Patents by Inventor Jim He

Jim He has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • APPARATUS FOR ETCHING HIGH ASPECT RATIO FEATURES
    Publication number: 20070256785
    Abstract: Embodiments of the invention provide a method and apparatus, such as a processing chamber, suitable for etching high aspect ratio features. Other embodiments include a showerhead assembly for use in the processing chamber. In one embodiment, a processing chamber includes a chamber body having a showerhead assembly and substrate support disposed therein. The showerhead assembly includes at least two fluidly isolated plenums, a region transmissive to an optical metrology signal, and a plurality of gas passages formed through the showerhead assembly fluidly coupling the plenums to the interior volume of the chamber body.
    Type: Application
    Filed: May 3, 2006
    Publication date: November 8, 2007
    Inventors: Sharma Pamarthy, Huutri Dao, Xiaoping Zhou, Kelly McDonough, Jivko Dinev, Farid Abooameri, David Gutierrez, Jim He, Robert Clark, Dennis Koosau, Jeffrey Dietz, Declan Scanlan, Subhash Deshmukh, John Holland, Alexander Paterson
  • TECHNIQUES FOR THE USE OF AMORPHOUS CARBON (APF) FOR VARIOUS ETCH AND LITHO INTEGRATION SCHEMES
    Publication number: 20060231524
    Abstract: A method of etching a substrate is provided. The method of etching a substrate includes transferring a pattern into the substrate using a double patterned amorphous carbon layer on the substrate as a hardmask. Optionally, a non-carbon based layer is deposited on the amorphous carbon layer as a capping layer before the pattern is transferred into the substrate.
    Type: Application
    Filed: June 2, 2006
    Publication date: October 19, 2006
    Inventors: Wei Liu, Jim He, Sang Ahn, Meihua Shen, Hichem M'Saad, Wendy Yeh, Christopher Bencher
  • Techniques for the use of amorphous carbon (APF) for various etch and litho integration scheme
    Publication number: 20050167394
    Abstract: A method of etching a substrate is provided. The method of etching a substrate includes transferring a pattern into the substrate using a double patterned amorphous carbon layer on the substrate as a hardmask. Optionally, a non-carbon based layer is deposited on the amorphous carbon layer as a capping layer before the pattern is transferred into the substrate.
    Type: Application
    Filed: January 30, 2004
    Publication date: August 4, 2005
    Inventors: Wei liu, Jim He, Sang Ahn, Meihua Shen, Hichem M'Saad, Wendy Yeh, Chistopher Bencher