Abstract: Improved building-integrated photovoltaic systems according to certain example embodiments may include concentrated photovoltaic skylights or other windows having a cylindrical lens array. The skylight may include an insulated glass unit, which may improve the Solar Heat Gain Coefficient (SHGC). The photovoltaic skylight and lens arrays may be used in combination with strip solar cells. Arrangements that involve lateral displacement tracking systems, or static systems (e.g., that are fixed at one, two, or more predefined positions) are contemplated herein. Such techniques may advantageously help to reduce cost per watt related, in part, to the potentially reduced amount of semiconductor material to be used for such example embodiments. A photovoltaic skylight may permit diffuse daylight to pass through into an interior of a building so as to provide lighting inside the building, while the strip solar cells absorb the direct sunlight and convert it to electricity, providing for SHGC tuning.

Abstract: A plurality of electrodes are electrically coupled to each other by conductive interconnects formed from selectively sintered nanoparticles.

Abstract: A crossover is formed by imprinting a channel, by depositing a first conductor in the channel, by anodizing a surface of the first conductor and by electroforming a second conductor across the first conductor.

Abstract: Methods and apparatuses for forming components or circuits by ejecting a fluid including materials in a single ligament are disclosed.

Abstract: A color image is displayed on a screen and a luminance image is projected onto the screen. The luminance image has a greater resolution than the color image.

Abstract: A crossover is formed by imprinting a channel, by depositing a first conductor in the channel, by anodizing a surface of the first conductor and by electroforming a second conductor across the first conductor.

Abstract: Embodiments of projecting a luminance image are disclosed.

Abstract: Embodiments of methods, apparatuses, devices, and/or systems for forming an interconnect are described.

Abstract: A method for forming a metal-insulator-metal device includes imprinting at least one first layer to form a first impression, removing a portion of at least one second layer through the first depression to form a recess in the at least one second layer bordered by a first side, a first overhang along the first side, a second opposite side and a second overhang along the second side. The method also includes depositing a first metal in the recess spaced from the first side and the second side and oxidizing the first metal to create a non-linear dielectric.

Abstract: Embodiments of methods, apparatuses, devices, and/or systems for forming an interconnect are described.

Abstract: A process is described for fabricating an active addressing component such as a metal-insulator-metal (MIM) device by creating surface relief levels to form trenches, and depositing a metal in the trenches. The metal is anodized to create a non-linear dielectric. A second metal is deposited in the trenches to create an electrical with the dielectric which a contact is provided, and transferring the MIM device to a substrate by adhesive transfer.

Abstract: A metal-insulator-metal device includes a layer having a major dimensional surface. The layer has a first portion having a first boundary, a second metal portion having a second boundary facing the first boundary in a direction parallel to the surface and a non-linear dielectric between the first boundary and the second boundary and having a thickness orthogonal to the surface.

Abstract: A method for forming a metal-insulator-metal device includes imprinting at least one first layer to form a first impression, removing a portion of at least one second layer through the first depression to form a recess in the at least one second layer bordered by a first side, a first overhang along the first side, a second opposite side and a second overhang along the second side. The method also includes depositing a first metal in the recess spaced from the first side and the second side and oxidizing the first metal to create a non-linear dielectric.

Abstract: A method of conveying information from an electronic identification label to an interrogator includes coupling energy from an external field into a resonant circuit of the electronic identification label. The method also includes the electronic identification label periodically storing and discharging an amount of the coupled energy wherein the period that the electronic identification label stores and discharges the energy conveys information about the electronic identification label to the interrogator.

Abstract: Embodiments of methods, apparatuses, devices, and/or systems for forming an interconnect are described.

Abstract: A method of controlling a display system includes projecting an image onto a surface, projecting a control beam onto the surface, tracing an interpretable pattern with the control beam, detecting the interpretable pattern, and correlating the interpretable pattern with a predefined command.

Abstract: Embodiments of methods, apparatuses, devices, and/or systems to form a conductive structure are described.

Abstract: Methods and apparatuses for forming components or circuits by ejecting a fluid including materials in a single ligament are disclosed.

Abstract: A process is described for fabricating an active addressing component such as a metal-insulator-metal (MIM) device by creating surface relief levels to form trenches, and depositing a metal in the trenches. The metal is anodized to create a non-linear dielectric. A second metal is deposited in the trenches to create an electrical with the dielectric which a contact is provided, and transferring the MIM device to a substrate by adhesive transfer.

Abstract: One exemplary embodiment of the present disclosure includes a solution-processed thin film transistor having a number of a number of conductive solution-processed thin film contacts, semiconductor solution-processed thin film active regions, and dielectric solution-processed thin film isolations formed in a sequence and organization to form a solution-processed thin film structure. One or more of the semiconductor solution-processed thin film active regions and the dielectric solution-processed thin film isolations have been selectively ablated.