Abstract: An apparatus is provided for nanoantenna-enhanced detection of infrared radiation. The apparatus includes one or more detector pixels. A plurality of detector pixels can constitute a focal plane array (FPA). Each detector pixel carries at least a first and a second subpattern of nanoantenna elements, with elements of the second subpattern interpolated between elements of the first subpattern. Each detector pixel also includes separate collection electrodes for collecting photogenerated current from the respective subpatterns.

Abstract: In a superlattice (SL) photodetector, each period of the SL includes first and second semiconductor layers having different compositions, at least one of which comprises indium arsenide (InAs). At least one of these two semiconductor layers has a graded composition. In embodiments, the first semiconductor layer comprises InAs and the second semiconductor layer is a graded layer comprising indium arsenide antimonide (InAsSb), wherein the antimony (Sb) concentration is varied. In examples, the Sb concentration in the second layer gradually increases from the top and bottom toward the middle of the layer.

Abstract: An exemplary embodiment of the present invention is a photodetector comprising a semiconductor body, a periodically patterned metal nanoantenna disposed on a surface of the semiconductor body, and at least one electrode separate from the nanoantenna. The semiconductor body comprises an active layer in sufficient proximity to the nanoantenna for plasmonic coupling thereto. The nanoantenna is dimensioned to absorb electromagnetic radiation in at least some wavelengths not more than 12 ?m that are effective for plasmonic coupling into the active layer. The electrode is part of an electrode arrangement for obtaining a photovoltage or photocurrent in operation under appropriate stimulation.

Abstract: A two-color detector includes a first absorber layer. The first absorber layer exhibits a first valence band energy characterized by a first valence band energy function. A barrier layer adjoins the first absorber layer at a first interface. The barrier layer exhibits a second valence band energy characterized by a second valence band energy function. The barrier layer also adjoins a second absorber layer at a second interface. The second absorber layer exhibits a third valence band energy characterized by a third valence band energy function. The first and second valence band energy functions are substantially functionally or physically continuous at the first interface and the second and third valence band energy functions are substantially functionally or physically continuous at the second interface.

Abstract: The present invention relates generally to the generation and characterization of neutralizing anti-IFN-? monoclonal antibodies with broad reactivity against various IFN-? subtypes. The invention further relates to the use of such anti-IFN-? antibodies in the diagnosis and treatment of disorders associated with increased expression of TUN-?, in particular, autoimmune disorders such as insulin-dependent diabetes mellitus (IDDM) and systemic lupus erythematosus (SLE).

Abstract: The present invention relates generally to the generation and characterization of neutralizing anti-IFN-? monoclonal antibodies with broad reactivity against various IFN-? subtypes. The invention further relates to the use of such anti-IFN-? antibodies in the diagnosis and treatment of disorders associated with increased expression of IFN-?, in particular, autoimmune disorders such as insulin-dependent diabetes mellitus (IDDM) and systemic lupus erythematosus (SLE).

Abstract: A photodetector is disclosed for the detection of infrared light with a long cutoff wavelength in the range of about 4.5-10 microns. The photodetector, which can be formed on a semiconductor substrate as an nBn device, has a light absorbing region which includes InAsSb light-absorbing layers and tensile-strained layers interspersed between the InAsSb light-absorbing layers. The tensile-strained layers can be formed from GaAs, InAs, InGaAs or a combination of these III-V compound semiconductor materials. A barrier layer in the photodetector can be formed from AlAsSb or AlGaAsSb; and a contact layer in the photodetector can be formed from InAs, GaSb or InAsSb. The photodetector is useful as an individual device, or to form a focal plane array.

Abstract: The present invention relates generally to the generation and characterization of neutralizing anti-IFN-? monoclonal antibodies with broad reactivity against various IFN-? subtypes. The invention further relates to the use of such anti-IFN-? antibodies in the diagnosis and treatment of disorders associated with increased expression of IFN-?, in particular, autoimmune disorders such as insulin-dependent diabetes mellitus (IDDM) and systemic lupus erythematosus (SLE).

Abstract: A photodetector is disclosed for the detection of near-infrared light with a wavelength in the range of about 0.9-1.7 microns. The photodetector, which can be formed as either an nBp device or a pBn device on an InP substrate, includes an InGaAs light-absorbing layer, an InAlGaAs graded layer, an InAlAs or InP barrier layer, and an InGaAs contact layer. The photodetector can detect near-infrared light with or without the use of an applied reverse-bias voltage and is useful as an individual photodetector, or to form a focal plane array.

Abstract: An infrared focal plane array (FPA) is disclosed which utilizes a strained-layer superlattice (SLS) formed of alternating layers of InAs and InxGa1-xSb with 0?x?0.5 epitaxially grown on a GaSb substrate. The FPA avoids the use of a mesa structure to isolate each photodetector element and instead uses impurity-doped regions formed in or about each photodetector for electrical isolation. This results in a substantially-planar structure in which the SLS is unbroken across the entire width of a 2-D array of the photodetector elements which are capped with an epitaxially-grown passivation layer to reduce or eliminate surface recombination. The FPA has applications for use in the wavelength range of 3-25 ?m.

