Abstract: Disclosed herein is an air conditioner including a main outlet and a plurality of fine outlets provided in a main body, wherein at least one discharge guide for guiding air discharged by a blowing fan to one of the main outlet and the fine outlets is disposed in the inside of the main body to cool indoor space in various ways.

Abstract: An air conditioner includes a housing, a heat exchanger arranged to exchange heat with air flowing into the housing, a blower fan arranged inside the housing for discharging air that has exchanged heat with the heat exchanger to the outside and a discharging plate having an opening formed to discharge air blown from the blower fan out of the housing, and a plurality of discharging holes formed to discharge air to surroundings of the opening, wherein the discharging plate is arranged to discharge the air that has exchanged heat by the heat exchanger out of the housing, and wherein the discharging plate is made of metal. By such configuration, air conditioner increase user satisfaction.

Abstract: An air conditioner of present invention comprises a housing having an outer panel forming the exterior and an opening formed on the outer panel, a heat exchanger configured to exchange heat with air flowing into the housing, and a door unit configured to open or close the opening by moving forward or backward from the opening through which the heat exchanged air is discharged. Wherein the door unit comprises a door blade configured to open or close the opening, a door operating part configured to move the door blade forward or backward, and a controller configured to control the air discharged from the opening to be moved forward from the opening in a straight line or to be discharged radially from the opening by controlling a distance between the door blade and the opening.

Abstract: An air conditioner includes a housing, a heat exchanger arranged to exchange heat with air flowing into the housing, a blower fan arranged inside the housing for discharging air that has exchanged heat with the heat exchanger to the outside and a discharging plate having an opening formed to discharge air blown from the blower fan out of the housing, and a plurality of discharging holes formed to discharge air to surroundings of the opening, wherein the discharging plate is arranged to discharge the air that has exchanged heat by the heat exchanger out of the housing, and wherein the discharging plate is made of metal. By such configuration, air conditioner increase user satisfaction.

Abstract: An air conditioner includes a housing including a front panel provided with at least one opening, and a rear lower panel disposed at a rear side of the front panel, at least one discharge outlet exposed to a front of the front panel through the opening, at least one suction inlet formed in the housing, at least one heat exchanger to exchange heat with external air through the suction inlet, at least mixed-flow fan rotatably disposed between the heat exchanger and the discharge outlet to suction the air having exchanged heat with the heat exchanger and discharge the air through the discharge outlet, and a drain panel disposed at a lower portion of the heat exchanger to collect condensate produced during heat exchange, and integrated with the rear panel through injection molding.

Abstract: An air conditioner according to the present disclosure includes a housing provided with an outer panel forming an appearance, and an opening formed in the outer panel; a heat exchanger configured to exchange heat with air introduced to the inside of the housing; a first discharge portion connected to the opening to discharge heat-exchanged air to the outside; a second discharge portion disposed in a lower side of the first discharge portion in the outer panel to discharge the heat-exchanged air; and a blowing fan disposed inside of the housing to move air, which is heat-exchanged by the heat exchanger, in a direction of the second discharge portion.

Abstract: An air conditioner of present invention comprises a housing having an outer panel forming the exterior and an opening formed on the outer panel, a heat exchanger configured to exchange heat with air flowing into the housing, and a door unit configured to open or close the opening by moving forward or backward from the opening through which the heat exchanged air is discharged. Wherein the door unit comprises a door blade configured to open or close the opening, a door operating part configured to move the door blade forward or backward, and a controller configured to control the air discharged from the opening to be moved forward from the opening in a straight line or to be discharged radially from the opening by controlling a distance between the door blade and the opening.

Abstract: The present invention concept relates to vertical field effect transistor and method of fabricating the same. A method of fabricating a vertical field effect transistor is provided as follows. A fin structure having a sidewall is formed on a substrate. A lower spacer, a gate pattern and an upper spacer surround a lower sidewall region, a center sidewall region and an upper sidewall region, respectively. The lower spacer, the gate pattern and the upper spacer are vertically stacked on each other along the sidewall of the fin structure. To form the lower spacer, a preliminary spacer layer is formed to surround the lower sidewall region of the fin structure; a doped region and an undoped region are formed in the preliminary spacer layer by doping partially impurities in the preliminary spacer using a directional doping process; and the undoped region of the preliminary spacer layer is removed so that the doped region of the preliminary spacer layer remains to form the lower spacer.

Abstract: A unit cycle process is repeatedly performed to form the thin film having a predetermined thickness. In the unit cycle process, a preliminary film layer is formed on a wafer and a thin film layer is formed on the wafer by converting the preliminary film layer to the thin film layer. The thin film layer is repeatedly formed on a thin film layer previously formed in the performing repeatedly of the unit cycle process.

Abstract: A method of fabricating a fin field effect transistor (FinFET) is provided as follows. A fin structure is formed on a substrate. A gate pattern and a source/drain (S/D) electrode are formed on the fin structure. The gate pattern and the S/D electrode are spaced apart from each other. A blocking layer is on the fin structure to cover the gate pattern and the S/D electrode. A sacrificial pattern is formed on the blocking layer and between the gate pattern and S/D electrode. The sacrificial pattern has a first thickness and a first width. A capping layer is formed on the sacrificial layer. An air gap is formed by removing the sacrificial layer through the capping layer. The air gap is formed between the gate pattern and the S/D electrode and has the first thickness and the first width.

