Patents by Inventor Jihwan Ahn

Jihwan Ahn has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240196617
    Abstract: A semiconductor device includes a substrate comprising a chip region and a scribe lane region including a first key pattern region, a capping insulating layer disposed on the scribe lane region, a barrier metal layer covering the capping insulating layer and an inner wall of a via hole penetrating the capping insulating layer, a substrate layer disposed on the barrier metal layer and filling the via hole, an insulating plate and an upper base layer disposed on the substrate layer, a pattern insulating layer disposed on the capping insulating layer in the first key pattern region, a stacked structure disposed on the upper base layer and the pattern insulating layer, and first pattern structures overlapping the pattern insulating layer in a vertical direction and penetrating the stacked structure and the pattern insulating layer, wherein the pattern insulating layer extends through the barrier metal layer in the first key pattern region.
    Type: Application
    Filed: November 16, 2023
    Publication date: June 13, 2024
    Inventors: Seungmin Lee, Jihwan Yu, Byungman Ahn, Bonghyun Choi
  • Patent number: 11974838
    Abstract: An electronic device may include a PPG sensor including a light emitter that applies a current in a specified range and emits a light signal corresponding to the current and a light detector that amplifies a received light signal by applying one of a plurality of gain values, a memory that stores a plurality of sets of PPG models corresponding to the plurality of gain values and including a current value and PPG level data corresponding to the current value, and at least one processor electrically connected to the PPG sensor and the memory.
    Type: Grant
    Filed: January 9, 2019
    Date of Patent: May 7, 2024
    Assignee: Samsung Electronics Co., Ltd
    Inventors: Hansung Lee, Hwan Shim, Yongjin Lee, Jooman Han, Jongho Park, Gahee Jung, Seounghun Kim, Jihwan Kim, Choonghee Ahn, Hyungjoon Lim, Jiwoon Jung, Jeongmin Park
  • Patent number: 9093753
    Abstract: An artificial magnetic conductor includes a conductor layer, a ground layer, and a via. The conductor layer is formed in a first direction and includes a plurality of grid cells. The ground layer is formed in a second direction that is opposite to the first direction and generates a lower frequency than that of an artificial magnetic conductor including a plurality of grid cells having the same size as that of the plurality of grid cells of the conductor layer and a conductor plate having a form that is not modified. The via is formed between the conductor layer and the ground layer to electrically connect the conductor layer and the ground layer.
    Type: Grant
    Filed: December 23, 2010
    Date of Patent: July 28, 2015
    Assignee: INDUSTRY-ACADEMIC COOPERATION FOUNDATION, YONSEI UNIVERSITY
    Inventors: Young Bae Jung, Soon Young Eom, Soon Ik Jeon, Young Joong Yoon, Jihwan Ahn, Ji Hwan Yoon
  • Publication number: 20110181490
    Abstract: An artificial magnetic conductor includes a conductor layer, a ground layer, and a via. The conductor layer is formed in a first direction and includes a plurality of grid cells. The ground layer is formed in a second direction that is opposite to the first direction and generates a lower frequency than that of an artificial magnetic conductor including a plurality of grid cells having the same size as that of the plurality of grid cells of the conductor layer and a conductor plate having a form that is not modified. The via is formed between the conductor layer and the ground layer to electrically connect the conductor layer and the ground layer.
    Type: Application
    Filed: December 23, 2010
    Publication date: July 28, 2011
    Applicants: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE, INDUSTRY-ACADEMIC COOPERATION FOUNDATION, YONSEI UNIVERSITY
    Inventors: Young Bae JUNG, Soon Young Eom, Soon Ik Jeon, Young Joong Yoon, Jihwan Ahn, Ji Hwan Yoon