Patents by Inventor Jianjun Zhou

Jianjun Zhou has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20050270098
    Abstract: A single-stage amplifier includes (1) first and second “gain” transistors coupled in a common source configuration, (2) first and second resistors providing self-biasing for the first and second transistors, respectively, (3) first and second current sources providing bias currents for the first and second transistors, respectively, and (4) a load impedance coupled between the drains of the first and second transistors. The amplifier may further include (5) third and fourth “compensation” transistors coupled in parallel with, and used to compensate parasitic capacitances of, the first and second transistors, respectively, and (6) third and fourth resistors providing self-biasing for the third and fourth transistors, respectively. Variable gain may be achieved by varying the bias currents for the gain transistors. A two-stage amplifier may be formed with two stages coupled in cascade, with each stage including most or all of the circuit elements of the single-stage amplifier.
    Type: Application
    Filed: September 1, 2004
    Publication date: December 8, 2005
    Inventors: Xuejun Zhang, Jianjun Zhou
  • Publication number: 20040232991
    Abstract: Compensation for variations in temperature and manufacturing process of a MOSFET operating in its sub-threshold mode. The compensation may include circuitry containing at least a second MOSFET that may also operate in its sub-threshold mode. The operational characteristics of the second MOSFET may be closely matched to those of the first MOSFET, and the second MOSFET may be contained on the same substrate.
    Type: Application
    Filed: May 23, 2003
    Publication date: November 25, 2004
    Inventors: Jianjun Zhou, Xuejun Andy Zhang
  • Patent number: 6819183
    Abstract: Compensation for variations in temperature and manufacturing process of a MOSFET operating in its sub-threshold mode. The compensation may include circuitry containing at least a second MOSFET that may also operate in its sub-threshold mode. The operational characteristics of the second MOSFET may be closely matched to those of the first MOSFET, and the second MOSFET may be contained on the same substrate.
    Type: Grant
    Filed: May 23, 2003
    Date of Patent: November 16, 2004
    Assignee: Qualcomm, Incorporated
    Inventors: Jianjun Zhou, Xuejun (Andy) Zhang
  • Patent number: 6531860
    Abstract: A power detector (50) detects a power level of an amplified signal (S20) produced by a power amplifier (16) on the same integrated circuit (100). The power detector compensates for an effect of temperature variations on the magnitude of the detected power level.
    Type: Grant
    Filed: June 14, 2001
    Date of Patent: March 11, 2003
    Assignee: Qualcomm Inc.
    Inventors: Jianjun Zhou, Jonathan Klaren, Charles J. Persico
  • Publication number: 20030042885
    Abstract: A power detector (50) detects a power level of an amplified signal (S20) produced by a power amplifier (16) on the same integrated circuit (100). The power detector compensates for an effect of temperature variations on the magnitude of the detected power level.
    Type: Application
    Filed: June 14, 2001
    Publication date: March 6, 2003
    Inventors: Jianjun Zhou, Jonathan Klaren, Charles J. Persico