Abstract: A semiconductor device is provided. The semiconductor includes a plurality of interlayer insulating layers and a plurality of gate electrodes alternately stacked in a first direction on a substrate. The plurality of interlayer insulating layers and the plurality of gate electrodes constitute a side surface extended in the first direction. A gate dielectric layer is disposed on the side surface. A channel pattern is disposed on the gate dielectric layer. The gate dielectric layer includes a protective pattern, a charge trap layer, and a tunneling layer. The protective pattern includes a portion disposed on a corresponding gate electrode of the plurality of gate electrodes. The charge trap layer is disposed on the protective pattern. The tunneling layer is disposed between the charge trap layer and the channel pattern. The protective pattern is denser than the charge trap layer.

Abstract: A method of fabricating a fin field effect transistor (FinFET) is provided as follows. A fin structure is formed on a substrate. A gate pattern and a source/drain (S/D) electrode are formed on the fin structure. The gate pattern and the S/D electrode are spaced apart from each other. A blocking layer is on the fin structure to cover the gate pattern and the S/D electrode. A sacrificial pattern is formed on the blocking layer and between the gate pattern and S/D electrode. The sacrificial pattern has a first thickness and a first width. A capping layer is formed on the sacrificial layer. An air gap is formed by removing the sacrificial layer through the capping layer. The air gap is formed between the gate pattern and the S/D electrode and has the first thickness and the first width.

Abstract: A method of fabricating a vertical field effect transistor is provided as follows. A fin structure having a sidewall is formed on a substrate. A lower spacer, a gate pattern and an upper spacer surround a lower sidewall region, a center sidewall region and an upper sidewall region, respectively. The lower spacer, the gate pattern and the upper spacer are vertically stacked on each other along the sidewall of the fin structure. To form the lower spacer, a preliminary spacer layer is formed to surround the lower sidewall region of the fin structure; a doped region and an undoped region are formed in the preliminary spacer layer by doping partially impurities in the preliminary spacer using a directional doping process; and the undoped region of the preliminary spacer layer is removed so that the doped region of the preliminary spacer layer remains to form the lower spacer.

Abstract: An indoor unit of an air conditioner has an improved discharge structure of air. The indoor unit of an air conditioner includes a panel which defines an external appearance thereof and has an opening, a mixed flow fan which is located within the panel, a heat exchanger unit which is located rearward of the mixed flow fan, an inlet port which is located rearward of the heat exchanger unit so that air is suctioned from rearward of the heat exchanger unit to be introduced into the mixed flow fan, an outlet port which is exposed forward of the panel through the opening so that the air passing though the mixed flow fan is discharged through a front portion of the panel, and a plurality of circular louvers to open and close the outlet port by moving outwards from a center of the outlet port.

Abstract: An air conditioner to prevent fingers from being jammed therein during a closing operation of an opening and a method of controlling the same are provided. The air conditioner includes a housing in which an opening is formed, a door unit provided to be movable around the opening to open or close the opening, and at least one configured to control the door unit to stop at a position spaced a preset first distance from the opening during a closing operation of the door unit and control the closing operation of the door unit.

Abstract: In a method of forming an oxide layer of a semiconductor process, a preliminary precursor flow is provided on a substrate in a deposition chamber to form a preliminary precursor layer, a precursor flow and a first oxidizing agent flow are provided on the preliminary precursor layer alternately and repeatedly to form precursor layers and first oxidizing agent layers alternately stacked on the preliminary precursor layer, and a second oxidizing agent flow is provided on the precursor layer or the first oxidizing agent layer alternately stacked to form a second oxidizing agent layer.

Abstract: An air conditioner includes a housing, a heat exchanger arranged to exchange heat with air flowing into the housing, a blower fan arranged inside the housing for discharging air that has exchanged heat with the heat exchanger to the outside and a discharging plate having an opening formed to discharge air blown from the blower fan out of the housing, and a plurality of discharging holes formed to discharge air to surroundings of the opening, wherein the discharging plate is arranged to discharge the air that has exchanged heat by the heat exchanger out of the housing, and wherein the discharging plate is made of metal. By such configuration, air conditioner increase user satisfaction.

Abstract: A non-volatile memory device having a vertical structure includes a semiconductor layer, a sidewall insulation layer extending in a vertical direction on the semiconductor layer, and having one or more protrusion regions, first control gate electrodes arranged in the vertical direction on the semiconductor layer, and respectively contacting one of portions of the sidewall insulation layer where the one or more protrusion regions are not formed and second control gate electrodes arranged in the vertical direction on the semiconductor layer, and respectively contacting one of the one or more protrusion regions.

Abstract: A particle sensing device and an air conditioner including a sensor has a sensing path through which air passes, a flow path housing which accommodates the sensor and guides air, and a flow path switching device to all air suctioned from the outside is guided to the sensing path, or some of the air suctioned from the outside and moving flows back in an obliquely upward direction and flows into the sensing path.

Abstract: There are provided methods for manufacturing a semiconductor device including providing a substrate including a metal layer including an oxidized surface layer in a heat treatment chamber, generating hydrogen radicals within the heat treatment chamber and reducing the oxidized surface layer of the metal layer using the hydrogen radicals.