Abstract: A composite solution for enhancing induced disease resistance of lentinan (LNT) to a plant, a preparation method of the composite solution, and a method for enhancing induced disease resistance of LNT to a plant are provided. The composite solution for enhancing induced disease resistance of LNT to a plant includes: an LNT-containing solution and an SPc-containing solution, where SPc is a dendritic macromolecule functionalized by an amino functional group, and has a structural formula shown in formula I, where n=1 to 100. An LNT/SPc complex is produced in the composite solution. SPc spontaneously combines with LNT through hydrogen bonding, such that an agglomerate structure formed by LNT in an aqueous solution is broken and reduced to a nano-scale particle size, and a spherical particle is produced, which can significantly reduce a contact angle of the LNT aqueous solution, and promote the distribution and diffusion of LNT.

Abstract: A touch substrate manufacturing method, for manufacturing a target touch substrate to be assembled with a display substrate, is provided. A size of an active display region of the display substrate is a first preset size. The method includes: providing a touch substrate to be processed having a second preset size, the second preset size being greater than the first preset size; and cutting, in at least one cutting direction, the touch substrate to be processed to obtain the target touch substrate, the cutting direction being parallel to an extending direction of a touch channel on the touch substrate to be processed. A manufacturing method for touch module, a touch substrate and a touch module are also provided.

Abstract: Methods and computer systems for storing a query plan in a cache are provided. The method can include: determining a use frequency of the query plan; determining a target storage layer for storing the query plan based on the determined use frequency, wherein the cache includes at least two storage layers and each of the storage layers is associated with a compression level of query plans; processing the query plan according to the compression level of the target storage layer; and storing the processed query plan in the target storage layer.

Abstract: The present disclosure provides a system and method for temperature measurement. The method may include obtaining a thermal image of an object acquired by a thermal imaging device; identifying, in the thermal image, a first portion of the thermal image corresponding to a first target region of the object; determining, based on the first portion of the thermal image, a highest temperature of the first target region of the object; determining a target position in the first target region of the object, the target position being associated with the highest temperature; and marking, in a target image associated with the object, the target position.

Abstract: A method for temperature measurement may be provided. The method may include obtaining an image of an object acquired by an imaging device. The method may also include determining an angle between the object and the imaging device based on the image. The angle may be defined by a reference direction and a direction that the object is facing. The method may further include determining a temperature of the object in response to determining that the angle satisfies a condition based on the image.

Abstract: The present disclosure relates to systems and methods for processing infrared data. The methods may include obtaining one or more raw infrared data frames related to a target object. Each of the one or more raw infrared data frames may include raw infrared data including raw temperature information and raw grayscale information of the target object. The methods may further include generating one or more target infrared data frames corresponding to the one or more raw infrared data frames based on the raw infrared data. Each of the one or more target infrared data frames may include a frame header, an information header, and a data area. And for at least one of the one or more target infrared data frames, the data area may include substantially complete raw temperature information and substantially complete raw grayscale information.

Abstract: Provided is a method and apparatus for determining a signal coding mode. The signal coding mode may be determined or changed according to whether a current frame corresponds to a silence period and by using a history of speech or music presence possibilities.

Abstract: A circuit includes a supply voltage node having a supply voltage value and a node having a node voltage, the node voltage having a node voltage value higher than the supply voltage value. A current generating circuit is coupled between the supply voltage node and the node and is configured to generate a current, and a tracking circuit electrically coupled to the node is configured to selectively supply the current to the node based on the node voltage.

Abstract: Provided is a method and apparatus for determining a signal coding mode. The signal coding mode may be determined or changed according to whether a current frame corresponds to a silence period and by using a history of speech or music presence possibilities.

Abstract: Provided is a method and apparatus for determining a signal coding mode. The signal coding mode may be determined or changed according to whether a current frame corresponds to a silence period and by using a history of speech or music presence possibilities.

Abstract: Provided is a method and apparatus for determining a signal coding mode. The signal coding mode may be determined or changed according to whether a current frame corresponds to a silence period and by using a history of speech or music presence possibilities.

Abstract: A molding package assembly is provided, which includes a substrate and first and second molding packages stacked on the substrate. Each of the first and second molding packages has a semiconductor element, an anti-warping structure disposed around a periphery of the semiconductor element, a molding material encapsulating the semiconductor element and the anti-warping structure, and a protection layer formed on the semiconductor element, the molding material and the anti-warping structure. The anti-warping structure facilitates to prevent warping of the molding package assembly during a molding process.

Abstract: A circuit includes a supply voltage node having a supply voltage value and a node having a node voltage, the node voltage having a node voltage value higher than the supply voltage value. A current generating circuit is coupled between the supply voltage node and the node and is configured to generate a current, and a tracking circuit electrically coupled to the node is configured to selectively supply the current to the node based on the node voltage.

Abstract: A circuit includes a switching circuit, a node, and a tracking circuit. The switching circuit has a first terminal, a second terminal, and a third terminal. The node has a node voltage. The tracking circuit is electrically coupled to the third terminal and the node, and configured to receive the node voltage and generate a control voltage at the third terminal based on the node voltage.

Abstract: A molding package assembly is provided, which includes a substrate and first and second molding packages stacked on the substrate. Each of the first and second molding packages has a semiconductor element, an anti-warping structure disposed around a periphery of the semiconductor element, a molding material encapsulating the semiconductor element and the anti-warping structure, and a protection layer formed on the semiconductor element, the molding material and the anti-warping structure. The anti-warping structure facilitates to prevent warping of the molding package assembly during a molding process.

Abstract: A bump structure includes a substrate, a pad, an electrode and a protruding electrode. The pad is disposed on the substrate. The electrode is formed by a first metal material and disposed on the pad. The protruding electrode is formed by a second metal material and disposed on the electrode, wherein a cross-sectional area of the protruding electrode is less than a cross-sectional area of the electrode.

Abstract: A voltage swing decomposition circuit includes first and second clamp circuits and a protection circuit. The first clamp circuit is configured to clamp an output node of the first clamp circuit at a first voltage level when an input node of the voltage swing decomposition circuit has a voltage higher than the first voltage level. The second clamp circuit is configured to clamp an output node of the second clamp circuit at a second voltage level, higher than the first level, when the voltage of the input node is lower than the second voltage level. The protection circuit is coupled to the output nodes of the first and second clamp circuits, and is configured to selectively set an output node of the protection circuit to the first or second voltage level. The first and second clamp circuits are coupled together by the output node of the protection circuit.

Abstract: A squelch detector includes a first circuit, a second circuit, and a comparator. The first circuit is configured to receive a first pair of differential input signals and in response output a second pair of differential signals. The second pair of differential signals have higher voltages than the first pair of differential input signals. The second circuit is coupled to the first circuit and is configured to extract first and second voltage levels from the second pair of differential signals. The comparator is configured to output a squelch level signal based on a comparison of the first voltage level and a third voltage level. The third voltage level is based on the second voltage level and a reference voltage.

Abstract: A D flip-flop includes a first switch, a level shifter, and a second switch therein. The first switch includes a first input and a first output. The level shifter includes a second input coupled to the first input, and a second output. The second switch includes a third input coupled to the second output, and a third output. The first input and the third output form an input and an output of the D flip-flop.