Abstract: A multi-channel video recording method comprises: starting, by an electronic device, a camera; acquiring images by using a first camera lens and a second camera lens in a plurality of camera lenses; displaying a preview interface, where the preview interface includes a first image and a second image; the first image is an image acquired by the first camera lens, the second image is from the second camera lens, and the second image corresponds to a central area of an image acquired by the second camera lens; and the first image is located in a first area in the preview interface, and the second image is located in a second area in the preview interface; starting video recording after detecting a video recording instruction operation of a user; and displaying a shooting screen, where the shooting screen includes the first area and the second area.

Abstract: A recording frame rate control method includes a mobile terminal starts video recording and collects N video frames of a photographing scenario at a first frame rate. The mobile terminal determines light intensity in the photographing scenario based on the N video frames, and adjusts a recording frame rate of the mobile terminal based on the light intensity in the photographing scenario.

Abstract: A multi-channel video recording method comprises: starting, by an electronic device, a camera; acquiring images by using a first camera lens and a second camera lens in a plurality of camera lenses; displaying a preview interface, where the preview interface includes a first image and a second image; the first image is an image acquired by the first camera lens, the second image is from the second camera lens, and the second image corresponds to a central area of an image acquired by the second camera lens; and the first image is located in a first area in the preview interface, and the second image is located in a second area in the preview interface; starting video recording after detecting a video recording instruction operation of a user; and displaying a shooting screen, where the shooting screen includes the first area and the second area.

Abstract: This application provides a photographing method and an electronic device, and relates to the field of terminal technologies, to ensure stabilization performance existing during photographing in a zoom scenario, and improve definition of a photographing image. The method includes: obtaining a first photographing image through a first camera; determining a first crop ratio of the first photographing image based on a first zoom ratio of the first photographing image; cropping the first photographing image based on the first crop ratio; obtaining a second photographing image through the first camera in response to a first zoom operation; and cropping the second photographing image based on the second crop ratio; wherein the second crop ratio is greater than the first crop ratio, and a stabilization angle of the second photographing image is a product of the FOV of the first camera and the second crop ratio.

Abstract: This application provides a photographing method and an electronic device, and relates to the field of terminal technologies, to ensure stabilization performance existing during photographing in a zoom scenario, and improve definition of a photographing image. The method includes: obtaining a first photographing image through a first camera; determining a first crop_ratio of the first photographing image based on a first zoom ratio of the first photographing image; cropping the first photographing image based on the first crop_ratio; obtaining a second photographing image through the first camera in response to a first zoom operation; and cropping the second photographing image based on the second crop_ratio; wherein the second crop_ratio is greater than the first crop_ratio, and a stabilization angle of the second photographing image is a product of the FOV of the first camera and the second crop_ratio.

Abstract: A camera lens comprises a lens barrel, a front lens group disposed inside the lens barrel and proximate to an object side, a rear lens group disposed inside the lens barrel and proximate to an image side and comprises a first lens proximate to the image side, the first lens comprising a first optically effective part comprising a first outer edge, an effective aperture region comprising a second outer edge, and a first cutting edge, and a first non-optically effective part disposed around the first outer edge and comprises a first non-effective region disposed along the second outer edge, a second non-effective region disposed along the first cutting edge and comprising a third outer edge, and a second cutting edge on the third outer edge, and a cutting surface on the first outer side wall, proximate to the rear lens group, and faces the second cutting edge surface.

Abstract: A recording frame rate control method includes a mobile terminal starts video recording and collects N video frames of a photographing scenario at a first frame rate. The mobile terminal determines light intensity in the photographing scenario based on the N video frames, and adjusts a recording frame rate of the mobile terminal based on the light intensity in the photographing scenario.

Abstract: A multi-channel video recording method comprises: starting, by an electronic device, a camera; acquiring images by using a first camera lens and a second camera lens in a plurality of camera lenses; displaying a preview interface, where the preview interface includes a first image and a second image; the first image is an image acquired by the first camera lens, the second image is from the second camera lens, and the second image corresponds to a central area of an image acquired by the second camera lens; and the first image is located in a first area in the preview interface, and the second image is located in a second area in the preview interface; starting video recording after detecting a video recording instruction operation of a user; and displaying a shooting screen, where the shooting screen includes the first area and the second area.

