Patents by Inventor Jin Amanokura
Jin Amanokura has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 10796921Abstract: The CMP polishing liquid for polishing palladium of this invention comprises an organic solvent, 1,2,4-triazole, a phosphorus acid compound, an oxidizing agent and an abrasive. The substrate polishing method is a method for polishing a substrate with a polishing cloth while supplying a CMP polishing liquid between the substrate and the polishing cloth, wherein the substrate is a substrate with a palladium layer on the side facing the polishing cloth, and the CMP polishing liquid is a CMP polishing liquid comprising an organic solvent, 1,2,4-triazole, a phosphorus acid compound, an oxidizing agent and an abrasive.Type: GrantFiled: February 5, 2010Date of Patent: October 6, 2020Assignee: HITACHI CHEMICAL COMPANY, LTD.Inventors: Hisataka Minami, Ryouta Saisyo, Jin Amanokura, Yuuhei Okada, Hiroshi Ono
-
Patent number: 9799532Abstract: The CMP polishing liquid of the invention comprises a metal salt containing at least one type of metal selected from the group consisting of metals of Groups 8, 11, 12 and 13, 1,2,4-triazole, a phosphorus acid, an oxidizing agent and abrasive grains. The polishing method of the invention comprises a step of polishing at least a palladium layer with an abrasive cloth while supplying a CMP polishing liquid between the palladium layer of a substrate having the palladium layer and the abrasive cloth, wherein the CMP polishing liquid comprises a metal salt containing at least one type of metal selected from the group consisting of metals of Groups 8, 11, 12 and 13, 1,2,4-triazole, a phosphorus acid, an oxidizing agent and abrasive grains.Type: GrantFiled: January 4, 2011Date of Patent: October 24, 2017Assignee: HITACHI CHEMICAL COMPANY, LTD.Inventors: Hisataka Minami, Jin Amanokura, Sou Anzai
-
Patent number: 8821750Abstract: The present invention relates to a metal polishing slurry containing abrasive grains, a metal-oxide-dissolving agent, and water, wherein the abrasive grains contain two or more abrasive grain species different from each other in average secondary particle diameter. Using the metal polishing slurry of the present invention, a metal polishing slurry can be obtained which gives a large polishing rate of an interlayer dielectric layer, and is high in the flatness of the polished surface. This metal polishing slurry can provide suitable method for a semiconductor device which is excellent in being made finer and thinner and in dimension precision and in electric characteristics, is high in reliability, and can attain a decrease in costs.Type: GrantFiled: February 22, 2008Date of Patent: September 2, 2014Assignee: Hitachi Chemical Co., Ltd.Inventors: Jin Amanokura, Takafumi Sakurada, Sou Anzai, Takashi Shinoda, Shigeru Nobe
-
Publication number: 20140017893Abstract: Disclosed is a CMP polishing liquid for polishing a substrate having a layer containing ruthenium, comprising: an oxidizing agent; polishing particles; water; and a compound having a structure represented by the following Formula (1), or a salt thereof. This CMP liquid is improved in at least the polishing rate to a ruthenium layer when compared with conventional polishing liquid. Also disclosed is a method for polishing a substrate using such a CMP polishing liquid.Type: ApplicationFiled: September 18, 2013Publication date: January 16, 2014Applicant: Hitachi Chemical Company, Ltd.Inventors: Hisataka MINAMI, Hiroshi Ono, Jin Amanokura
-
Patent number: 8501625Abstract: The invention relates to a polishing liquid for metal film comprising 7.0% by weight or more of an oxidizer for metal, a water-soluble polymer, an oxidized metal dissolving agent, a metal anticorrosive agent and water, provided that the total amount of the polishing liquid for metal film is 100% by weight, wherein the water-soluble polymer has a weight average molecular weight of 150,000 or more and is at least one member selected from among a polycarboxylic acid, a salt of a polycarboxylic acid, and a polycarboxylic acid ester. According to the invention, provided is a polishing liquid for metal film, by which polishing can be performed at a high rate even under a polishing pressure as low as 1 psi or lower, and such that a polished film after polishing is excellent in planarity, furthermore, with which a high polishing rate can be obtained even in an initial stage of polishing, and provided is a polishing method using the polishing liquid.Type: GrantFiled: July 8, 2008Date of Patent: August 6, 2013Assignee: Hitachi Chemical Co., Ltd.Inventors: Kouji Haga, Masato Fukasawa, Jin Amanokura, Hiroshi Nakagawa
-
