Abstract: A binder solution for an all-solid-state battery, an electrode slurry for an all-solid-state battery including the same and a method of manufacturing an all-solid-state battery using the same, and more particularly to a binder solution for an all-solid-state battery, in which a polymer binder configured such that a non-polar functional group is bonded to the end of a polar functional group is used, whereby the polar functional group is provided by a deprotection mechanism of the polymer binder through a thermal treatment, thus increasing adhesion between electrode materials to thereby improve battery capacity and enabling a wet process to thereby reduce manufacturing costs, an electrode slurry for an all-solid-state battery including the same and a method of manufacturing an all-solid-state battery using the same.

Abstract: An analog sampling apparatus for a liquid crystal display device includes: a data driver to generate an analog data voltage; a data output bus line to receive the analog data voltage; a first sampling and holding circuit connected to the data output bus line to compensate an offset voltage in the analog data voltage and to supply the analog data voltage to a data line of a liquid crystal display panel; and a second sampling and holding circuit connected to the data output bus line arranged to sample the analog data voltage while the analog data voltage is supplied to the data line by the first sampling and holding circuit. The first sampling and holding circuit is arranged to supply the analog data voltage while the second sampling and holding circuit samples the analog data voltage, and to sample the analog data voltage while the second sampling and holding circuit supplies the analog data voltage.

Abstract: A gate-in-panel type liquid crystal display device includes first and second substrates spaced apart from and facing each other, the first and second substrates including a display area and a non-display area; gate lines, data lines, thin film transistors and pixel electrodes in the display area on the first substrate, the gate lines and the data lines crossing each other to define pixel regions, the thin film transistors connected to the gate lines and the data lines, the pixel electrodes connected to the thin film transistors; gate pads and data pads in the non-display area on the first substrate, the gate pads and the data pads receiving direct current (DC) signals and alternating current (AC) signals; gate link lines connected to the gate pads and including first gate link lines and second gate link lines, the first gate link lines transmitting the DC signals and disposed to be adjacent to and parallel to each other, the second gate link lines transmitting the AC signals and disposed to be adjacent to and

Abstract: A liquid crystal display device and fabrication method is provided. The liquid crystal display device includes first and second substrates facing each other and a liquid crystal layer between the first and second substrates. Gate and data lines disposed on the first substrate cross each other to define a pixel region. A first protrusion extends from the gate line at a crossing of the gate line and the data line. A second protrusion extends from the data line at the crossing of the gate line and the data line. A thin film transistor is connected to the gate line and the data line. A pixel electrode in the pixel region is connected to the thin film transistor.

Abstract: A liquid crystal display device and method for driving the same are provided. A liquid crystal display device includes a driving circuit that includes a data driver that is inputted with a m-bit data signal. The data driver is operative to extract a n-bit data signal from the m-bit data signal and a (m-n)-bit data signal, and adjust a gray level of the (m-n)-bit data signal using the n-bit data signal. A liquid crystal panel includes a pixel that is supplied with the (m-n)-bit data signal during a plurality of frames.

Abstract: An analog sampling apparatus for a liquid crystal display device includes: a data driver to generate an analog data voltage; a data output bus line to receive the analog data voltage; a first sampling and holding circuit connected to the data output bus line to compensate an offset voltage in the analog data voltage and to supply the analog data voltage to a data line of a liquid crystal display panel; and a second sampling and holding circuit connected to the data output bus line arranged to sample the analog data voltage while the analog data voltage is supplied to the data line by the first sampling and holding circuit. The first sampling and holding circuit is arranged to supply the analog data voltage while the second sampling and holding circuit samples the analog data voltage, and to sample the analog data voltage while the second sampling and holding circuit supplies the analog data voltage.

Abstract: An analog sampling apparatus for a liquid crystal display device includes: a data driver to generate an analog data voltage; a data output bus line to receive the analog data voltage; a first sampling and holding circuit connected to the data output bus line to compensate an offset voltage in the analog data voltage and to supply the analog data voltage to a data line of a liquid crystal display panel; and a second sampling and holding circuit connected to the data output bus line arranged to sample the analog data voltage while the analog data voltage is supplied to the data line by the first sampling and holding circuit. The first sampling and holding circuit is arranged to supply the analog data voltage while the second sampling and holding circuit samples the analog data voltage, and to sample the analog data voltage while the second sampling and holding circuit supplies the analog data voltage.

Abstract: A gate-in-panel type liquid crystal display device includes first and second substrates spaced apart from and facing each other, the first and second substrates including a display area and a non-display area; gate lines, data lines, thin film transistors and pixel electrodes in the display area on the first substrate, the gate lines and the data lines crossing each other to define pixel regions, the thin film transistors connected to the gate lines and the data lines, the pixel electrodes connected to the thin film transistors; gate pads and data pads in the non-display area on the first substrate, the gate pads and the data pads receiving direct current (DC) signals and alternating current (AC) signals; gate link lines connected to the gate pads and including first gate link lines and second gate link lines, the first gate link lines transmitting the DC signals and disposed to be adjacent to and parallel to each other, the second gate link lines transmitting the AC signals and disposed to be adjacent to and

Abstract: A liquid crystal display device and fabrication method is provided. The liquid crystal display device includes first and second substrates facing each other and a liquid crystal layer between the first and second substrates. Gate and data lines disposed on the first substrate cross each other to define a pixel region. A first protrusion extends from the gate line at a crossing of the gate line and the data line. A second protrusion extends from the data line at the crossing of the gate line and the data line. A thin film transistor is connected to the gate line and the data line. A pixel electrode in the pixel region is connected to the thin film transistor.

