Abstract: Various embodiments of a magnetic memory element, including a storage layer and a reference layer, are disclosed. The storage layer includes two conjugate magnetic domain segments having opposing helicities. The reference layer is permanently magnetized. A non-magnetic layer is interposed between the two magnetic layers. The boundaries of the two conjugate magnetic domain segments of the storage layer define domain walls along the radial direction thereof. The magnetic moment direction of one domain wall points inward and the magnetic moment direction of the other domain wall points outward. The two domain walls always attract each other, leaving one segment significantly larger than the other. These two different conditions (each longer the other) define two binary data states. By sending a vertical current through the magnetic memory element, transitions between the memory states can be achieved. Also disclosed are a memory cell, a memory device, and a computing device.

Abstract: A system determines bit error rate in a sampled data system having a disc formed of a magnetic medium and a data head for writing data on the disc and retrieving data from the disc. A pattern is written on the disc, which includes isolated instances associated with a predetermined event. The pattern is retrieved from the disc and the isolated instances are combined to obtain a representative instance having a reduced media noise component. The representative instance is combined with each, of the isolated instances to obtain noise sequences. An autocorrelation component is obtained based on the instances read from the disc and the noise sequences. A channel filter is developed having an impulse response based on the representative instance and based on the channel requirements for a predetermined channel model.

Abstract: A magnetic sensor. According to one embodiment, the sensor comprises a synthetic antiferromagnetic (SAF) layer having first and second wing regions and an active region therebetween. The SAF layer includes a non-magnetic metal layer having first and second wing region portions and an active region portion therebetween, the non-magnetic metal layer including first and second opposing surfaces. The SAF layer also includes a first ferromagnetic layer adjacent a first surface of the non-magnetic metal layer and having first and second wing region portions and an active region portion therebetween. The SAF layer further includes a second ferromagnetic layer adjacent the second surface of the non-magnetic metal layer and including a first wing region portion adjacent the first wing region portion of the non-magnetic metal layer and a second wing region portion adjacent the second wing region portion of the non-magnetic metal layer.

Abstract: The invention relates to control systems for data storage media. More particularly, the invention relates to a system, method and apparatus for forming various frequency modulation patterns on storage media for providing position error signals. The invention also relates to forming various frequency modulation patterns on storage media for providing position error signals having a continuously varying frequency that is proportional to the position of a read/write transducer head within a track defined on a storage medium. The invention also relates to providing a demodulated signal that is proportional to a continuously varying position error signal frequency and thus to the position of the read/write head within a track defined on a storage medium.

Abstract: Various embodiments of a magnetic memory element, including a storage layer and a reference layer, are disclosed. The storage layer includes two conjugate magnetic domain segments having opposing helicities. The reference layer is permanently magnetized. A nonmagnetic layer is interposed between the two magnetic layers. The boundaries of the two conjugate magnetic domain segments of the storage layer define domain walls along the radial direction thereof. The magnetic moment direction of one domain wall points inward and the magnetic moment direction of the other domain wall points outward. The two domain walls always attract each other, leaving one segment significantly larger than the other. These two different conditions (each longer the other) define two binary data states. By sending a vertical current through the magnetic memory element, transitions between the memory states can be achieved. Also disclosed are a memory cell, a memory device, and a computing device.

Abstract: A magnetoresistive read head. The magnetoresistive read head includes a magnetoresistive element including a lower surface and an upper surface, wherein an electrical resistance of the magnetoresistive element varies in response to varying magnetic fields adjacent to the lower surface of the magnetoresistive element, and a magnetic element adjacent to the upper surface of the magnetoresistive element.

Abstract: The invention relates to control systems for data storage media. More particularly, the invention relates to a system, method and apparatus for forming various frequency modulation patterns on storage media for providing position error signals. The invention also relates to forming various frequency modulation patterns on storage media for providing position error signals having a continuously varying frequency that is proportional to the position of a read/write transducer head within a track defined on a storage medium. The invention also relates to providing a demodulated signal that is proportional to a continuously varying position error signal frequency and thus to the position of the read/write head within a track defined on a storage medium.

