Abstract: The disclosure relates to KRASG12D inhibitor compounds having the structure of Formula (A) or Formula (B), pharmaceutical compositions thereof, and methods of use thereof for inhibiting, treating, and/or preventing KRASG12D mutation-associated diseases, disorders and conditions.

Abstract: Disclosed herein is a process of forming an inorganic water barrier layer on top of a porous substrate by means of microbially induced calcium carbonate or calcite precipitation (MICP), the process comprising the steps of: providing a porous substrate having a surface; depositing a urease-active slurry onto the surface of the porous substrate to form a bioslurry layer; and subjecting the bioslurry layer to one or more treatments with an aqueous solution comprising urea and a water barrier source material to convert the bioslurry layer into an inorganic water barrier layer. The process further comprises a step of covering the bioslurry layer with a layer of a porous material that has a surface, where the one or more treatments with an aqueous solution comprising urea and a water barrier source material are initially applied to the surface of the porous material.

Abstract: Disclosed herein is a process of forming an inorganic water barrier layer on top of a porous substrate by means of microbially induced calcium carbonate or calcite precipitation (MICP), the process comprising the steps of: providing a porous substrate having a surface; depositing a urease-active slurry onto the surface of the porous substrate to form a bioslurry layer; and subjecting the bioslurry layer to one or more treatments with an aqueous solution comprising urea and a water barrier source material to convert the bioslurry layer into an inorganic water barrier layer. The process further comprises a step of covering the bioslurry layer with a layer of a porous material that has a surface, where the one or more treatments with an aqueous solution comprising urea and a water barrier source material are initially applied to the surface of the porous material.

Abstract: A resistive random access memory includes a first electrode, a separating medium, a resistance changing layer and a second electrode. The first electrode has a mounting face. The separating medium has a first face in contact with the mounting face, a second face opposite to the first face, and an inner face extending between the first and second faces. The separating medium forms a through hole extending from the first to second face. A part of the mounting face is not covered by the separating medium. The separating medium has a first dielectric. The resistance changing layer extends along the part of the mounting face as well as the inner and second faces. The resistance changing layer has a second dielectric having a dielectric constant larger than a dielectric constant of the first dielectric by 2 or less. The second electrode is arranged on the resistance changing layer.

Abstract: A resistive random access memory is provided to solve the problem of low switching speed of the conventional resistive random access memory. The resistive random access memory may include a thermally conductive layer, a first electrode layer, a heat preserving element, a resistance changing layer and a second electrode layer. The first electrode layer is arranged on the thermally conductive layer. The heat preserving element is arranged on the first electrode layer and forms a through-hole. A part of a surface of the first electrode layer is exposed to the through-hole. The resistance changing layer extends from the part of the surface of the first electrode layer to a surface of the heat preserving element that is located outside the through-hole. The second electrode layer is arranged on the resistance changing layer.

Abstract: A resistive random access memory including a first electrode, a separating medium, a resistance changing layer and a second electrode is disclosed. The first electrode has a mounting face. The separating medium is arranged on the first electrode and forms a through hole. A part of the first electrode is not covered by the separating medium. The separating medium has a first dielectric. The resistance changing layer extends along the part of the first electrode as well as along an inner face and the second face of the separating medium. The resistance changing layer has a second dielectric having a dielectric constant larger than a dielectric constant of the first dielectric by 2 or less. The second electrode is arranged on the resistance changing layer. In this arrangement, the problem of unstable forming voltage of the conventional resistive random access memory can be solved.

Abstract: A method for producing a resistive random access memory includes preparing a first metal layer and sputtering a resistive switching layer on the first metal layer. Surface treatment is conducted on the resistive switching layer by using a plasma containing mobile ions to dope the mobile ions into the resistive switching layer. The polarity of the mobile ions is opposite to the polarity of oxygen ions. Then, a second metal layer is sputtered on the resistive switching layer.

