Patents by Inventor JIAN Z. REN

JIAN Z. REN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Methods for forming a metal gate structure on a substrate
    Patent number: 8580630
    Abstract: Methods for forming a metal gate structure on a substrate are provided herein. In some embodiments, a method for forming a metal gate structure on a substrate having a dielectric layer formed on the substrate may include depositing a metal layer while providing a process gas comprising oxygen to form an oxygen doped work function layer atop the dielectric layer; and depositing a metal gate layer atop dielectric layer.
    Type: Grant
    Filed: October 21, 2011
    Date of Patent: November 12, 2013
    Assignee: Applied Materials, Inc.
    Inventors: Jianxin Lei, Xinyu Fu, Srinivas Gandikota, Jian Z. Ren
  • METHODS FOR FORMING A METAL GATE STRUCTURE ON A SUBSTRATE
    Publication number: 20130102144
    Abstract: Methods for forming a metal gate structure on a substrate are provided herein. In some embodiments, a method for forming a metal gate structure on a substrate having a dielectric layer formed on the substrate may include depositing a metal layer while providing a process gas comprising oxygen to form an oxygen doped work function layer atop the dielectric layer; and depositing a metal gate layer atop dielectric layer.
    Type: Application
    Filed: October 21, 2011
    Publication date: April 25, 2013
    Applicant: APPLIED MATERIALS, INC.
    Inventors: JIANXIN LEI, XINYU FU, SRINIVAS GANDIKOTA, JIAN Z. REN