Abstract: A magnetoresistive read head. The magnetoresistive read head includes a magnetoresistive element including a lower surface and an upper surface, wherein an electrical resistance of the magnetoresistive element varies in response to varying magnetic fields adjacent to the lower surface of the magnetoresistive element, and a magnetic element adjacent to the upper surface of the magnetoresistive element.

Abstract: A magnetic sensor. According to one embodiment, the sensor comprises a synthetic antiferromagnetic (SAF) layer having first and second wing regions and an active region therebetween. The SAF layer includes a non-magnetic metal layer having first and second wing region portions and an active region portion therebetween, the non-magnetic metal layer including first and second opposing surfaces. The SAF layer also includes a first ferromagnetic layer adjacent a first surface of the non-magnetic metal layer and having first and second wing region portions and an active region portion therebetween. The SAF layer further includes a second ferromagnetic layer adjacent the second surface of the non-magnetic metal layer and including a first wing region portion adjacent the first wing region portion of the non-magnetic metal layer and a second wing region portion adjacent the second wing region portion of the non-magnetic metal layer.

Abstract: A magnetic head has an exchange isolated poletip located between a shield of an MR sensor and a write pole of an inductive sensor. The poletip is preferably made of high Bs material, allowing the flux that travels through the much larger pole layer to funnel through the poletip without saturation. The poletip is isolated from the shield layer in order to decouple the shield layer from unfavorable domain patterns that may occur in the poletip, which in turn reduces noise in the sensor, while the shield layer serves to complete the inductive circuit. Despite having a poletip isolated by nonmagnetic material, heads built according to this invention have demonstrated high overwrite as well as remarkably low noise.

Abstract: A device including a magnetic material having a magnetization configuration that is circular in a plane, and a word line for producing a magnetic field in the plane, the magnetic field being radial with respect to a point in the plane and within the circular magnetization configuration.

Abstract: Magnetic transducers are formed with common magnetic exchange layers capable of providing assertive and complementary signals. The transducers include an assertive transducer portion and a complementary transducer portion. Between the two transducer portions is a common bias portion which comprises an antiferromagnetic layer providing bias fields in different directions to the respective transducer portions. During normal operations, a current is directed into each of the transducer portions. The assertive transducer portion, being magnetically biased in one direction, generates a varying voltage as an assertive version of the electrical signal. The complementary transducer, being magnetically biased in another direction, generates another varying voltage as a complementary version of the electrical signal. In one embodiment, the transducer portions are implemented to operate as an anisotropic MR(AMR) sensor. In a second embodiment, the transducer portions operate as a giant MR(GMR) or spin valve sensor.

Abstract: A stable pinned structure for a magnetoresistive sensor includes a pair of ferromagnetic layers sandwiched about an antiferromagnetic layer, the ferromagnetic layers having substantially opposite magnetic directions magnetostatically coupled and pinned by the antiferromagnetic layer. A free layer of ferromagnetic material has a magnetic direction that can rotate in the presence of an applied magnetic field so that the field can be sensed. A second free layer may be provided, such that the free layers are sandwiched about the pinned structure, with the sensor configured for amplifying signals and minimizing common mode noise.

Abstract: Magnetic transducers are formed with common magnetic exchange layers capable of providing assertive and complementary signals. The transducers include an assertive transducer portion and a complementary transducer portion. Between the two transducer portions is a common bias portion which comprises an antiferromagnetic layer providing bias fields in different directions to the respective transducer portions. During normal operations, a current is directed into each of the transducer portions. The assertive transducer portion, being magnetically biased in one direction, generates a varying voltage as an assertive version of the electrical signal. The complementary transducer, being magnetically biased in another direction, generates another varying voltage as a complementary version of the electrical signal. In one embodiment, the transducer portions are implemented to operate as an anisotropic MR(AMR) sensor. In a second embodiment, the transducer portions operate as a giant MR(GMR) or spin valve sensor.

Abstract: A compact read/write head is provided having a biased GMR element. Biasing of the GMR element provides distinguishable response to the rising and falling edges of a recorded pulse on an adjacent medium. It also improves the linearity of the response and helps to reduce noise.

Abstract: A compact read/write head is provided having a biased GMR element. Biasing of the GMR element provides distinguishable response to the rising and falling edges of a recorded pulse on an adjacent medium. It also improves the linearity of the response and helps to reduce noise.