Abstract: In a method of pattern formation information including a pattern size on a reticle is received. A width of an EUV radiation beam is adjusted in accordance with the information. The EUV radiation beam is scanned on the reticle. A photo resist layer is exposed with a reflected EUV radiation beam from the reticle. An increase of intensity per unit area of the EUV radiation beam on the reticle after the adjusting the width is greater when the width before adjustment is W1 compared to an increase of intensity per unit area of the EUV radiation beam on the reticle after the adjusting the width when the width before adjustment is W2 when W1>W2.

Abstract: In a method of pattern formation information including a pattern size on a reticle is received. A width of an EUV radiation beam is adjusted in accordance with the information. The EUV radiation beam is scanned on the reticle. A photo resist layer is exposed with a reflected EUV radiation beam from the reticle. An increase of intensity per unit area of the EUV radiation beam on the reticle after the adjusting the width is greater when the width before adjustment is W1 compared to an increase of intensity per unit area of the EUV radiation beam on the reticle after the adjusting the width when the width before adjustment is W2 when W1>W2.

Abstract: In a method of pattern formation information including a pattern size on a reticle is received. A width of an EUV radiation beam is adjusted in accordance with the information. The EUV radiation beam is scanned on the reticle. A photo resist layer is exposed with a reflected EUV radiation beam from the reticle. An increase of intensity per unit area of the EUV radiation beam on the reticle after the adjusting the width is greater when the width before adjustment is W1 compared to an increase of intensity per unit area of the EUV radiation beam on the reticle after the adjusting the width when the width before adjustment is W2 when W1>W2.

Abstract: The present disclosure relates to an extreme ultraviolet (EUV) radiation source having a collector mirror oriented to reduce contamination of fuel droplet debris. In some embodiments, the EUV radiation source has a fuel droplet generator that provides a plurality of fuel droplets to an EUV source vessel. A primary laser is configured to generate a primary laser beam directed towards the plurality of fuel droplets. The primary laser beam has a sufficient energy to ignite a plasma from the plurality of fuel droplets, which emits extreme ultraviolet radiation. A collector mirror, configured to focus the extreme ultraviolet radiation to an exit aperture of the EUV source vessel, which is oriented so that a normal vector extending outward from a vertex of the collector mirror intersects a direction of a gravitation force by an angle that is less than 90°.

Abstract: The present disclosure relates to an extreme ultraviolet (EUV) radiation source having a collector mirror oriented to reduce contamination of fuel droplet debris. In some embodiments, the EUV radiation source has a fuel droplet generator that provides a plurality of fuel droplets to an EUV source vessel. A primary laser is configured to generate a primary laser beam directed towards the plurality of fuel droplets. The primary laser beam has a sufficient energy to ignite a plasma from the plurality of fuel droplets, which emits extreme ultraviolet radiation. A collector mirror, configured to focus the extreme ultraviolet radiation to an exit aperture of the EUV source vessel, which is oriented so that a normal vector extending outward from a vertex of the collector mirror intersects a direction of a gravitation force by an angle that is less than 90°.