Abstract: A memory device includes core memory such as flash memory for storing data. The memory device includes a first power input to receive a first voltage used to power the flash memory. Additionally, the memory device includes a second power input to receive a second voltage. The memory device includes power management circuitry configured to receive the second voltage and derive one or more internal voltages. The power management circuitry supplies or conveys the internal voltages to the flash memory. The different internal voltages generated by the power management circuitry (e.g., voltage converter circuit) and supplied to the core memory enable operations such as read/program/erase with respect to cells in the core memory.

Abstract: A technique for serially coupling devices in a daisy chain cascading arrangement. Devices are coupled in a daisy chain cascade arrangement such that outputs of a first device are coupled to inputs of a second device later in the daisy chain to accommodate the transfer of information, such as data, address and command information, and control signals to the second device from the first device. The devices coupled in the daisy chain comprise a serial input (SI) and a serial output (SO). Information is input to a device via the SI. The information is output from the device via the SO. The SO of an earlier device in the daisy chain cascade is coupled to the SI of a device later in the daisy chain cascade. Information input to the earlier device via the device's SI is passed through the device and output from the device via the device's SO. The information is then transferred to the later device's SI via the connection from the earlier device's SO and the later device's SI.

Abstract: A flash memory device having at least one bank, where the each bank has an independently configurable page size. Each bank includes at least two memory planes having corresponding page buffers, where any number and combination of the memory planes are selectively accessed at the same time in response to configuration data and address data. The configuration data can be loaded into the memory device upon power up for a static page configuration of the bank, or the configuration data can be received with each command to allow for dynamic page configuration of the bank. By selectively adjusting a page size the memory bank, the block size is correspondingly adjusted.

Abstract: An apparatus, system, and computer-implemented method for controlling data transfer between a plurality of serial data link interfaces and a plurality of memory banks in a semiconductor memory is disclosed. In one example, a flash memory device with multiple links and memory banks, where the links are independent of the banks, is disclosed. The flash memory devices may be cascaded in a daisy-chain configuration using echo signal lines to serially communicate between memory devices. In addition, a virtual multiple link configuration is described wherein a single link is used to emulate multiple links.

Abstract: A NAND flash memory bank having a plurality of bitlines of a memory array connected to a page buffer, where NAND cell strings connected to the same bitline are formed in at least two well sectors. At least one well sector can be selectively coupled to an erase voltage during an erase operation, such that unselected well sectors are inhibited from receiving the erase voltage. When the area of the well sectors decrease, a corresponding decrease in the capacitance of each well sector results. Accordingly, higher speed erasing of the NAND flash memory cells relative to a single well memory bank is obtained when the charge pump circuit drive capacity remains unchanged. Alternately, a constant erase speed corresponding to a single well memory bank is obtained by matching a well segment having a specific area to a charge pump with reduced drive capacity. A reduced drive capacity charge pump will occupy less semiconductor chip area, thereby reducing cost.

Abstract: The present invention provides a method for purifying a large amount of human granulocyte-colony stimulating factors (hG-CSFs) from a recombinant E. coli with high yield and purity. According to the method of the present invention, human granulocyte-colony stimulating factor, identical to the native form expressed in the human body, can be easily purified with high yield and purity without an additional activation process. In particular, according to the purification method of the present invention, hG-CSF variants expressed in E. coli are efficiently removed to obtain physiologically active hG-CSFs with high purity.

Abstract: A gate driving module includes a gate driver and a gate signal generator. The gate driver generates a vertical start signal, a plurality of gate clock signals and a plurality of inverse gate clock signals based on a vertical start control signal, a plurality of gate clock control signals, a gate on voltage, a first gate off voltage and a second gate off voltage. The number of the gate clock signals is P. The number of the inverse gate clock signals is P. The number of the gate clock control signals is P. P is a positive integer equal to or greater than two. The gate signal generator generates a gate signal based on the vertical start signal, the gate clock signals and the inverse gate clock signals.

Abstract: A first memory device and second memory device have a same input/output layout configuration. To form a stack, the second memory device is secured to the first memory device. To facilitate connectivity, the second memory device is rotationally offset with respect to the first memory device in the stack to align outputs of the first memory device with corresponding inputs of the second memory device. The rotational offset of the second memory device with respect to the first memory device aligns one or more outputs of the first memory device with one or more respective inputs of the second memory device. Based on links between outputs and inputs from one memory device to another in the stack, the stack of memory devices can include paths facilitating one or more series connection configurations through the memory devices.

Abstract: A composite semiconductor memory device, comprising: a plurality of nonvolatile memory devices; and an interface device connected to the plurality of nonvolatile memory devices and for connection to a memory controller, the interface device comprising an error correction coding (ECC) engine. Also, a memory system, comprising: a memory controller; and at least one composite semiconductor memory device configured for being written to and read from by the memory controller and comprising a built-in error correction coding (ECC) engine.

