Abstract: A method of fabricating a resist pattern for a gamma gate of high electron mobility transistors of gallium arsenide (GaAs) elements for high-speed data communication with low noise is disclosed. The method of fabricating the gamma gate according to the present invention includes the steps of forming a first resist pattern by coating a first resist on a GaAs substrate, and exposing, developing and baking the coated first resist, sequentially; and forming a second resist pattern by coating a second resist on the GaAs substrate and the first resist pattern. and exposing, developing and baking the coated second resist, sequentially. A portion of the GaAs substrate covered by the first and the second resist patterns defines a region that a footprint of the gamma gate is formed, and a portion of the GaAs substrate which is covered by the first resist pattern, but not covered by the second resist pattern defines a region that a head of the gamma gate is formed.