Abstract: A resistive random access memory overcomes the difficulty in reducing the forming voltage thereof. The resistive random access memory includes a first electrode layer, a separating portion, a lateral wall portion, an oxygen-containing rheostatic layer and a second electrode layer. The separating portion is arranged on the first electrode layer and forms a through-hole. The first electrode layer is exposed via the through-hole. The lateral wall portion is annularly arranged on an inner periphery of the separating portion defining the through-hole. The lateral wall portion is connected to the first electrode layer and includes a first dielectric. The oxygen-containing rheostatic layer covers the first electrode layer, the separating portion and the lateral wall portion. The oxygen-containing rheostatic layer includes a second dielectric smaller than the first dielectric. The second electrode layer is arranged on the oxygen-containing rheostatic layer.

Abstract: A resistive random access memory includes a first electrode, a separating medium, a resistance changing layer and a second electrode. The first electrode has a mounting face. The separating medium has a first face in contact with the mounting face, a second face opposite to the first face, and an inner face extending between the first and second faces. The separating medium forms a through hole extending from the first to second face. A part of the mounting face is not covered by the separating medium. The separating medium has a first dielectric. The resistance changing layer extends along the part of the mounting face as well as the inner and second faces. The resistance changing layer has a second dielectric having a dielectric constant larger than a dielectric constant of the first dielectric by 2 or less. The second electrode is arranged on the resistance changing layer.

Abstract: A method for producing a resistive random access memory includes preparing a first metal layer and sputtering a resistive switching layer on the first metal layer. Surface treatment is conducted on the resistive switching layer by using a plasma containing mobile ions to dope the mobile ions into the resistive switching layer. The polarity of the mobile ions is opposite to the polarity of oxygen ions. Then, a second metal layer is sputtered on the resistive switching layer.

Abstract: A resistive random access memory includes two electrode layers and a resistive switching layer mounted between the two electrode layers. The resistive switching layer consists essentially of insulating material with oxygen, metal material, and mobile ions. The polarity of the mobile ions is opposite to the polarity of oxygen ions. A method for producing a resistive random access memory includes preparing a first metal layer and sputtering a resistive switching layer on the first metal layer. Surface treatment is conducted on the resistive switching layer by using a plasma containing mobile ions to dope the mobile ions into the resistive switching layer. The polarity of the mobile ions is opposite to the polarity of oxygen ions. Then, a second metal layer is sputtered on the resistive switching layer.

Abstract: A resistive random access memory including a first electrode, a separating medium, a resistance changing layer and a second electrode is disclosed. The first electrode has a mounting face. The separating medium is arranged on the first electrode and forms a through hole. A part of the first electrode is not covered by the separating medium. The separating medium has a first dielectric. The resistance changing layer extends along the part of the first electrode as well as along an inner face and the second face of the separating medium. The resistance changing layer has a second dielectric having a dielectric constant larger than a dielectric constant of the first dielectric by 2 or less. The second electrode is arranged on the resistance changing layer. In this arrangement, the problem of unstable forming voltage of the conventional resistive random access memory can be solved.

Abstract: A resistive random access memory includes two electrode layers and a resistive switching layer mounted between the two electrode layers. The resistive switching layer consists essentially of insulating material with oxygen, metal material, and mobile ions. The polarity of the mobile ions is opposite to the polarity of oxygen ions. A method for producing a resistive random access memory includes preparing a first metal layer and sputtering a resistive switching layer on the first metal layer. Surface treatment is conducted on the resistive switching layer by using a plasma containing mobile ions to dope the mobile ions into the resistive switching layer. The polarity of the mobile ions is opposite to the polarity of oxygen ions. Then, a second metal layer is sputtered on the resistive switching layer.

Abstract: A resistive random access memory including two electrode layers and a multi-resistance layer mounted between the two electrode layers. The multi-resistance layer consists essentially of insulating material with oxygen and lithium ions. The number of resistance states of a memory element can be increased by the resistive random access memory to increase the integration density of a memory module having a plurality of memory elements.

