Patents by Inventor Jian Fei SHEN

Jian Fei SHEN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Deposition method
    Patent number: 10329667
    Abstract: A deposition method relating to semiconductor technology is presented. The deposition method includes: conducting a first deposition in a reaction chamber at a first deposition temperature; conducting a cool-down process on the reaction chamber, and conducting a second deposition during the cool-down process. In the first deposition, the thin-films deposited on the periphery of a wafer are thicker than those deposited on the center of a wafer, while in the second deposition, the thin-films deposited on the periphery of a wafer are thinner that those deposited on the center of a wafer. Therefore the thin-films deposited by this deposition method are more homogeneous in thickness that those deposited with conventional methods.
    Type: Grant
    Filed: January 5, 2018
    Date of Patent: June 25, 2019
    Assignees: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION, SEMICONDUCTOR MANUFACTURING INTERATIONAL (BEIJING) CORPORATION
    Inventors: Jian Fei Shen, Yang Wang
  • DEPOSITION METHOD
    Publication number: 20180195171
    Abstract: A deposition method relating to semiconductor technology is presented. The deposition method includes: conducting a first deposition in a reaction chamber at a first deposition temperature; conducting a cool-down process on the reaction chamber, and conducting a second deposition during the cool-down process. In the first deposition, the thin-films deposited on the periphery of a wafer are thicker than those deposited on the center of a wafer, while in the second deposition, the thin-films deposited on the periphery of a wafer are thinner that those deposited on the center of a wafer. Therefore the thin-films deposited by this deposition method are more homogeneous in thickness that those deposited with conventional methods.
    Type: Application
    Filed: January 5, 2018
    Publication date: July 12, 2018
    Inventors: Jian Fei SHEN, Yang WANG