Patents by Inventor Jih-Ming TU

Jih-Ming TU has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Light-emitting device
    Patent number: 10811564
    Abstract: A light-emitting device is provided. The light-emitting device comprises The light-emitting device comprises a light-emitting stack comprising a first semiconductor layer, a second semiconductor layer and an active layer between the first semiconductor layer and the second semiconductor layer; and a third semiconductor layer on the light-emitting stack and comprising a first sub-layer, a second sub-layer and a roughened surface, wherein the first sub-layer has the same composition as that of the second sub-layer, and the second sub-layer is farther from the light-emitting stack than the first sub-layer; wherein the first sub-layer and the second sub-layer each comprises a Group III element and a Group V element, and an atomic ratio of the Group III element to the Group V element of the first sub-layer is less than an atomic ratio of the Group III element to the Group V element of the second sub-layer.
    Type: Grant
    Filed: January 14, 2019
    Date of Patent: October 20, 2020
    Assignee: EPISTAR CORPORATION
    Inventors: Kuo-Feng Huang, Cheng-Hsing Chiang, Jih-Ming Tu
  • LIGHT-EMITTING DEVICE
    Publication number: 20190148591
    Abstract: A light-emitting device is provided. The light-emitting device comprises The light-emitting device comprises a light-emitting stack comprising a first semiconductor layer, a second semiconductor layer and an active layer between the first semiconductor layer and the second semiconductor layer; and a third semiconductor layer on the light-emitting stack and comprising a first sub-layer, a second sub-layer and a roughened surface, wherein the first sub-layer has the same composition as that of the second sub-layer, and the second sub-layer is farther from the light-emitting stack than the first sub-layer; wherein the first sub-layer and the second sub-layer each comprises a Group III element and a Group V element, and an atomic ratio of the Group III element to the Group V element of the first sub-layer is less than an atomic ratio of the Group III element to the Group V element of the second sub-layer.
    Type: Application
    Filed: January 14, 2019
    Publication date: May 16, 2019
    Inventors: Kuo-Feng HUANG, Cheng-Hsing CHIANG, Jih-Ming TU
  • Light-emitting device
    Patent number: 10199541
    Abstract: A light-emitting device is provided. The light-emitting device comprises The light-emitting device comprises a light-emitting stack comprising a first semiconductor layer, a second semiconductor layer and an active layer between the first semiconductor layer and the second semiconductor layer; and a third semiconductor layer on the light-emitting stack and comprising a first sub-layer, a second sub-layer and a roughened surface, wherein the first sub-layer has the same composition as that of the second sub-layer, and the second sub-layer is farther from the light-emitting stack than the first sub-layer; wherein the first sub-layer and the second sub-layer each comprises a Group III element and a Group V element, and an atomic ratio of the Group III element to the Group V element of the first sub-layer is less than an atomic ratio of the Group III element to the Group V element of the second sub-layer.
    Type: Grant
    Filed: October 2, 2017
    Date of Patent: February 5, 2019
    Assignee: EPISTAR CORPORATION
    Inventors: Kuo-Feng Huang, Cheng-Hsing Chiang, Jih-Ming Tu
  • LIGHT-EMITTING DEVICE
    Publication number: 20180026158
    Abstract: A light-emitting device is provided. The light-emitting device comprises The light-emitting device comprises a light-emitting stack comprising a first semiconductor layer, a second semiconductor layer and an active layer between the first semiconductor layer and the second semiconductor layer; and a third semiconductor layer on the light-emitting stack and comprising a first sub-layer, a second sub-layer and a roughened surface, wherein the first sub-layer has the same composition as that of the second sub-layer, and the second sub-layer is farther from the light-emitting stack than the first sub-layer; wherein the first sub-layer and the second sub-layer each comprises a Group III element and a Group V element, and an atomic ratio of the Group III element to the Group V element of the first sub-layer is less than an atomic ratio of the Group III element to the Group V element of the second sub-layer.
    Type: Application
    Filed: October 2, 2017
    Publication date: January 25, 2018
    Inventors: Kuo-Feng HUANG, Cheng-Hsing CHIANG, Jih-Ming TU
  • Light-emitting device
    Patent number: 9847454
    Abstract: A light-emitting device is provided. The light-emitting device comprises a light-emitting stack comprising a first semiconductor layer, a second semiconductor layer and an active layer between the first semiconductor layer and the second semiconductor layer. The light-emitting device further comprises a third semiconductor layer on the light-emitting stack and comprising a first sub-layer, a second sub-layer and a roughened surface, wherein the first sub-layer has the same composition as that of the second sub-layer, and the composition of the first sub-layer is with a different atomic ratio from that of the second sub-layer. A method for manufacturing the light-emitting device is also provided.
    Type: Grant
    Filed: October 2, 2015
    Date of Patent: December 19, 2017
    Assignee: EPISTAR CORPORATION
    Inventors: Kuo-Feng Huang, Cheng-Hsing Chiang, Jih-Ming Tu
  • LIGHT-EMITTING DEVICE
    Publication number: 20170098735
    Abstract: A light-emitting device is provided. The light-emitting device comprises a light-emitting stack comprising a first semiconductor layer, a second semiconductor layer and an active layer between the first semiconductor layer and the second semiconductor layer. The light-emitting device further comprises a third semiconductor layer on the light-emitting stack and comprising a first sub-layer, a second sub-layer and a roughened surface, wherein the first sub-layer has the same composition as that of the second sub-layer, and the composition of the first sub-layer is with a different atomic ratio from that of the second sub-layer. A method for manufacturing the light-emitting device is also provided.
    Type: Application
    Filed: October 2, 2015
    Publication date: April 6, 2017
    Inventors: Kuo-Feng HUANG, Cheng-Hsing CHIANG, Jih-Ming TU