Abstract: The present invention discloses a planar torsion spring for a robot joint, including a torsion spring outer ring, a torsion spring inner ring and a plurality of elastic bodies; the elastic bodies are uniformly distributed around the circumference and connected with the torsion spring outer ring and the torsion spring inner ring respectively at their two ends; each elastic body is composed of two symmetrical elastic body units, each elastic body unit includes an outer circular hole slot, an inner circular hole slot and a connecting beam; the connecting beam connects respectively between the torsion spring inner ring and the inner circular hole slot, the inner circular hole slot and the outer circular hole slot, the outer circular hole slot and the torsion spring outer ring; a wide-angle deformation of the torsion spring is achieved through a series of elastic deformation of the inner and outer circular hole slot.

Abstract: The invention provides an Ethernet-based data transmission method, which is applied to a control system with a plurality of nodes. The method comprises: a first node caches the data needed to be sent (S101); if the current communication macro-cycle comprises the time segment for the first node to send data, the first node sends the cached data in the time segment for the first node to send data within the current communication macro-cycle; if the current communication macro-cycle does not comprise the time segment for the first node to send data, the first node does not send the cached data in the current communication macro-cycle; wherein other nodes do not send data in the time segment for the first node to send data within the current communication macro-cycle, and the communication macro-cycles have same durations and each communication macro-cycle consists of a plurality of time segments with a fixed length (S102). The invention further provides Ethernet nodes and a control system.

Abstract: The present invention discloses a planar torsion spring for a robot joint, including a torsion spring outer ring, a torsion spring inner ring and a plurality of elastic bodies; the elastic bodies are uniformly distributed around the circumference and connected with the torsion spring outer ring and the torsion spring inner ring respectively at their two ends; each elastic body is composed of two symmetrical elastic body units, each elastic body unit includes an outer circular hole slot, an inner circular hole slot and a connecting beam; the connecting beam connects respectively between the torsion spring inner ring and the inner circular hole slot, the inner circular hole slot and the outer circular hole slot, the outer circular hole slot and the torsion spring outer ring; a wide-angle deformation of the torsion spring is achieved through a series of elastic deformation of the inner and outer circular hole slot.

Abstract: A fault processing method based on industry Ethernet network, wherein exchanging devices in the network are connected by mutual redundant double links, wherein work link is in working state, the spare link is in spare state, and the method includes: detecting connection states of the double links between the exchanging devices in the network (201); switching the spare link to the work link when the work link is in fault state and the spare state is in connecting state (202). A fault processing system and exchanging device based on industry Ethernet network are further provided, which applies the ring structure of mutual redundant double links according to the invention, the network availability is ensured by switching to the spare link when multipoint faults appear in the network; and the time of fault recovery processing is reduced by switching between mutual redundant links.

Abstract: A distributed ethernet system including a plurality of switches, which switches are connected in sequence to form a ring, where after being synchronized in clock, each of the switches sequentially performs loop detection and protocol machine detection periodically according to a predetermined configuration, and sends a fault alarming message when a loop fault or a protocol machine fault occurs. A fault detecting method based on the system is further provided.

Abstract: The invention provides an Ethernet-based data transmission method, which is applied to a control system with a plurality of nodes. The method comprises: a first node caches the data needed to be sent (S101); if the current communication macro-cycle comprises the time segment for the first node to send data, the first node sends the cached data in the time segment for the first node to send data within the current communication macro-cycle; if the current communication macro-cycle does not comprise the time segment for the first node to send data, the first node does not send the cached data in the current communication macro-cycle; wherein other nodes do not send data in the time segment for the first node to send data within the current communication macro-cycle, and the communication macro-cycles have same durations and each communication macro-cycle consists of a plurality of time segments with a fixed length (S102). The invention further provides Ethernet nodes and a control system.