Abstract: A liquid crystal display device and fabrication method is provided. The liquid crystal display device includes first and second substrates facing each other and a liquid crystal layer between the first and second substrates. Gate and data lines disposed on the first substrate cross each other to define a pixel region. A first protrusion extends from the gate line at a crossing of the gate line and the data line. A second protrusion extends from the data line at the crossing of the gate line and the data line. A thin film transistor is connected to the gate line and the data line. A pixel electrode in the pixel region is connected to the thin film transistor.

Abstract: A liquid crystal display device includes first thin film transistor with a first polysilicon active layer in which a first channel area has first grain boundaries, wherein the first thin film transistor has a first channel direction different from a first grain boundary direction of the first grain boundaries, and a second thin film transistor with a second polysilicon active layer in which a second channel area has second grain boundaries, wherein the second thin film transistor has a second channel direction parallel to a second grain boundary direction of the second grain boundaries, wherein the first and second transistors have a substantially same electrical characteristic.

Abstract: A liquid crystal display device and method for driving the same are provided. A liquid crystal display device includes a driving circuit that includes a data driver that is inputted with a m-bit data signal. The data driver is operative to extract a n-bit data signal from the m-bit data signal and a (m-n)-bit data signal, and adjust a gray level of the (m-n)-bit data signal using the n-bit data signal. A liquid crystal panel includes a pixel that is supplied with the (m-n) -bit data signal during a plurality of frames.

Abstract: A liquid crystal display device and fabrication method is provided. The liquid crystal display device includes first and second substrates facing each other and a liquid crystal layer between the first and second substrates. Gate and data lines disposed on the first substrate cross each other to define a pixel region. A first protrusion extends from the gate line at a crossing of the gate line and the data line. A second protrusion extends from the data line at the crossing of the gate line and the data line. A thin film transistor is connected to the gate line and the data line. A pixel electrode in the pixel region is connected to the thin film transistor.

Abstract: A mask and its application in sequential lateral solidification (SLS) crystallization of amorphous silicon. The mask includes a light absorptive portion that blocks a laser beam and a plurality of tier-shaped light-transmitting portions that pass a laser beam. Each light-transmitting portion has a plurality of adjacent rectangular sub-portions. Adjacent rectangular sub-portions form a step. In operation, the mask moves transversely relative to a amorphous silicon film while a laser performs SLS crystallization. The light portions control grain growth such that high quality polycrystalline silicon is formed.

Abstract: A mask and its application in sequential lateral solidification (SLS) crystallization of amorphous silicon. The mask includes a light absorptive portion that blocks a laser beam and a plurality of tier-shaped light-transmitting portions that pass a laser beam. Each light-transmitting portion has a plurality of adjacent rectangular sub-portions. Adjacent rectangular sub-portions form a step. In operation, the mask moves transversely relative to a amorphous silicon film while a laser performs SLS crystallization. The light portions control grain growth such that high quality polycrystalline silicon is formed.

Abstract: A crystallization apparatus and method that is adapted to crystallize a semiconductor using a non-vacuum process. In the apparatus and method, laser beams are irradiated onto a substrate to grow a crystal unilaterally from the side surface of the substrate. Grain boundaries are minimized under the air atmosphere, so that a crystallization of the substrate can be made in a non-vacuum state to improve the throughput.

Abstract: The present invention relates to a thin film transistor and a fabricating method thereof which improve device characteristics by forming a substance layer such as a vacuum layer or an air layer, which has a remarkable characteristic of insulation, on an active layer. The present invention includes an insulated substrate, an active layer on the insulated substrate wherein the active layer has a source region, a channel region and a drain region, a gate insulating layer having an inner space on the channel region, and a gate electrode on the gate insulating layer over the channel region. And, the present invention includes the steps of forming an active layer on an insulated substrate, forming a gate insulating layer having an inner space on the active layer, forming a gate electrode on the gate insulating layer, and forming a source region and a drain region in the active layer by doping the substrate including the active layer with impurities.

Abstract: The present invention relates to a thin film transistor and a fabricating method thereof which improve device characteristics by forming a substance layer such as a vacuum layer or an air layer, which has a remarkable characteristic of insulation, on an active layer. The present invention includes an insulated substrate, an active layer on the insulated substrate wherein the active layer has a source region, a channel region and a drain region, a gate insulating layer having an inner space on the channel region, and a gate electrode on the gate insulating layer over the channel region. And, the present invention includes the steps of forming an active layer on an insulated substrate, forming a gate insulating layer having an inner space on the active layer, forming a gate electrode on the gate insulating layer, and forming a source region and a drain region in the active layer by doping the substrate including the active layer with impurities.