Abstract: A calculation system for predicting a proppant embedding depth based on a shale softening effect is provided, including a sampling test terminal, a scheduling module, a monitoring module, and a calculation module, wherein the scheduling module, the monitoring module, and the calculation module are connected in communication, and the monitoring module is connected to an external operating system through a wireless network, wherein the external operating system is configured to perform a hydraulic fracturing operation and receive a first control signal and/or a second control signal from the monitoring module. The sampling test terminal is configured to test the samples and obtain test data. The scheduling module is configured to determine a target construction parameter.

Abstract: An internal detection system of stress concentration of an oil and gas pipeline based on unsaturated orthogonally magnetization is provided. The system comprises a detection device and a processing device; the detection device comprises a detection probe; the detection probe comprises a magnetizing device and a magnetic signal acquisition device; the magnetizing device is fixedly connected with the magnetic signal acquisition device; the magnetizing device is configured to magnetize a pipeline to be detected, so that the pipeline generates a magnetized magnetic field; the magnetic signal acquisition device is configured to acquire a magnetic signal of the magnetized magnetic field to obtain an acquired signal and send the acquired signal to the processing device; the processing device is configured to receive the acquired signal and obtain a stress concentration area of the pipeline based on the acquired signal.

Abstract: The invention relates to a wide spectrum multi-band detection structure with selective absorption enhancement and its preparation method. The structure comprises a plurality of sub-pixel units capable of detecting incident light in different bands. Each sub-pixel unit is composed of a square well-shaped microstructure array and a metal lower electrode (2), a photosensitive layer (3) and an upper electrode (4) on the surface thereof. The size and array spacing of square well-shaped microstructures in different sub-pixel units are determined according to the detection bands of the sub-pixel units where they are located. The upper openings of the square well-shaped microstructures are hollow to form a resonant cavity, and the adjacent square well-shaped microstructures in the same sub-pixel unit form a resonant cavity, thus solving the problem that the detector structure in the prior art cannot simultaneously realize visible light-near infrared multi-band absorption enhancement detection.

Abstract: The present invention is directed to electrical circuits and methods. According to a specific embodiment, the present invention provides a voltage compensation mechanism for one or more single-phone avalanche diodes (SPADs). A reference voltage is generated based at least on an operating voltage of the SPADs. The reference voltage is coupled to a charge pump that generates a compensation voltage for the diodes. There are other embodiments as well.

Abstract: The present disclosure provides a vertical cavity surface emitting laser, an electronic device with the same, and a manufacturing method for the same. The vertical cavity surface emitting laser includes a substrate layer, a first electrode layer, a first reflector layer, an active layer, an oxide layer, a second reflector layer, a second electrode layer, and a passivation layer, wherein the oxide layer includes a wedge-shaped structure on which an oxide aperture is formed, and the thickness of the center of the wedge-shaped structure is smaller than the thickness of its outer sides. The vertical cavity surface emitting laser provided by the present disclosure can play roles in reducing the photon scattering loss, reducing the parasitic capacitance, and increasing the modulation bandwidth of the laser.

Abstract: The present disclosure relates to a calculation method for predicting a proppant embedding depth based on a shale softening effect, including determining a spontaneous imbibition depth-soaking time curve; determining a Young’s modulus-soaking time curve of core surfaces; establishing a proppant embedding model containing a softened layer by a finite element method; conducting a numerical simulation to obtain an embedding volume-soaking time curve; and obtaining a calculation formula for a proppant embedding volume considering a softening effect.

Abstract: The present invention is directed to electrical circuits and methods. According to a specific embodiment, the present invention provides a voltage compensation mechanism for one or more single-phone avalanche diodes (SPADs). A reference voltage is generated based at least on an operating voltage of the SPADs. The reference voltage is coupled to a charge pump that generates a compensation voltage for the diodes. There are other embodiments as well.

