Abstract: An open-vocabulary diffusion-based panoptic segmentation system is not limited to perform segmentation using only object categories seen during training, and instead can also successfully perform segmentation of object categories not seen during training and only seen during testing and inferencing. In contrast with conventional techniques, a text-conditioned diffusion (generative) model is used to perform the segmentation. The text-conditioned diffusion model is pre-trained to generate images from text captions, including computing internal representations that provide spatially well-differentiated object features. The internal representations computed within the diffusion model comprise object masks and a semantic visual representation of the object. The semantic visual representation may be extracted from the diffusion model and used in conjunction with a text representation of a category label to classify the object.

Abstract: This application provides a bullet-screen comment display method, where the bullet-screen comment display method includes: determining bullet-screen comment area basic information corresponding to a target bullet-screen comment from a target picture; identifying an invalid pixel set of the target picture; determining a bullet-screen comment filling area corresponding to the target bullet-screen comment based on the bullet-screen comment area basic information and the invalid pixel set; and filling the bullet-screen comment filling area with the target bullet-screen comment.

Abstract: A method and device for mixedly playing a program are provided by embodiments of the disclosure, the method of mixedly playing a program including: playing, in a first player interface of an application, a first multimedia program in a first list, the application being used to play at least two types of multimedia programs included in the first list; receiving a switching operation in the application, the switching operation being used to instruct the first multimedia program being played to switch to a second multimedia program in the first list; and if a type of the first multimedia program is different from the second multimedia program, playing the second multimedia program in a second player interface of the application, the first player interface and the second player interface being used to play different types of multimedia programs respectively.

Abstract: An organic-inorganic hybrid porous material. The organic-inorganic hybrid porous material contains a doping element A are provided. In some embodiments, the element A is one or more selected from: Li, Na, K, Rb, Cs, Sr, Zn, Mg, Ca, or any combination thereof. An external specific surface area of the organic-inorganic hybrid porous material is 1 to 100 m2/g. A ratio of the external specific surface area to a total specific surface area of the organic-inorganic hybrid porous material is 0.7 to 0.9.

Abstract: The present disclosure provides a method and device for intelligent control of heating furnace combustion based on a big data cloud platform, which relates to the technical field of artificial intelligence control. The method includes: construction of big data cloud platform based on production and operation parameters of the heating furnace; identification of key factors in the production process of the heating furnace by using big data mining technology; independent deployment of traditional heating furnace combustion control systems based on the mechanism model; and integration of cloud platform big data expert knowledge base and the heating furnace combustion intelligent control system.

Abstract: The present application discloses a sensing signal receiving system and method. The system includes an interface module configured to receive a sensing signal, a narrowband frequency-selective module configured to determine a frequency-selective signal in the sensing signal according to a preset receive frequency, a high amplification module configured to amplify the received frequency-selective signal to obtain an amplified signal, and an in-phase comparison module configured to convert the amplified signal into a TTL standard signal. A frequency of the frequency-selective signal is the preset receive frequency or is a narrowband section including the preset receive frequency. The narrowband frequency-selective module is further configured to output the frequency-selective signal to the high amplification module.

Abstract: Provided in embodiments of the disclosure are a battery heat adjustment circuit and method, a storage medium and an electronic device. The circuit includes a battery pack, the battery pack including at least two battery blocks, and each battery block including one or more battery cells; a first controller, respectively connected to partial battery blocks included in the battery pack, and configured to detect a state of partial battery blocks included in the battery pack and control, based on a state detection result, partial battery blocks included in the battery pack to discharge; and a heat adjustment loop, connected to the first controller, and configured to respectively adjust, by using electric energy released by partial battery blocks included in the battery pack, heat of partial battery blocks included in the battery pack. By means of the disclosure, the problems that heating and heat balance of zones in the battery may not be simultaneously solved in the relevant art is solved.

Abstract: Provided in embodiments of the disclosure are a battery heat adjustment circuit and method, a storage medium and an electronic device. The circuit includes a battery pack, the battery pack including at least two battery blocks, and each battery block including one or more battery cells; a first controller, respectively connected to partial battery blocks included in the battery pack, and configured to detect a state of partial battery blocks included in the battery pack and control, based on a state detection result, partial battery blocks included in the battery pack to discharge; and a heat adjustment loop, connected to the first controller, and configured to respectively adjust, by using electric energy released by partial battery blocks included in the battery pack, heat of partial battery blocks included in the battery pack. By means of the disclosure, the problems that heating and heat balance of zones in the battery may not be simultaneously solved in the relevant art is solved.

Abstract: This miniature neutron generator is for active detection of highly enriched uranium using a movable detection system. It is a small size, lightweight, low power consumption neutron generator with ease of operation and maintenance. The detector is based on a simplified ion source and ion transport system.

Abstract: Vacancies and dopant ions are introduced near the surface of a semiconductor wafer. The dopant ions which diffuse by an interstitialcy mechanism have diffusivity greatly reduced, which leads to a very low resistivity doped region and a very shallow junction.

Abstract: A method of forming a stable unction on a microelectronic structure on a semiconductor wafer having a silicon surface layer on a substrate includes the following steps: implanting dopant ions into the surface layer; cleaning and oxidizing the surface layer, and twice annealing the wafer to recover a damaged silicon crystal structure of the surface layer resulting from the low energy ion implantation. The first annealing process uses a temperature range of 800° C. to 1200° C. for a duration from about a fraction of a second to less than about 1000 seconds, with a ramp-up rate of about 50° C./second to about 1000° C./second. The second annealing process uses a temperature range of 400° C. to 650° C. for a time period of from about 1 second to about 10 hours, and more preferably, from about 60 seconds to about 1 hour. Both annealing processes include cooling processes.

Abstract: A method of forming a stable junction on a microelectronic structure on a semiconductor wafer having a silicon surface layer on a substrate includes the following steps: implanting dopant ions into the surface layer; cleaning and oxidizing the surface layer, and twice annealing the wafer to recover a damaged silicon crystal structure of the surface layer resulting from the low energy ion implantation. The first annealing process uses a temperature range of 800° C. to 1200° C. for a duration from about a fraction of a second to less than about 1000 seconds, with a ramp-up rate of about 50° C./second to about 1000° C./second. The second annealing process uses a temperature range of 400° C. to 650° C. for a time period of from about 1 second to about 10 hours, and more preferably, from about 60 seconds to about 1 hour. Both annealing processes include cooling processes.

Abstract: Vacancies and dopant ions are introduced near the surface of a semiconductor wafer. The dopant ions which diffuse by an interstitialcy mechanism have diffusivity greatly reduced, which leads to a very low resistivity doped region and a very shallow junction.

Abstract: A method of forming a stable junction on a microelectronic structure on a semiconductor wafer having a silicon surface layer on a substrate includes the following steps: implanting dopant ions into the surface layer; cleaning and oxidizing the surface layer, and twice annealing the wafer to recover a damaged silicon crystal structure of the surface layer resulting from the low energy ion implantation. The first annealing process uses a temperature range of 800° C. to 1200° C. for a duration from about a fraction of a second to less than about 1000 seconds, with a ramp-up rate of about 50° C./second to about 1000° C./second. The second annealing process uses a temperature range of 400° C. to 650° C. for a time period of from about 1 second to about 10 hours, and more preferably, from about 60 seconds to about 1 hour. Both annealing processes include cooling processes.

Abstract: Thermal neutron irradiation of superconducting body compositions into which Li or B has been incorporated as a unit cell external or internal dopant introduces by the nuclear reaction of the dopant pinning centers which substantially improve the critical current density of the body.