Abstract: The invention relates mainly to a starter for a heat engine of a motor vehicle comprising: at least one electromagnetic contactor comprising a positive output terminal, at least one electric motor, the electric motor comprising: at least one brush cage (43), at least one positive brush (35) mounted in the brush cage (43), an electrical path (91) between the positive brush (35) and the positive output terminal (32), and at least one thermal protection (96) situated in the electrical path (91), in which the thermal protection is suitable for disconnecting the two elements (93, 95) when the thermal protection has a temperature above a temperature threshold to electrically disconnect the positive output terminal relative to the positive brush (35).

Abstract: The invention relates mainly to a starter for a heat engine of a motor vehicle comprising: at least one electromagnetic contactor comprising a positive output terminal, at least one electric motor, the electric motor comprising: at least one brush cage (43), at least one positive brush (35) mounted in the brush cage (43), an electrical path (91) between the positive brush (35) and the positive output terminal (32), and at least one thermal protection (96) situated in the electrical path (91), in which the thermal protection is suitable for disconnecting the two elements (93, 95) when the thermal protection has a temperature above a temperature threshold to electrically disconnect the positive output terminal relative to the positive brush (35).

Abstract: A replacement gate structure that includes a conductive metal gate electrode is formed in a gate cavity, wherein the gate cavity is formed in a dielectric material formed above an active region of a semiconductor device. An upper surface of the conductive metal gate electrode and an upper surface of the dielectric material are planarized during a common planarization process, and a protective conductive cap is selectively formed on and in direct physical contact with the planarized upper surface of the conductive metal gate electrode. A contact structure is formed in a dielectric insulating layer formed above the replacement gate structure, the contact structure directly contacting the protective conductive cap.

Abstract: A replacement gate structure that includes a conductive metal gate electrode is formed in a gate cavity, wherein the gate cavity is formed in a dielectric material formed above an active region of a semiconductor device. An upper surface of the conductive metal gate electrode and an upper surface of the dielectric material are planarized during a common planarization process, and a protective conductive cap is selectively formed on and in direct physical contact with the planarized upper surface of the conductive metal gate electrode. A contact structure is formed in a dielectric insulating layer formed above the replacement gate structure, the contact structure directly contacting the protective conductive cap.