Abstract: A reshaping method for metal product includes acquiring position data information of a workpiece; converting the position data information into coordinate information, and fitting the coordinate information to obtain a surface contour curve of the workpiece; comparing the surface contour curve with a standard contour curve to generate a comparison result; obtaining reshaping information of the workpiece based on the comparison result; and controlling the reshaping system to reshape the workpiece. The disclosure acquires position data information of the workpiece by measuring, converts the position data information into coordinate information, fits the coordinate information to obtain the surface contour curve of the workpiece, compares the surface contour curve with the standard contour curve to obtain deformation situation, and reshapes the workpiece according to the reshaping information based on the deformation situation, which improves efficiency of workpiece reshaping and reducing labor costs.

Abstract: Flexible thermoelectric devices including an array of slot openings on a flexible substrate, and methods of making and using the same are provided. The slot openings on the flexible substrate can help remove the tension or compression induced during bending of the devices. Slot openings each extend along a cross direction substantially perpendicular to the longitudinal direction of the substrate.

Abstract: A flexible polymeric dielectric layer (12) having first and second major surfaces, the first major surface having a conductive layer (20) thereon, the dielectric layer having at least one conduit (10) extending from the second major surface to the first major surface, the conduit having at least one lateral dimension of at least about one centimeter and being at least partially filled with conductive material (18), the conductive layer including at least one conductive feature (21) substantially aligned with the conduit (10), the conductive feature (21) supporting a plurality of light emitting semiconductor devices (22).

Abstract: A capacitive touch sensitive apparatus includes a touch sensitive viewing area configured to detect a location of a touch applied to the touch sensitive viewing area by detecting a change in a coupling capacitance. A border area surrounds the touch sensitive viewing area. An electrically conductive first electrode includes an active portion disposed in and extending across the touch sensitive viewing area and an end portion at an end of the first electrode disposed in the border area for connection to a controller. The active portion of the first electrode has a substantially uniform first sheet resistance across the viewing area. The end portion of the first electrode is patterned in the form of an electrically conductive mesh including a plurality of interconnected conductive traces defining a plurality of interstices therebetween, the traces having substantially the first sheet resistance, and the interstices having a higher second sheet resistance.

Abstract: A reflection sheet and a method of manufacturing a reflection sheet are disclosed. The reflection sheet comprises a substrate layer and a reflective layer formed on the substrate layer, wherein the reflective layer comprises an alloy consisting of silver (Ag), palladium (Pd) and neodymium (Nd).

Abstract: Provided is a light emitting semiconductor device comprising a flexible dielectric layer, a conductive layer on at least one side of the dielectric layer, at least one cavity or via in the dielectric substrate, and a light emitting semiconductor supported by the cavity or via. Also provided is a support article comprising a flexible dielectric layer, a conductive layer on at least one side and at least one cavity or via in the dielectric substrate. Further provided is a flexible light emitting semiconductor device system comprising the above-described light emitting semiconductor device attached to the above-described support article.

Abstract: Provided is a flexible light emitting semiconductor device, such as an LED device, that includes a flexible dielectric layer having first and second major surfaces with a conductive layer on the first major surface and at least one cavity in the first major surface with a conductive layer in the cavity that supports a light emitting semiconductor device. The conductive layer in the cavity is electrically isolated from the second major surface of the dielectric layer.

Abstract: A reflection sheet and a method of manufacturing a reflection sheet are disclosed. The reflection sheet comprises a substrate layer and a reflective layer formed on the substrate layer, wherein the reflective layer comprises an alloy consisting of silver (Ag), palladium (Pd) and neodymium (Nd).

Abstract: Provided is a flexible light emitting semiconductor device (26), such as an LED device, that includes a flexible dielectric layer (12) having first and second major surfaces and at least one via (10) extending through the dielectric layer from the first to the second major surface, with a conductive layer (19, 20, 18) on each of the first and second major surfaces and in the via. The conductive layer (18) in the via supports a light emitting semiconductor device (26) and is electrically isolated from the conductive layer (19) on the first major surface of the dielectric layer.

Abstract: A flexible polymeric dielectric layer (12) having first and second major surfaces, the first major surface having a conductive layer (20) thereon, the dielectric layer having at least one conduit (10) extending from the second major surface to the first major surface, the conduit having at least one lateral dimension of at least about one centimeter and being at least partially filled with conductive material (18), the conductive layer including at least one conductive feature (21) substantially aligned with the conduit (10), the conductive feature (21) supporting a plurality of light emitting semiconductor devices (22).

Abstract: Provided is a light emitting semiconductor device comprising a flexible dielectric layer, a conductive layer on at least one side of the dielectric layer, at least one cavity or via in the dielectric substrate, and a light emitting semiconductor supported by the cavity or via. Also provided is a support article comprising a flexible dielectric layer, a conductive layer on at least one side and at least one cavity or via in the dielectric substrate. Further provided is a flexible light emitting semiconductor device system comprising the above-described light emitting semiconductor device attached to the above-described support article.

Abstract: Provided is a light emitting semiconductor device comprising a flexible dielectric layer, a conductive layer on at least one side of the dielectric layer, at least one cavity or via in the dielectric substrate, and a light emitting semiconductor supported by the cavity or via. Also provided is a support article comprising a flexible dielectric layer, a conductive layer on at least one side and at least one cavity or via in the dielectric substrate. Further provided is a flexible light emitting semiconductor device system comprising the above-described light emitting semiconductor device attached to the above-described support article.

Abstract: Provided is a light emitting semiconductor device comprising a flexible dielectric layer, a conductive layer on at least one side of the dielectric layer, at least one cavity or via in the dielectric substrate, and a light emitting semiconductor supported by the cavity or via. Also provided is a support article comprising a flexible dielectric layer, a conductive layer on at least one side and at least one cavity or via in the dielectric substrate. Further provided is a flexible light emitting semiconductor device system comprising the above-described light emitting semiconductor device attached to the above-described support article.

Abstract: Provided is a flexible light emitting semiconductor device (26), such as an LED device, that includes a flexible dielectric layer (12) having first and second major surfaces and at least one via (10) extending through the dielectric layer from the first to the second major surface, with a conductive layer (19, 20, 18) on each of the first and second major surfaces and in the via. The conductive layer (18) in the via supports a light emitting semiconductor device (26) and is electrically isolated from the conductive layer (19) on the first major surface of the dielectric layer.

Abstract: Provided is a flexible light emitting semiconductor device, such as an LED device, that includes a flexible dielectric layer having first and second major surfaces with a conductive layer on the first major surface and at least one cavity in the first major surface with a conductive layer in the cavity that supports a light emitting semiconductor device. The conductive layer in the cavity is electrically isolated from the second major surface of the dielectric layer.

Abstract: The present invention is directed to a substrate for subsequent eutectic bonding with a subsequently applied metal to provide, or as a precursor to the provision of, a circuit substrate. The circuit substrate comprises a dielectric film and a layer of an oxide or oxides of a metal on the film. The metal oxide layer has been formed by sputtering the metal of the metal oxide or oxides onto a surface of the film in the presence of an inert atmosphere save for at least one reactive gas content to provide the oxygen of the oxides.