Patents by Inventor Jiing-Fa Wen

Jiing-Fa Wen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Electronic devices with hybrid high-k dielectric and fabrication methods thereof
    Patent number: 7842946
    Abstract: Electronic devices with hybrid high-k dielectric and fabrication methods thereof. The electronic device includes a substrate. A first electrode is disposed on the substrate. Hybrid high-k multi-layers comprising a first dielectric layer and a second dielectric layer are disposed on the substrate, wherein the first dielectric layer and the second dielectric layer are solvable and substantially without interface therebetween. A second electrode is formed on the hybrid multi-layers.
    Type: Grant
    Filed: September 4, 2007
    Date of Patent: November 30, 2010
    Assignee: Industrial Technology Research Institute
    Inventors: Wei-Ling Lin, Jiing-Fa Wen, Wen-Hsi Lee, Tarng-Shiang Hu, Jiun-Jie Wang, Cheng-Chung Lee
  • ELECTRONIC DEVICES WITH HYBRID HIGH-K DIELECTRIC AND FABRICATION METHODS THEREOF
    Publication number: 20090087944
    Abstract: Electronic devices with hybrid high-k dielectric and fabrication methods thereof. The electronic device includes a substrate. A first electrode is disposed on the substrate. Hybrid high-k multi-layers comprising a first dielectric layer and a second dielectric layer are disposed on the substrate, wherein the first dielectric layer and the second dielectric layer are solvable and substantially without interface therebetween. A second electrode is formed on the hybrid multi-layers.
    Type: Application
    Filed: December 11, 2008
    Publication date: April 2, 2009
    Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
    Inventors: Wei-Ling Lin, Jiing-Fa Wen, Wen-Hsi Lee, Tarng-Shiang Hu, Jiun-Jie Wang, Cheng-Chung Lee
  • ELECTRONIC DEVICES WITH HYBRID HIGH-K DIELECTRIC AND FABRICATION METHODS THEREOF
    Publication number: 20080149922
    Abstract: Electronic devices with hybrid high-k dielectric and fabrication methods thereof. The electronic device includes a substrate. A first electrode is disposed on the substrate. Hybrid high-k multi-layers comprising a first dielectric layer and a second dielectric layer are disposed on the substrate, wherein the first dielectric layer and the second dielectric layer are solvable and substantially without interface therebetween. A second electrode is formed on the hybrid multi-layers.
    Type: Application
    Filed: September 4, 2007
    Publication date: June 26, 2008
    Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
    Inventors: Wei-Ling Lin, Jiing-Fa Wen, Wen-Hsi Lee, Tarng-Shiang Hu, Jiun-Jie Wang, Cheng-Chung Lee