Abstract: According to an embodiment of the disclosure, a system for controlling an emergency bell based on sound comprises an emergency bell device installed in a crime area, gathering sound information generated in the crime area, detecting an emergency event from the gathered sound information, and generating an emergency bell operation signal, an analysis server receiving, in real-time, the sound information from the emergency bell device if the emergency bell operation signal is received, classifying per-time key sound sources in the sound information, and providing a situation analysis result on whether a crime occurs using the classified per-time key sound sources, and a control server receiving the situation analysis result and providing on-site dispatch information or situation response information to a security terminal in charge of the crime area based on the received situation analysis result.

Abstract: Provided a semiconductor device comprises, a plurality of semiconductor patterns spaced in a first direction; a plurality of mold insulating layers between the plurality of semiconductor patterns, a plurality of silicide patterns contacting the plurality of semiconductor patterns; and a plurality of first metal conductive films between the plurality of mold insulating layers and connected to each of the silicide patterns, wherein each of the silicide patterns includes a first sidewall that faces the semiconductor pattern, and a second sidewall which faces the first metal conductive film, the first sidewall of the silicide pattern and the second sidewall of the silicide pattern extends in the first direction, and the first sidewall of the silicide pattern and the second sidewall of the silicide pattern are curved surfaces.

Abstract: A global index with a repartitioning operator is provided. A method for executing a query includes receiving a query including a request to search a first table based on a first value in a first column. The method may include generating a second table by partitioning the second table based on the first column and including, in the second table, a partition identifier and a reference row identifier. The method may include pruning the second table such that a row corresponding to the first value remains in the second table. The method may include repartitioning the row to a stream based on the partition identifier. The method may include executing the query by at least searching the partition of the first table based on the stream and the row identifier of the row. Related systems and articles of manufacture are provided.

Abstract: A semiconductor device includes a substrate, first and second supporter patterns stacked sequentially on the substrate in a first direction and spaced apart from an upper surface of the substrate, a lower electrode hole that extends through the first and second supporter patterns on the substrate in the first direction, an interface film on side walls and a bottom surface of the lower electrode hole, a lower electrode inside of the lower electrode hole on the interface film, a capacitor dielectric film that is in physical contact with side walls of the interface film, an uppermost surface of the interface film, and an uppermost surface of the lower electrode, the uppermost surface of the interface film is formed on a same plane as an upper surface of the second supporter pattern.

Abstract: A semiconductor device includes a substrate, a capacitor contact structure electrically connected to the substrate, and a lower electrode connected to the capacitor contact structure. The lower electrode includes a first electrode layer and a second electrode layer, the second electrode layer is on the first electrode layer, and the first electrode layer includes a group 14 element. The device includes a capacitor insulating layer covering the lower electrode, and an upper electrode covering the capacitor insulating layer. The first electrode layer includes an outer sidewall in contact with the capacitor insulating layer, the first electrode layer includes an inner sidewall in contact with the second electrode layer, and a concentration of the group 14 element in the inner sidewall of the first electrode layer is higher than a concentration of the group 14 element in the outer sidewall of the first electrode layer.

Abstract: The present invention provides an abrasive comprising ?-alumina particles having a polyhedral crystal structure, wherein the ?-alumina particles have an average diameter (D50) of 300 nm to 10 ?m and a bulk density of 0.2-0.5 g/mL, a [0001] face in the crystal structure of the ?-alumina particles occupies 10-20% on the basis of the total crystal face area, and the amount of ?-alumina particles is 85-100 wt % on the basis of the total weight. The abrasive of the present invention comprises ?-alumina particles satisfying predetermined particle size and density ranges while having a polyhedral crystal structure, and thus provides excellent dispersibility in a polishing slurry to enable a polishing rate to increase, while minimizing scratch formation during polishing.