Abstract: Low power combustible gas sensors using a thermocouple design are provided. In one aspect, a combustible gas sensor includes: at least one first electrode; at least one second electrode formed from a dissimilar material from the first electrode; and a catalytic material at an active reaction junction between the first electrode and the second electrode, wherein the active reaction junction between the first electrode and the second electrode forms a thermocouple. A sensing device is including, e.g., multiple sensors, and a method for sensing combustible gas using the present sensors are also provided.

Abstract: A method of forming a strained channel for a field effect transistor, including forming a sacrificial layer on a substrate, forming a channel layer on the sacrificial layer, forming a stressor layer on the channel layer, wherein the stressor layer applies a stress to the channel layer, forming at least one etching trench by removing at least a portion of the stressor layer, channel layer, and sacrificial layer, wherein the etching trench exposes at least a portion of a sidewall of the sacrificial layer, and separates the stressor layer, channel layer, and sacrificial layer into two or more stressor islands, channel blocks, and sacrificial slabs, and removing the sacrificial slabs to release the channel blocks from the substrate using a selective etch, wherein the channel blocks adhere to the substrate surface.

Abstract: Low power combustible gas sensors using a thermocouple design are provided. In one aspect, a combustible gas sensor includes: at least one first electrode; at least one second electrode formed from a dissimilar material from the first electrode; and a catalytic material at an active reaction junction between the first electrode and the second electrode, wherein the active reaction junction between the first electrode and the second electrode forms a thermocouple. A sensing device is including, e.g., multiple sensors, and a method for sensing combustible gas using the present sensors are also provided.

Abstract: A method of forming a strained channel for a field effect transistor, including forming a sacrificial layer on a substrate, forming a channel layer on the sacrificial layer, forming a stressor layer on the channel layer, wherein the stressor layer applies a stress to the channel layer, forming at least one etching trench by removing at least a portion of the stressor layer, channel layer, and sacrificial layer, wherein the etching trench exposes at least a portion of a sidewall of the sacrificial layer, and separates the stressor layer, channel layer, and sacrificial layer into two or more stressor islands, channel blocks, and sacrificial slabs, and removing the sacrificial slabs to release the channel blocks from the substrate using a selective etch, wherein the channel blocks adhere to the substrate surface.

Abstract: A method of forming a strained channel for a field effect transistor, including forming a sacrificial layer on a substrate, forming a channel layer on the sacrificial layer, forming a stressor layer on the channel layer, wherein the stressor layer applies a stress to the channel layer, forming at least one etching trench by removing at least a portion of the stressor layer, channel layer, and sacrificial layer, wherein the etching trench exposes at least a portion of a sidewall of the sacrificial layer, and separates the stressor layer, channel layer, and sacrificial layer into two or more stressor islands, channel blocks, and sacrificial slabs, and removing the sacrificial slabs to release the channel blocks from the substrate using a selective etch, wherein the channel blocks adhere to the substrate surface.

Abstract: Systems, devices, and methods are provided for detecting and measuring the concentration of non-reactive gases in a given environment, without having to increase the reactivity of the non-reactive gases through thermal heating. For example, a gas sensor device includes a sensing chamber, a chemical getter element disposed in the sensing chamber, and a pressure sensor device. The sensing chamber is configured to capture a gas sample. The chemical getter element is configured to remove reactive gas species of the gas sample through chemical reaction of the reactive gas species with the chemical getter element at room temperature. The pressure sensor device is configured to measure a pressure of non-reactive gas species of the gas sample, which remains in the sensing chamber after removal of the reactive gas species from the sensing chamber. The pressure measurement is used to determine an amount of the non-reactive gas species present in the sample.

Abstract: A method of forming a strained channel for a field effect transistor, including forming a sacrificial layer on a substrate, forming a channel layer on the sacrificial layer, forming a stressor layer on the channel layer, wherein the stressor layer applies a stress to the channel layer, forming at least one etching trench by removing at least a portion of the stressor layer, channel layer, and sacrificial layer, wherein the etching trench exposes at least a portion of a sidewall of the sacrificial layer, and separates the stressor layer, channel layer, and sacrificial layer into two or more stressor islands, channel blocks, and sacrificial slabs, and removing the sacrificial slabs to release the channel blocks from the substrate using a selective etch, wherein the channel blocks adhere to the substrate surface.