Abstract: A method includes obtaining a first image of a to-be-photographed object based on an input received by way of a user interface, the first image being obtained using a terminal having a lens in a first position. The method also includes detecting a moiré pattern on the first image. The method further includes automatically moving the lens from the first position to a second position on a plane perpendicular to an optical axis of the lens. The method additionally includes obtaining at least one second image of the to-be-photographed object one or more of with the lens in the second position or between the first position and the second position. The method also includes restoring a detected moiré pattern region of the first image based on the at least one second image to generate a restored image. The method further includes outputting the restored image to a display.

Abstract: An image photographing method applied to a terminal, and a terminal device are provided, to alleviate impact of a moiré pattern on quality of a photographed image. The method includes: obtaining, by the terminal device, a first image of a to-be-photographed object; moving a lens of the terminal device when it is determined that there is a moiré pattern on the first image, and obtaining at least one second image of the to-be-photographed object in a process of moving the lens; and restoring a moiré pattern region of the first image based on the at least one second image, and outputting a restored image.

Abstract: The invention discloses an image sensor (100) and a method of fabricating the image sensor. The image sensor (100) includes: a substrate (101) with a metal interconnection layer (102) formed on a first side thereof; a first type of doped area (103) located in the substrate (101); a second type of doped area (105) located in the substrate (101) adjacent to the first type of doped area (103) to form a photoelectric diode; an electrode layer (107) located on a second side of the substrate (101), wherein the electrode layer (107) is light-transmissive; and an insulation layer (109) located between the electrode layer (107) and the substrate (101); wherein there is a predetermined potential difference between the electrode layer (107) and the substrate (101) such that a second type of conductive layer (111) is generated on the surface of the second side of the substrate (101).

Abstract: An image sensor includes an array of photo-sensing regions formed in a semiconductor substrate, a dielectric layer over the array of photo-sensing regions, and an array of microlenses formed in the dielectric layer. Each of the microlenses is center-aligned over one of the photo-sensing regions and has a truncated plano-convex shape. The microlenses have an index of refraction that is higher than the dielectric layer's refraction index. Each of the microlenses has a smooth circular top, a flat circular bottom, and a curved circumferential side convex towards the semiconductor substrate.

Abstract: A method for fabricating CMOS image sensor device includes providing a P-type semiconductor substrate. The semiconductor substrate includes a surface region. The method includes forming a first dielectric layer having a first thickness overlying a first region of the semiconductor substrate. The method includes providing an N type impurity region in a portion of the semiconductor substrate underneath the first dielectric layer to cause formation of a photodiode device region characterized by at least the N type impurity region and the P type substrate. A second dielectric layer having a second thickness is formed in a second region of the surface region. The second dielectric layer is formed within a portion of the first region within the first thickness of the first dielectric layer. The method includes forming a polysilicon gate layer overlying at least the second region to form a contact member coupled to the second region.

Abstract: A method of forming a CMOS image sensor device. The method includes providing a semiconductor substrate having a P-type impurity characteristic. The semiconductor substrate includes a surface region. The method includes forming a gate oxide layer overlying the surface region and forming a first gate structure overlying a first portion of the gate oxide layer, the first gate structure has a top surface region and at least a side region. The method forms an N-type impurity region in a portion of the semiconductor substrate to form a photodiode device region from the N-type impurity region and the P-type impurity. The method includes forming a blanket spacer layer including an oxide on nitride on oxide structure overlying at least the first gate structure; and forming one or more spacer structures using the blanket spacer layer for the first gate structure while maintaining a portion of the oxide layer from the oxide on nitride on oxide overlying at least the photo-diode device region.