Patent number: 8481428Abstract: The present invention relates to polishing slurry and polishing method used for polishing in a process for forming wirings of a semiconductor device, and the like. There are provided polishing slurry giving a polished surface having high flatness even if the polished surface is made of two or more substances, and further, capable of suppressing metal residue and scratches after polishing, and a method of chemical mechanical polishing using this. The polishing slurry of the present invention is polishing slurry containing at least one of a surfactant and an organic solvent, and a metal oxide dissolving agent and water, or polishing slurry containing water and abrasive of which surface has been modified with an alkyl group, and preferably, it further contains a metal oxidizer, water-soluble polymer, and metal inhibitor.Type: GrantFiled: November 18, 2011Date of Patent: July 9, 2013Assignee: Hitachi Chemical Co., Ltd.Inventors: Jin Amanokura, Takafumi Sakurada, Sou Anzai, Masato Fukasawa, Shouichi Sasaki
-
Publication number: 20120238094Abstract: The CMP polishing liquid of the invention comprises a metal salt containing at least one type of metal selected from the group consisting of metals of Groups 8, 11, 12 and 13, 1,2,4-triazole, a phosphorus acid, an oxidizing agent and abrasive grains. The polishing method of the invention comprises a step of polishing at least a palladium layer with an abrasive cloth while supplying a CMP polishing liquid between the palladium layer of a substrate having the palladium layer and the abrasive cloth, wherein the CMP polishing liquid comprises a metal salt containing at least one type of metal selected from the group consisting of metals of Groups 8, 11, 12 and 13, 1,2,4-triazole, a phosphorus acid, an oxidizing agent and abrasive grains.Type: ApplicationFiled: January 4, 2011Publication date: September 20, 2012Applicant: Hitachi Chemical Company, Ltd.Inventors: Hisataka Minami, Jin Amanokura, Sou Anzai
-
Publication number: 20120100718Abstract: The CMP polishing liquid for polishing palladium of this invention comprises an organic solvent, 1,2,4-triazole, a phosphorus acid compound, an oxidizing agent and an abrasive. The substrate polishing method is a method for polishing a substrate with a polishing cloth while supplying a CMP polishing liquid between the substrate and the polishing cloth, wherein the substrate is a substrate with a palladium layer on the side facing the polishing cloth, and the CMP polishing liquid is a CMP polishing liquid comprising an organic solvent, 1,2,4-triazole, a phosphorus acid compound, an oxidizing agent and an abrasive.Type: ApplicationFiled: February 5, 2010Publication date: April 26, 2012Applicant: Hitachi Chemical Company, Ltd.Inventors: Hisataka Minami, Ryouta Saisyo, Jin Amanokura, Yuuhei Okada, Hiroshi Ono
-
Publication number: 20120064721Abstract: The present invention relates to polishing slurry and polishing method used for polishing in a process for forming wirings of a semiconductor device, and the like. There are provided polishing slurry giving a polished surface having high flatness even if the polished surface is made of two or more substances, and further, capable of suppressing metal residue and scratches after polishing, and a method of chemical mechanical polishing using this. The polishing slurry of the present invention is polishing slurry containing at least one of a surfactant and an organic solvent, and a metal oxide dissolving agent and water, or polishing slurry containing water and abrasive of which surface has been modified with an alkyl group, and preferably, it further contains a metal oxidizer, water-soluble polymer, and metal inhibitor.Type: ApplicationFiled: November 18, 2011Publication date: March 15, 2012Applicant: HITACHI CHEMICAL CO., LTD.Inventors: Jin Amanokura, Takafumi Sakurada, Sou Anzai, Masato Fukasawa, Shouichi Sasaki
-
Patent number: 8084362Abstract: The present invention relates to polishing slurry and polishing method used for polishing in a process for forming wirings of a semiconductor device, and the like. There are provided polishing slurry giving a polished surface having high flatness even if the polished surface is made of two or more substances, and further, capable of suppressing metal residue and scratches after polishing, and a method of chemical mechanical polishing using this. The polishing slurry of the present invention is polishing slurry containing at least one of a surfactant and an organic solvent, and a metal oxide dissolving agent and water, or polishing slurry containing water and abrasive, wherein the surface of the abrasive is modified with an alkyl group, and preferably, it further contains a metal oxidizer, water-soluble polymer, and metal inhibitor.Type: GrantFiled: May 25, 2007Date of Patent: December 27, 2011Assignee: Hitachi Chemical Co., Ltd.Inventors: Jin Amanokura, Takafumi Sakurada, Sou Anzai, Masato Fukasawa, Shouichi Sasaki
-