Abstract: A heat-assisted magnetic recording (HAMR) media stack is provided in which Iridium (Ir)-based materials may be utilized as a secondary underlayer instead of a Magnesium Oxide (MgO) underlayer utilized in conventional media stacks. Such Ir-based materials may include, e.g., pure Ir, Ir-based alloys, Ir-based compounds, as well as a granular Ir layer with segregants. The use of Ir or Ir-based materials as an underlayer provide advantages over the use of MgO as an underlayer. For example, DC sputtering can be utilized to deposit the layers of the media stack, where the deposition rate of Ir is considerably higher than that of MgO resulting in higher manufacturing production yields. Further still, less particles are generated during Ir-based layer deposition processes, and Ir-based underlayer can act as a better heat sink. Further still, the morphology and structure of a recording layer deposited on an Ir-based layer can be better controlled.

Abstract: A method of forming a strained channel for a field effect transistor, including forming a sacrificial layer on a substrate, forming a channel layer on the sacrificial layer, forming a stressor layer on the channel layer, wherein the stressor layer applies a stress to the channel layer, forming at least one etching trench by removing at least a portion of the stressor layer, channel layer, and sacrificial layer, wherein the etching trench exposes at least a portion of a sidewall of the sacrificial layer, and separates the stressor layer, channel layer, and sacrificial layer into two or more stressor islands, channel blocks, and sacrificial slabs, and removing the sacrificial slabs to release the channel blocks from the substrate using a selective etch, wherein the channel blocks adhere to the substrate surface.

Abstract: Systems, devices, and methods are provided for detecting and measuring the concentration of non-reactive gases in a given environment, without having to increase the reactivity of the non-reactive gases through thermal heating. For example, a gas sensor device includes a sensing chamber, a chemical getter element disposed in the sensing chamber, and a pressure sensor device. The sensing chamber is configured to capture a gas sample. The chemical getter element is configured to remove reactive gas species of the gas sample through chemical reaction of the reactive gas species with the chemical getter element at room temperature. The pressure sensor device is configured to measure a pressure of non-reactive gas species of the gas sample, which remains in the sensing chamber after removal of the reactive gas species from the sensing chamber. The pressure measurement is used to determine an amount of the non-reactive gas species present in the sample.

Abstract: A heat-assisted magnetic recording (HAMR) media stack is provided in which Iridium (Ir)-based materials may be utilized as a secondary underlayer instead of a Magnesium Oxide (MgO) underlayer utilized in conventional media stacks. Such Ir-based materials may include, e.g., pure Ir, Ir-based alloys, Ir-based compounds, as well as a granular Ir layer with segregants. The use of Ir or Ir-based materials as an underlayer provide advantages over the use of MgO as an underlayer. For example, DC sputtering can be utilized to deposit the layers of the media stack, where the deposition rate of Ir is considerably higher than that of MgO resulting in higher manufacturing production yields. Further still, less particles are generated during Ir-based layer deposition processes, and Ir-based underlayer can act as a better heat sink. Further still, the morphology and structure of a recording layer deposited on an Ir-based layer can be better controlled.

Abstract: The present invention describes novel dyes, including coumarins, rhodamines, and rhodols that incorporate additional fused aromatic rings. The dyes of the invention absorb at a longer wavelength than structurally similar dyes that do not possess the fused aromatic rings. Many of the dyes of the invention are useful fluorescent dyes. The invention includes chemically reactive dyes, dye-conjugates, and the use of such dyes in staining samples and detecting ligands or other analytes.

Abstract: The present invention describes novel dyes, including coumarins, rhodamines, and rhodols that incorporate additional fused aromatic rings. The dyes of the invention absorb at a longer wavelength than structurally similar dyes that do not possess the fused aromatic rings. Many of the dyes of the invention are useful fluorescent dyes. The invention includes chemically reactive dyes, dye-conjugates, and the use of such dyes in staining samples and detecting ligands or other analytes.