element fully-inorganic salt of non-lead metal halide and has a perovskite structure; and the chemical formula of the multi-element perovskite material is Cs2NaxAg1-xInyBi1-yCl6, wherein 0?x?1, 0?y?1. Meanwhile, based on the very strong self-trapped exciton states of the double perovskite, the present invention proposes a high-efficiency single-phase broadband phosphor and an electroluminescent device.

Abstract: The present invention discloses a multi-element perovskite material, and a single crystal, powder and a film thereof, as well as the applications thereof in photoluminescence and electroluminescence, in which the multi-element perovskite material is a multi-element fully-inorganic salt of non-lead metal halide and has a perovskite structure; and the chemical formula of the multi-element perovskite material is Cs2NaxAg1-xInyBi1-yCl6, wherein 0?x?1, 0?y?1. Meanwhile, based on the very strong self-trapped excitors states of the double perovskite, the present invention proposes a high-efficiency single-phase broadband phosphor and an electroluminescent device.

Abstract: Systems and methods can provide a fast and accurate way to measure conductivity and Hall effect, such that transient conductivities, transient carrier densities or transient mobilities can be measured on millisecond time scales, for example. The systems and methods can also reduce the minimum magnetic field needed to extract carrier density or mobility of a given sample, and reduce the minimum mobility that can be measured with a given magnetic field.

Abstract: The present invention discloses a semiconductor radiation detector based on Bi-based quaternary halide single crystal and a manufacturing method, and relates to the technical field of ray imaging detector manufactured by a semiconductor material. The semiconductor radiation detector in this example includes: a light absorption layer made of Bi-based quaternary halide single crystal; an electron selective contact layer and a hole selective contact layer respectively provided on upper and lower sides of the light absorption layer; and two electrodes which are respectively in contact with the two charge selective contact layers and used as positive and negative electrodes of the device. The semiconductor radiation detector in the present invention has advantages such as high sensitivity, good stability and environmental friendliness.

Abstract: The invention discloses an STI stress effect modeling method and device of an MOS device, and belongs to the technical field of parameter extraction modeling of devices. The method comprises the following steps: introducing the influence of temperature parameters on the STI stress effect of the MOS device, so as to form a function showing that the STI stress effect of the MOS device changes along with the temperature parameters; extracting the model parameter Model1 of the MOS device at normal temperature; on the basis of the Model1, extracting the parameter Model2 that the STI stress affects the properties of the MOS device at normal temperature; and on the basis of the Model2, extracting fitting parameters of the MOS device in the function so as to acquire final model parameters. The device comprises a first module, a second module, a third module and a fourth module.

Abstract: Systems and methods can provide a fast and accurate way to measure conductivity and Hall effect, such that transient conductivities, transient carrier densities or transient mobilities can be measured on millisecond time scales, for example. The systems and methods can also reduce the minimum magnetic field needed to extract carrier density or mobility of a given sample, and reduce the minimum mobility that can be measured with a given magnetic field.

Abstract: The present invention provides a SOI MOS device modeling method. The SOI MOS device is one having a source-drain injection not reaching the bottom. The method comprises: a) establishing an overall model comprising a primary MOS device model simulating an SOI MOS device having the source-drain injection reaching the bottom, a source body PN junction bottom capacitance model simulating a source body PN junction bottom capacitance, and a drain body PN junction bottom capacitance model simulating a drain body PN junction bottom capacitance; and b) extracting parameters respectively for the primary MOS device model, the source body PN junction bottom capacitance model, and the drain body PN junction bottom capacitance model in the overall model. In the prior art, the source body junction bottom capacitance and the drain body junction bottom capacitance in the SOI MOS device having a source-drain injection not reaching the bottom affect the performances of the device.

Abstract: The invention discloses an STI stress effect modeling method and device of an MOS device, and belongs to the technical field of parameter extraction modeling of devices. The method comprises the following steps: introducing the influence of temperature parameters on the STI stress effect of the MOS device, so as to form a function showing that the STI stress effect of the MOS device changes along with the temperature parameters; extracting the model parameter Model1 of the MOS device at normal temperature; on the basis of the Model1, extracting the parameter Model2 that the STI stress affects the properties of the MOS device at normal temperature; and on the basis of the Model2, extracting fitting parameters of the MOS device in the function so as to acquire final model parameters. The device comprises a first module, a second module, a third module and a fourth module.

Abstract: A method for improving anti-radiation performance of SOI structure that includes implementing particle implantations of high-energy neutrons, protons and ?-rays to a buried oxide layer of an SOI structure, and then performing annealing process. The high-energy particle implantation introduces displacement damage to the buried oxide layer of the SOI structure.

Abstract: The present invention provides a method for determining PN junction depth comprising: a) measuring a square resistance in a well region; b) forming a junction type field effect transistor in the well region, changing a gate electrode voltage and measuring a source-drain resistance; c) calculating the PN junction depth according to the measured square resistance, source-drain resistance and related process parameters of the junction type field effect transistor. As compared with the prior art, the technical solution in this invention determines the PN junction depth by electrical measurement, is thus simple and feasible, and has better repeatability.

Abstract: The present invention provides a SOI MOS device modeling method. The SOI MOS device is one having a source-drain injection not reaching the bottom. The method comprises: a) establishing an overall model comprising a primary MOS device model simulating an SOI MOS device having the source-drain injection reaching the bottom, a source body PN junction bottom capacitance model simulating a source body PN junction bottom capacitance, and a drain body PN junction bottom capacitance model simulating a drain body PN junction bottom capacitance; and b) extracting parameters respectively for the primary MOS device model, the source body PN junction bottom capacitance model, and the drain body PN junction bottom capacitance model in the overall model. In the prior art, the source body junction bottom capacitance and the drain body junction bottom capacitance in the SOI MOS device having a source-drain injection not reaching the bottom affect the performances of the device.

Abstract: The present invention provides a method for manufacturing a semiconductor structure, which is characterized in comprising following steps: providing an SOI substrate for forming a semiconductor structure; the SOI substrate comprises a monocrystalline silicon top layer, a buried oxide layer and a support substrate; and forming an amorphous region outside the area for forming a channel region of the semiconductor structure in the monocrystalline silicon top layer. The method provided by the present invention can effectively improve reliability of a gate dielectric layer formed on the SOI substrate.