Patent number: 8084363Abstract: The present invention relates to polishing slurry and polishing method used for polishing in a process for forming wirings of a semiconductor device, and the like. There are provided polishing slurry giving a polished surface having high flatness even if the polished surface is made of two or more substances, and further, capable of suppressing metal residue and scratches after polishing, and a method of chemical mechanical polishing using this. The polishing slurry of the present invention is polishing slurry containing at least one of a surfactant and an organic solvent, and a metal oxide dissolving agent and water, or polishing slurry containing water and abrasive of which surface has been modified with an alkyl group, and preferably, it further contains a metal oxidizer, water-soluble polymer, and metal inhibitor.Type: GrantFiled: February 4, 2009Date of Patent: December 27, 2011Assignee: Hitachi Chemical Co., Ltd.Inventors: Jin Amanokura, Takafumi Sakurada, Sou Anzai, Masato Fukasawa, Shouichi Sasaki
-
Patent number: 7994058Abstract: The present invention relates to polishing slurry and polishing method used for polishing in a process for forming wirings of a semiconductor device, and the like. There are provided polishing slurry giving a polished surface having high flatness even if the polished surface is made of two or more substances, and further, capable of suppressing metal residue and scratches after polishing, and a method of chemical mechanical polishing using this. The polishing slurry of the present invention is polishing slurry containing at least one of a surfactant and an organic solvent, and a metal oxide dissolving agent and water, or polishing slurry containing water and abrasive, wherein the surface of the abrasive is modified with an alkyl group, and preferably, it further contains a metal oxidizer, water-soluble polymer, and metal inhibitor.Type: GrantFiled: May 25, 2007Date of Patent: August 9, 2011Assignee: Hitachi Chemical Co., Ltd.Inventors: Jin Amanokura, Takafumi Sakurada, Sou Anzai, Masato Fukasawa, Shouichi Sasaki
-
Publication number: 20110027997Abstract: The present invention can provide a polishing liquid for CMP having good dispersion stability and a high polishing rate in polishing of interlayer insulating films and a polishing method. Disclosed a polishing liquid for CMP comprising: a medium; and colloidal silica particles dispersed in the medium, a blending amount of the colloidal silica particles being 2.0 to 8.Type: ApplicationFiled: April 16, 2009Publication date: February 3, 2011Applicant: HITACHI CHEMICAL COMPANY, LTD.Inventors: Takashi Shinoda, Takaaki Tanaka, Mamiko Kanamaru, Jin Amanokura
-
Publication number: 20100323584Abstract: The invention relates to a polishing liquid for metal film comprising 7.0% by weight or more of an oxidizer for metal, a water-soluble polymer, an oxidized metal dissolving agent, a metal anticorrosive agent and water, provided that the total amount of the polishing liquid for metal film is 100% by weight, wherein the water-soluble polymer has a weight average molecular weight of 150,000 or more and is at least one member selected from among a polycarboxylic acid, a salt of a polycarboxylic acid, and a polycarboxylic acid ester. According to the invention, provided is a polishing liquid for metal film, by which polishing can be performed at a high rate even under a polishing pressure as low as 1 psi or lower, and such that a polished film after polishing is excellent in planarity, furthermore, with which a high polishing rate can be obtained even in an initial stage of polishing, and provided is a polishing method using the polishing liquid.Type: ApplicationFiled: July 8, 2008Publication date: December 23, 2010Applicant: HITACHI CHEMICAL CO., LTD.Inventors: Kouji Haga, Masato Fukasawa, Jin Amanokura, Hiroshi Nakagawa
-
Publication number: 20100216309Abstract: Disclosed is a CMP polishing liquid for polishing a substrate having a layer containing ruthenium, comprising: an oxidizing agent; polishing particles; water; and a compound having a structure represented by the following Formula (1), or a salt thereof. This CMP liquid is improved in at least the polishing rate to a ruthenium layer when compared with conventional polishing liquid. Also disclosed is a method for polishing a substrate using such a CMP polishing liquid.Type: ApplicationFiled: October 21, 2008Publication date: August 26, 2010Applicant: HITACHI CHEMICAL COMPANY, LTD.Inventors: Hisataka Minami, Hiroshi Ono, Jin Amanokura
-
