Abstract: The present invention relates to a thermoelectric conversion device using a solvating material, the device comprising: a cell with a closed structure, comprising a metal ammonia or metal amine compound as a solvating material; a polarization or porous separation membrane; and a heating unit, which prevents the outflow of the solvating material and thus maintains the solvating material in a reversible state.

Abstract: A soldering jig is disclosed. The soldering jig in accordance with an embodiment of the present invention includes: a mounting block having a plurality of accommodation holes penetrating from one surface to the other surface thereof, a plurality of soldered objects being accommodated in the plurality of accommodation holes; a first cover block coupled to one surface of the mounting block and having a support part configured to support the plurality of soldered objects accommodated in the plurality of accommodation holes; and a second cover block coupled to the other surface of the mounting block and having a plurality of pressing protrusions protruded to face the plurality of accommodation holes, respectively, to elastically support the plurality of soldered objects. Accordingly, a Gunn diode package that is soldered in a uniform quality can be obtained by maintaining a uniform pressure and heat transfer to the soldered objects in a soldering process.

Abstract: A method of fabricating a two-terminal semiconductor component using a trench technique is disclosed that includes forming a trench by etching an etching pattern formed on a substrate on which an active layer having impurities added is grown, forming a front metal layer on a front upper surface of the substrate by using an evaporation method or a sputtering method after removing the etching pattern, forming a metal plated layer on the front surface of the substrate on which the front metal layer is formed, polishing a lower surface of the substrate by using at least one of a mechanical polishing method and a chemical polishing method until the front metal layer is exposed, forming a rear metal layer on the polished substrate, and removing each component by using at least one of a dry etching method and a wet etching method.

Abstract: A method of fabricating a two-terminal semiconductor component using a trench technique is disclosed that includes forming a trench by etching an etching pattern formed on a substrate on which an active layer having impurities added is grown, forming a front metal layer on a front upper surface of the substrate by using an evaporation method or a sputtering method after removing the etching pattern, forming a metal plated layer on the front surface of the substrate on which the front metal layer is formed, polishing a lower surface of the substrate by using at least one of a mechanical polishing method and a chemical polishing method until the front metal layer is exposed, forming a rear metal layer on the polished substrate, and removing each component by using at least one of a dry etching method and a wet etching method.

Abstract: A passive millimeter wave system of this invention is comprised of; human body detector sensors which detect human bodies passing a scanner; passive millimeter wave image sensor modules arranged horizontally or vertically to acquire millimeter wave images radiated from human body in horizontal and vertical axes at certain time intervals; amplifier which amplifies the DC voltage from passive millimeter image sensor modules to a certain level; analog-digital converter which transforms the amplified DC voltage to digital signals; mobility detector which detects movement of human body passing predetermined position to acquire millimeter wave signals from human body; digital signal processor which interlinks and reconstructs signals with the time and position of the object obtained from mobility detector and the signals obtained by passive millimeter image sensor modules; monitor which displays the image of the signals processed with digital signal processor.

Abstract: A passive millimeter wave system of this invention is comprised of; human body detector sensors which detect human bodies passing a scanner; passive millimeter wave image sensor modules arranged horizontally or vertically to acquire millimeter wave images radiated from human body in horizontal and vertical axes at certain time intervals; amplifier which amplifies the DC voltage from passive millimeter image sensor modules to a certain level; analog-digital converter which transforms the amplified DC voltage to digital signals; mobility detector which detects movement of human body passing predetermined position to acquire millimeter wave signals from human body; digital signal processor which interlinks and reconstructs signals with the time and position of the object obtained from mobility detector and the signals obtained by passive millimeter image sensor modules; monitor which displays the image of the signals processed with digital signal processor.

Abstract: This invention relates to an object identification device, for the blind, that identifies objects such as walls and cars by detecting the ambient environment through a 94-GHz millimeter-wave image system mounted on the eyeglass and inform the situation to the user by transforming the identified signals to the voice or sound. This invention is designed to not only help the blind in walking but also provide the function to find the person who has a device realizing this invention.

Abstract: The present invention relates to the manufacture of a semiconductor switch for use in a variety of communication systems, and particularly to the manufacture of a RF micro-machined switch of pull-up type, wherein an electrostatic electrode is used so as to cause the contact pad involved in the operation of the switch to be pulled upward from below. The RF micro-machined switch of pull-up type according to the invention has a high isolation characteristic for shorting and opening the circuit and needs a low driving voltage, so that miniaturization of communication system is possible because a circuit for booting driving voltage is not required within the system. Further, the characteristic of switch is little changed after a long use because the metal composing the contact pad experiences little deformation during operation, whereby the semi-permanent use of switch is possible.

Abstract: This invention relates to an object identification device, for the blind, that identifies objects such as walls and cars by detecting the ambient environment through a 94-GHz millimeter-wave image system mounted on the eyeglass and inform the situation to the user by transforming the identified signals to the voice or sound. This invention is designed to not only help the blind in walking but also provide the function to find the person who has a device realizing this invention.

Abstract: The present invention relates to the manufacture of a semiconductor switch for use in a variety of communication systems, and particularly to the manufacture of a RF micro-machined switch of pull-up type, wherein an electrostatic electrode is used so as to cause the contact pad involved in the operation of the switch to be pulled upward from below. The RF micro-machined switch of pull-up type according to the invention has a high isolation characteristic for shorting and opening the circuit and needs a low driving voltage, so that miniaturization of communication system is possible because a circuit for booting driving voltage is not required within the system. Further, the characteristic of switch is little changed after a long use because the metal composing the contact pad experiences little deformation during operation, whereby the semi-permanent use of switch is possible.

Abstract: The present invention discloses an improved transistor with a &pgr;-gate structure usable at microwave and millimeter wave and comprises a GaAs wafer, GND formed on the bottom surface of the wafer and grounded to source layers formed on the top surface of the wafer by the process of back-side via-hole. A drain is formed on the top surface of the wafer between the source layers and has an air layer on top. A gate, shaped as a result of using an air bridge technique, contacts the top surface of the wafer between the source layers and the drain so as to support the wafer at laterally opposite ends over the air layer of the drain. The gate having &pgr;-structure improves noise characteristics of the transistor because of low electrical resistance, which is a result of the gate structure straddling above the drain stage.

Abstract: Present invention relates to telecommunication switching systems and methods of packet switching and can be usable at development new high-speed telecommunication devices and equipment as switching structure.

Abstract: The present invention relates to a highly efficient searching system using a combination of X ray signal and millimeter wave signal, which allows a practical and effective method for searching human beings in public places where a level of security is required. Millimeter wave and X ray signal emitters and detectors are used to provide a processed image of a detected object, which is then analyzed and compared with objects in a stored database. Flagged objects then signal an alarm to alert security personnel.

Abstract: The present invention relates to a high efficient searching apparatus or processing technique using a combination of X ray signal and millimeter wave signal, which allows a practical and effective method for searching human body to be conducted in air ports or harbors.

Abstract: The present invention proposes a improved transistor with &pgr;-gate structure usable at microwave and millimeter wave and a method for producing the same.