Abstract: Disclosed is a triple swirl gas turbine combustor using various fuels such as coal gas, DiMethyl Ether, and waste gas generated in an ironworks in a gas turbine. The triple swirl gas turbine combustor combusts three different fuels simultaneously or individually and various fuels such as LCV gas and HCV gas so that fuel flexibility can be improved. Swirl generated in a second swirler of the triple swirler is reversely jetted to increase a mixing degree of a fuel-air mixture and an intensity of a turbulent flow so that combustion efficiency can be increased, harmful exhaust gas can be reduced and vibration can be reduced.

Abstract: Provided is a method of growing carbon nanotubes (CNTs) by forming a catalyst layer that is used to facilitate growth of CNTs to have a multi-layer structure; and injecting a carbon-containing gas to the catalyst layer to grow CNTs, and light emitting devices fabricated by incorporating the CNTs grown.

Abstract: The invention relates to a method for forming a multi-layered binary oxide film for ReRAM. The method includes forming a lower electrode layer on a substrate; forming a metal layer on the lower electrode layer in a vacuum atmosphere; oxidizing the metal layer into a binary oxide film in a vacuum atmosphere; repeating the steps of forming and oxidizing the metal layer to form a desired thickness of the multi-layered binary oxide film; and forming an upper electrode layer on the multi-layered film. The method allows a nonvolatile memory device more efficient than the conventional perovskite structure in a simple process without concerns for surface contamination since the metal layer is formed and oxidized in a vacuum atmosphere.

Abstract: A memory device includes a lower electrode layer formed over a substrate, a resistance layer including a metal nitride layer formed over the lower electrode layer, and an upper electrode layer formed over the resistance layer.

Abstract: An electroluminescent device uses nano structures having a wide surface area. The electroluminescent device includes a substrate, a first electrode having a plurality of nano structures formed on an upper surface of the substrate, a dielectric layer formed so as to correspond to the shape of the nano structures, a light emitting layer formed so as to correspond to the shape of the dielectric layer, and a second electrode covering the light emitting layer. A surface of the second electrode facing the light emitting layer is separated by a predetermined distance from a surface of the nano structures.

Abstract: The present invention relates to a method of manufacturing a genuine leather comprising the steps of Beamhouse, tanning, dyeing, drying and Finishing, wherein anion-emitting material is used in the Finishing step.

Abstract: Disclosed are a method for manufacturing a half-metallic magnetic oxide and a plasma sputtering apparatus used in the method. A conductor provided with at least one hole is disposed between a metal target and a substrate holder in the plasma sputtering apparatus, thereby improving the bonding of metal ions discharged from the metal target to oxygen ions, and a magnetic field with a coercive force larger than that of a thin film to be formed on the substrate, thereby obtaining a magnetic oxide film with excellent properties. In a preferred embodiment of the present invention, a conductor-side power supply unit is connected to the conductor, thereby additionally supplying power to the conductor and generating second plasma. The plasma sputtering apparatus supplies high power so as to decompose oxygen, and discharges metal ions with different electrovalences at a precise ratio by the additional power supply, thereby being effectively used in manufacturing a half-metallic oxide at low temperatures.

Abstract: Disclosed are a method for manufacturing a half-metallic magnetic oxide and a plasma sputtering apparatus used in the method. A conductor provided with at least one hole is disposed between a metal target and a substrate holder in the plasma sputtering apparatus, thereby improving the bonding of metal ions discharged from the metal target to oxygen ions, and a magnetic field with a coercive force larger than that of a thin film to be formed on the substrate, thereby obtaining a magnetic oxide film with excellent properties. In a preferred embodiment of the present invention, a conductor-side power supply unit is connected to the conductor, thereby additionally supplying power to the conductor and generating second plasma. The plasma sputtering apparatus supplies high power so as to decompose oxygen, and discharges metal ions with different electrovalences at a precise ratio by the additional power supply, thereby being effectively used in manufacturing a half-metallic oxide at low temperatures.

Abstract: The present invention provides a plasma enhanced chemical vapor deposition apparatus wherein a grid is positioned between a gas supply section serving as an upper electrode and a substrate holder serving as a lower electrode, to change an electric field in a process chamber and increase a relative number of reactive fine particles. By applying a voltage to the grid, a structural characteristic of a material growing on the substrate can be adjusted, and by employing a position adjustment section for adjusting a position and an inclination of the grid, properties of the growing material, such as vertical orientation, a length, an orientation angle, etc., can be adjusted. The present invention also provides a method of producing a carbon nanotube using the plasma enhanced chemical vapor deposition apparatus. According to the method, it is possible to grow the carbon nanotube at a low temperature of about 300-550° C., preferably 350-550° C.

Abstract: The invention relates to UPC/NPC method for guaranteeing the quality of service in an asynchronous transfer mode networks. The method comprises a first step of performing the operation of UPC/NPC for a stream of CLP=0 cells, based on PCRA algorithm (Po) for the conventional stream of CLP=0 cells. And, UPC/NPC for the stream of CLP=0+1 cells is performed by PCRA algorithm (Po.sub.+1) for the conventional stream of CLP=0+1 cells, together with the compensation circuit using a single register of the invention. Thus, during the traffic negotiation in which two PCR are defined in ATM networks, MPP for the streams of CLP=0 cells and CLP=0+1 cells can be solved and CLR for the stream of CLP=0 cells is guaranteed.

Abstract: A method and a device for wet desulfurization of flue gas to remove a sulfur dioxide(SO.sub.2) contained in flue gas discharged from thermal power stations and boilers are disclosed. In the method the device with a gas layered sieve plate for wet desulfurization of flue gas, an absorbing liquid improves reacting conditions by effecting it own circulation without using additional power due to the structural characteristics possessed by the device and flue gas is treated very satisfactorily thanks to high gas-liquid contact efficiency. In order to minimize power consumption and the size of the device but promote desulfurization to an unusual degree, an absorber is divided into an upper froth layer and a lower liquid layer by a single-stage gas dispersing plate with a large number of gas ejection holes bored therein.