Publication number: 20100120250Abstract: The present invention relates to a metal polishing slurry containing abrasive grains, a metal-oxide-dissolving agent, and water, wherein the abrasive grains contain two or more abrasive grain species different from each other in average secondary particle diameter. Using the metal polishing slurry of the present invention, a metal polishing slurry can be obtained which gives a large polishing rate of an interlayer dielectric layer, and is high in the flatness of the polished surface. This metal polishing slurry can provide suitable method for a semiconductor device which is excellent in being made finer and thinner and in dimension precision and in electric characteristics, is high in reliability, and can attain a decrease in costs.Type: ApplicationFiled: February 22, 2008Publication date: May 13, 2010Applicant: HITACHI CHEMICAL CO., LTD.Inventors: Jin Amanokura, Takafumi Sakurada, Sou Anzai, Takashi Shinoda, Shigeru Nobe
-
Publication number: 20090156007Abstract: The present invention relates to polishing slurry and polishing method used for polishing in a process for forming wirings of a semiconductor device, and the like. There are provided polishing slurry giving a polished surface having high flatness even if the polished surface is made of two or more substances, and further, capable of suppressing metal residue and scratches after polishing, and a method of chemical mechanical polishing using this. The polishing slurry of the present invention is polishing slurry containing at least one of a surfactant and an organic solvent, and a metal oxide dissolving agent and water, or polishing slurry containing water and abrasive of which surface has been modified with an alkyl group, and preferably, it further contains a metal oxidizer, water-soluble polymer, and metal inhibitor.Type: ApplicationFiled: February 4, 2009Publication date: June 18, 2009Applicant: HITACHI CHEMICAL CO., LTD.Inventors: Jin Amanokura, Takafumi Sakurada, Sou Anzai, Masato Fukasawa, Shouichi Sasaki
-
Publication number: 20070232197Abstract: The present invention relates to polishing slurry and polishing method used for polishing in a process for forming wirings of a semiconductor device, and the like. There are provided polishing slurry giving a polished surface having high flatness even if the polished surface is made of two or more substances, and further, capable of suppressing metal residue and scratches after polishing, and a method of chemical mechanical polishing using this. The polishing slurry of the present invention is polishing slurry containing at least one of a surfactant and an organic solvent, and a metal oxide dissolving agent and water, or polishing slurry containing water and abrasive, wherein the surface of the abrasive is modified with an alkyl group, and preferably, it further contains a metal oxidizer, water-soluble polymer, and metal inhibitor.Type: ApplicationFiled: May 25, 2007Publication date: October 4, 2007Applicant: HITACHI CHEMICAL CO., LTD.Inventors: Jin Amanokura, Takafumi Sakurada, Sou Anzai, Masato Fukasawa, Shouichi Sasaki
-
Publication number: 20050050803Abstract: The present invention relates to polishing slurry and polishing method used for polishing in a process for forming wirings of a semiconductor device, and the like. There are provided polishing slurry giving a polished surface having high flatness even if the polished surface is made of two or more substances, and further, capable of suppressing metal residue and scratches after polishing, and a method of chemical mechanical polishing using this. The polishing slurry of the present invention is polishing slurry containing at least one of a surfactant and an organic solvent, and a metal oxide dissolving agent and water, or polishing slurry containing water and abrasive of which surface has been modified with an alkyl group, and preferably, it further contains a metal oxidizer, water-soluble polymer, and metal inhibitor.Type: ApplicationFiled: October 31, 2002Publication date: March 10, 2005Inventors: Jin Amanokura, Takafumi Sakurada, Sou Anzai, Masato Fukasawa, Shouichi Sasaki
-
Patent number: 6060215Abstract: A photosensitive resin composition comprising (A) a resin having an amide bond, an oxyalkylene group and a carboxyl group, (B) a photopolymerizable compound having an ethylenically unsaturated group and (C) a photopolymerization initiator has an alkali developability, good sensitivity and photocurability, an efficient pattern formability by photolithography, a good application workability to a film and is capable of producing cured products having good folding endurance, solder reflow heat resistance, solvent resistance, bondability and nonflammability and suitable for producing a photosensitive element, a photosensitive laminate and a flexible printed circuit board.Type: GrantFiled: March 27, 1998Date of Patent: May 9, 2000Assignee: Hitachi, Ltd.Inventors: Jin Amanokura, Fumihiko Ota, Ritsuko Obata, Toshihiko Akahori, Kenji Suzuki, Hiroshi Nishizawa, Katsunori Tsuchiya, Takao Hirayama, Hiroaki Hirakura