Abstract: A method of forming a CMOS image sensor device includes providing a semiconductor substrate having a P-type impurity characteristic. The semiconductor substrate includes a surface region. The method forms a gate oxide overlying the surface region and forms an N type region in a portion of the semiconductor substrate. The method forms a photodiode device region from at least the N-type region. The method forms a first gate structure and multiple second gate structures overlying the gate oxide layer. The method forms a blanket spacer layer overlying the first gate structure and the second gate structures. A protective layer is formed overlying the photodiode device region and a portion of the third gate structure. The method forms one or more spacer structures using the blanket spacer structure while maintaining the protective layer overlying at least the photodiode region.

Abstract: A method of making an embedded microlens includes providing a substrate having a photo-sensing region, forming a dielectric film overlying the substrate, forming a mask having a circular opening over the dielectric film, the opening being center-aligned over the photo-sensing region, and etching the dielectric film to form a cavity under the mask by introducing an isotropic etchant through the opening, the cavity being characterized by a truncated plano-convex shape having a flat circular bottom and curved peripheral sides convex towards the dielectric film. The method further includes removing the mask, depositing a lens material with a higher refractive index than that of the dielectric film to fill the cavity, planarizing the lens material to form the embedded microlens in the cavity having a smooth top surface, and forming a color filter layer overlying the microlens. The dielectric film includes silicon dioxide having a refractive index of 1.5 or less.

Abstract: A method of forming a CMOS image sensor device, the method includes providing a semiconductor substrate having a P-type impurity characteristic including a surface region. The method forma first thickness of silicon dioxide in a first region of the surface region, a second thickness of silicon dioxide in a second region of the surface region, and a third thickness of silicon dioxide in a third region of the surface region. The method includes forming a first gate layer overlying the second region and a second gate layer overlying the third region, while exposing a portion of the first thickness of silicon dioxide. An N-type impurity characteristic is formed within a region within a vicinity underlying the first thickness of silicon dioxide in the first region of the surface region to cause formation of a photo diode device characterized by the N-type impurity region and the P-type substrate.

Abstract: The present invention provides a method for fabricating a pixel cell of CMOS image sensor, comprising: preparing a semiconductor substrate divided into region I and region II; forming an insulation layer on the surface of the semiconductor substrate in the region I and a gate dielectric layer on the surface of the semiconductor substrate in the region II; forming a poly-silicon gate on the surface of the semiconductor substrate in the region II; forming a deep doped well in the region I through an ion implantation with high energy; performing an ion implantation with low energy in the region I and an ion implantation for lightly doped source/drain in the region II simultaneously; and forming source/drain regions in the semiconductor substrate in the region II.

Abstract: Techniques for manufacturing a CMOS image sensor are provided. A semiconductor substrate is provided, and at least one isolation region can be formed between a periphery region of the substrate and a photo-sensing region of the substrate. A first well in the periphery region and a second well in the photo-sensing region of the substrate are formed. A third well associated with a photodiode is also formed. A gate oxide layer, polysilicon layer, and first metal layer are respectively deposited. The polysilicon layer and first metal layer are etched to form an least one gate in the photo-sensing region and at least one gate in the periphery region. At least two doped regions in the first well are formed, as well as a doped region in the second well. A silicide block layer is deposited over the photo-sensing region of the substrate. A second metal layer is deposited at least over the periphery region after deposition of the silicide block. The substrate is exposed to a thermal environment to form silicide.

Abstract: A method for fabricating CMOS image sensor device, the method includes providing a semiconductor substrate having a P type impurity characteristic. The semiconductor substrate includes a surface region. The method forms a first dielectric layer having a first thickness overlying a first region of the semiconductor substrate. The method includes providing a N type impurity region in a portion of the semiconductor substrate underneath the first dielectric layer to cause formation of a photodiode device region characterized by at least the N type impurity region and the P type substrate. A second dielectric layer having a second thickness is formed in a second region of the surface region. The second dielectric layer is formed within a portion of the first region within the first thickness of the first dielectric layer. The method forms a polysilicon gate layer overlying at least the second region to form a contact member coupled to the second region.