Abstract: The present invention relates generally to the generation and characterization of neutralizing anti-IFN-? monoclonal antibodies with broad reactivity against various IFN-? subtypes. The invention further relates to the use of such anti-IFN-? antibodies in the diagnosis and treatment of disorders associated with increased expression of IFN-?, in particular, autoimmune disorders such as insulin-dependent diabetes mellitus (IDDM) and systemic lupus erythematosus (SLE).

Abstract: The present invention relates generally to the generation and characterization of neutralizing anti-IFN-? monoclonal antibodies with broad reactivity against various IFN-? subtypes. The invention further relates to the use of such anti-IFN-? antibodies in the diagnosis and treatment of disorders associated with increased expression of IFN-?, in particular, autoimmune disorders such as insulin-dependent diabetes mellitus (IDDM) and systemic lupus erythematosus (SLE).

Abstract: A photodetector for detecting infrared light in a wavelength range of 3-25 ?m is disclosed. The photodetector has a mesa structure formed from semiconductor layers which include a type-II superlattice formed of alternating layers of InAs and InxGa1-xSb with 0?x?0.5. Impurity doped regions are formed on sidewalls of the mesa structure to provide for a lateral conduction of photo-generated carriers which can provide an increased carrier mobility and a reduced surface recombination. An optional bias electrode can be used in the photodetector to control and vary a cut-off wavelength or a depletion width therein. The photodetector can be formed as a single-color or multi-color device, and can also be used to form a focal plane array which is compatible with conventional read-out integrated circuits.

Abstract: The present invention relates generally to the generation and characterization of neutralizing anti-IFN-? monoclonal antibodies with broad reactivity against various IFN-? subtypes. The invention further relates to the use of such anti-IFN-? antibodies in the diagnosis and treatment of disorders associated with increased expression of IFN-?, in particular, autoimmune disorders such as insulin-dependent diabetes mellitus (IDDM) and systemic lupus erythematosus (SLE).

Abstract: The present invention relates generally to the generation and characterization of neutralizing anti-IFN-? monoclonal antibodies with broad reactivity against various IFN-? subtypes. The invention further relates to the use of such anti-IFN-? antibodies in the diagnosis and treatment of disorders associated with increased expression of IFN-?, in particular, autoimmune disorders such as insulin-dependent diabetes mellitus (IDDM) and systemic lupus erythematosus (SLE).

Abstract: A VCSEL includes a substrate having a partially removed portion; a metal-assisted DBR having a metal layer and a first mirror stack, wherein the metal layer is located at the partially removed portion of the substrate; an active region having a plurality of quantum wells over the metal-assisted DBR; and a second mirror stack over the active region, wherein a number of alternating layers of the first mirror stack is substantially smaller than a number typically required for a VCSEL without the integrated metal reflector. Such a metal-assisted DBR is especially useful for a long-wavelength VCSEL on a InP substrate or a red-color VCSEL on a GaAs substrate.

Abstract: An infrared focal plane array (FPA) is disclosed which utilizes a strained-layer superlattice (SLS) formed of alternating layers of InAs and InxGa1?xSb with 0?x?0.5 epitaxially grown on a GaSb substrate. The FPA avoids the use of a mesa structure to isolate each photodetector element and instead uses impurity-doped regions formed in or about each photodetector for electrical isolation. This results in a substantially-planar structure in which the SLS is unbroken across the entire width of a 2-D array of the photodetector elements which are capped with an epitaxially-grown passivation layer to reduce or eliminate surface recombination. The FPA has applications for use in the wavelength range of 3-25 ?m.

Abstract: Compositions of matter encoding or useful for expressing anti-interferon alpha antibodies are provided. Methods of using such compositions of matter for producing anti-interferon alpha antibodies are also provided.

Abstract: A vertical cavity surface emitting laser (VCSEL) includes independently definable current and optical confinement structures that provide unique forms of drive current and transverse mode confinement, respectively. The optical guide may be formed from an upper distributed Bragg reflector (DBR), as an etched mesa structure and/or as an intracavity optical guide. The current guide may include an ion-implanted region within the upper DBR. A dielectric structure is formed over the upper DBR and surrounds the optical guide.

Abstract: An infrared focal plane array (FPA) is disclosed which utilizes a strained-layer superlattice (SLS) formed of alternating layers of InAs and InxGa1?xSb with 0?x?0.5 epitaxially grown on a GaSb substrate. The FPA avoids the use of a mesa structure to isolate each photodetector element and instead uses impurity-doped regions formed in or about each photodetector for electrical isolation. This results in a substantially-planar structure in which the SLS is unbroken across the entire width of a 2-D array of the photodetector elements which are capped with an epitaxially-grown passivation layer to reduce or eliminate surface recombination. The FPA has applications for use in the wavelength range of 3-25 ?m.