Patents by Inventor Jian-Yih Wang

Jian-Yih Wang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11963347
    Abstract: A memory device includes a transistor, an anti-fuse element, a source/drain contact, a first gate via, and a second gate via. The transistor is over a substrate. The anti-fuse element is over the substrate and is connected to the transistor in series. The source/drain contact is connected to a source/drain region of the transistor. The first gate via is connected to a first gate structure of the transistor. The first gate structure of the transistor extends along a first direction in a top view. The second gate via is connected to a second gate structure of the anti-fuse element. The second gate via is between the first gate via and the source/drain contact along the first direction in the top view.
    Type: Grant
    Filed: April 21, 2023
    Date of Patent: April 16, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chiung-Ting Ou, Ming-Yih Wang, Jian-Hong Lin
  • Publication number: 20160153075
    Abstract: A magnesium alloy is disclosed. The magnesium alloy includes magnesium (Mg), 6-12 wt % of lithium (Li) and 1-10 wt % of aluminum (Al). A temperature range between a solidus and a liquidus of the magnesium alloy is equal to or larger than 50° C.
    Type: Application
    Filed: October 13, 2015
    Publication date: June 2, 2016
    Applicant: AMLI MATERIALS TECHNOLOGY CO., LTD.
    Inventors: Jian-Yih WANG, Ming-Tarng YEH, Cheng-Yuan WU
  • Patent number: 6893515
    Abstract: The present invention is related to a manufacturing process for highly ductile magnesium alloy, which is processable under plasticization at ambient temperature. The process includes melting in vacuum melt furnace or inert gas protected furnace, teeming into ingot, extrusion or rolling into finished material. Such highly ductile magnesium alloy has extremely excellent plastic deformability at ambient temperature and improves completely the deficiency associated with traditional commercial magnesium alloy that lacks plastic deformability at ambient temperature. The material is suitable for the structural components in automobiles, 3C products, appliances and office automation products.
    Type: Grant
    Filed: September 12, 2002
    Date of Patent: May 17, 2005
    Assignee: Hsu-Yang Technologies Co., Ltd.
    Inventors: Jin-Chin Guan, Ming-Tarng Yeh, Jian-Yih Wang
  • Publication number: 20040040635
    Abstract: The present invention is related to a manufacturing process for highly ductile magnesium alloy, which is processable under plasticization at ambient temperature. The process includes melting in vacuum melt furnace or inert gas protected furnace, teeming into ingot, extrusion or rolling into finished material. Such highly ductile magnesium alloy has extremely excellent plastic deformability at ambient temperature and improves completely the deficiency associated with traditional commercial magnesium alloy that lacks plastic deformability at ambient temperature. The material is suitable for the structural components in automobiles, 3C products, appliances and office automation products.
    Type: Application
    Filed: September 12, 2002
    Publication date: March 4, 2004
    Applicant: Hsu-Yang Technologies Co., Ltd.
    Inventors: Jin-Chin Guan, Ming-Tarng Yeh, Jian-Yih Wang