Abstract: A composite memory device including discrete memory devices and a bridge device for controlling the discrete memory devices in response to global memory control signals having a format or protocol that is incompatible with the memory devices. The discrete memory devices can be commercial off-the-shelf memory devices or custom memory devices which respond to native, or local memory control signals. The global and local memory control signals include commands and command signals each having different formats. The composite memory device includes a system in package including the semiconductor dies of the discrete memory devices and the bridge device, or can include a printed circuit board having packaged discrete memory devices and a packaged bridge device mounted thereto.

Abstract: A mass storage memory module system including a memory module having memory holding members which can be connected to each other, and removably connected to a memory controller. One or more modular memory holding members can be connected to each other to expand the overall storage capacity of the memory module. The presently described expandable memory module does not have a storage capacity limit. A memory holding member includes a plate, a plane, a board and another material having at least one memory device, or, on which at least one memory device is held or to which at least one memory device is mounted.

Abstract: A solid-state drive architecture and arrangement for standardized disk drive form factors, PCI type memory cards and general motherboard memory. The solid-state drive architecture is modular in that a main printed circuit board (PCB) of the memory system includes a host interface connector, a memory controller, and connectors. Each connector can removably receive a memory blade, where each memory blade includes a plurality of memory devices serially connected to each other via a serial interface. Each memory blade includes a physical serial interface for providing data and control signals to a first memory device in the serial chain and for receiving data and control signals from a last memory device in the serial chain. Each memory blade can be sized in length and width to accommodate any number of memory devices on either side thereof.

Abstract: A flash memory device having at least one bank, where the each bank has an independently configurable page size. Each bank includes at least two memory planes having corresponding page buffers, where any number and combination of the memory planes are selectively accessed at the same time in response to configuration data and address data. The configuration data can be loaded into the memory device upon power up for a static page configuration of the bank, or the configuration data can be received with each command to allow for dynamic page configuration of the bank. By selectively adjusting a page size the memory bank, the block size is correspondingly adjusted.

Abstract: A composite semiconductor memory device, comprising: a plurality of nonvolatile memory devices; and an interface device connected to the plurality of nonvolatile memory devices and for connection to a memory controller, the interface device comprising an error correction coding (ECC) engine. Also, a memory system, comprising: a memory controller; and at least one composite semiconductor memory device configured for being written to and read from by the memory controller and comprising a built-in error correction coding (ECC) engine.

Abstract: A NAND flash memory bank having a plurality of bitlines of a memory array connected to a page buffer, where NAND cell strings connected to the same bitline are formed in at least two well sectors. At least one well sector can be selectively coupled to an erase voltage during an erase operation, such that unselected well sectors are inhibited from receiving the erase voltage. When the area of the well sectors decrease, a corresponding decrease in the capacitance of each well sector results. Accordingly, higher speed erasing of the NAND flash memory cells relative to a single well memory bank is obtained when the charge pump circuit drive capacity remains unchanged. Alternately, a constant erase speed corresponding to a single well memory bank is obtained by matching a well segment having a specific area to a charge pump with reduced drive capacity. A reduced drive capacity charge pump will occupy less semiconductor chip area, thereby reducing cost.

Abstract: Disclosed is a semiconductor device with through-silicon vias (TSVs) that comprises a primary TSV group, a plurality of signal lines connected to the primary TSV group, a redundant TSV group and connection circuitry responsive to a control signal having a predetermined value to electrically connect the signal lines to the redundant TSV group.

Abstract: A plurality of memory devices (e.g., DRAMs, SRAMs, NAND Flash, NOR Flash) is serially interconnected. Each of the interconnected devices receives a device identifier (ID) and latches it as its ID. Each device includes a circuit for calculating another ID or an incremented ID to generate it. The generated ID is transferred to another device and the ID is incremented in each of the devices in the serial interconnection. The last device in the interconnection provides a last generated ID that is provided to a memory controller having a recognition circuit that recognizes the total number of the serially interconnected devices, from the provided last generated ID. The recognition circuit recognizes the total output latency of the devices in the serial interconnection.

Abstract: A stack that includes non-volatile memory devices is disclosed. One of the non-volatile memory devices in the stack is a master device, and the remaining memory device or devices is a slave device(s).

Abstract: A memory system having a serial data interface and a serial data path core for receiving data from and for providing data to at least one memory bank as a serial bitstream. The memory bank is divided into two halves, where each half is divided into upper and lower sectors. Each sector provides data in parallel to a shared two-dimensional page buffer with an integrated self column decoding circuit. A serial to parallel data converter within the memory bank couples the parallel data from either half to the serial data path core. The shared two-dimensional page buffer with the integrated self column decoding circuit minimizes circuit and chip area overhead for each bank, and the serial data path core reduces chip area typically used for routing wide data buses. Therefore a multiple memory bank system is implemented without a significant corresponding chip area increase when compared to a single memory bank system having the same density.

Abstract: Systems and methods are provided for using page buffers of memory devices connected to a memory controller through a common bus. A page buffer of a memory device is used as a temporary cache for data which is written to the memory cells of the memory device. This can allow the memory controller to use memory devices as temporary caches so that the memory controller can free up space in its own memory.