Abstract: A display device according to an embodiment of the present inventive concept includes: a substrate including a first region and a second region; and a plurality of pixels disposed on the substrate, wherein the plurality of pixels each include a first data line and a second data line overlapping a pixel electrode, a first capacitance between the first data line and the pixel electrode is smaller than a second capacitance between the second data line and the pixel electrode in a pixel disposed in the first region, and the first capacitance between the first data line and the pixel electrode is larger than the second capacitance between the second data line and a pixel electrode in the pixel disposed in the second region.

Abstract: A method of manufacturing a semiconductor device includes forming a three-dimensional (3D) structure on a substrate, forming an adsorption control layer to cover an upper portion of the 3D structure, and forming a material layer on the adsorption control layer and on a lower portion of the 3D structure that is not covered by the adsorption control layer, wherein a minimum thickness of the material layer on the adsorption control layer is less than a maximum thickness of the material layer on the lower portion of the 3D structure.

Abstract: A semiconductor device includes; a bottom electrode on a substrate, a supporting pattern between the bottom electrode and an adjacent bottom electrode, a top electrode covering the bottom electrode and the supporting pattern, and a dielectric layer between the bottom electrode and the top electrode and between the supporting pattern and the top electrode. The bottom electrode may include a first portion including a seam and a second portion on the first portion, a top end of the second portion may be disposed at a height lower than an upper surface of the supporting pattern, and a portion of a bottom end of the second portion may be exposed to the seam.

Abstract: A semiconductor device includes bottom electrodes on a substrate. A supporting pattern is disposed between the bottom electrodes in a plan view. A top electrode covers the bottom electrodes and the supporting pattern. A dielectric layer is disposed between the bottom electrodes and the top electrode and between the supporting pattern and the top electrode. A capping pattern is interposed between the bottom electrodes and the dielectric layer and between the supporting pattern and the dielectric layer. The capping pattern covers at least a portion of a side surface of the supporting pattern and extends to cover a top surface of the supporting pattern and top surfaces of the bottom electrodes.

Abstract: According to an embodiment, a holographic image sensor comprises a lens focusing object light incident from outside of the holographic image sensor to the holographic image sensor, a filter transmitting a predetermined wavelength band of light of the focused object light, a light receiving unit receiving interference light to sense a holographic image, and a reference light source directly emitting reference light having the predetermined wavelength band to the light receiving unit.

Abstract: Disclosed is a spatial property measurement device or color implementation property of a holographic image. According to an aspect of the present embodiment, a spatial property measurement device or color implementation property of a holographic image reproduced by a holographic display device is provided.

Abstract: A method of manufacturing a semiconductor device includes forming a three-dimensional (3D) structure on a substrate, forming an adsorption control layer to cover an upper portion of the 3D structure, and forming a material layer on the adsorption control layer and on a lower portion of the 3D structure that is not covered by the adsorption control layer, wherein a minimum thickness of the material layer on the adsorption control layer is less than a maximum thickness of the material layer on the lower portion of the 3D structure.

Abstract: According to an embodiment, there is provided a reflector reflecting an immersive image output from a projector to a screen to allow a viewer to recognize the immersive image. The reflector comprises a central portion that is flat within a predetermined range with respect to a center of the reflector and a curved portion having a curvature out of the predetermined range.

Abstract: The present disclosure provides a method of managing a system and an apparatus therefor. The method of the present disclosure may include providing a menu management tool for managing a menu of a system, setting an item of the menu and an authority to access the item by receiving an input through the menu management tool, and providing, when a terminal having the authority accesses the system, information regarding the item to the terminal.

Abstract: A method of manufacturing a semiconductor device includes forming a preliminary lower electrode layer on a substrate, the preliminary lower electrode layer including a niobium oxide; converting at least a portion of the preliminary lower electrode layer to a first lower electrode layer comprising a niobium nitride by performing a nitridation process on the preliminary lower electrode layer; forming a dielectric layer on the first lower electrode layer; and forming an upper electrode on the dielectric layer.

Abstract: A semiconductor device and a method of manufacturing the same, the device including a plurality of lower electrodes on a semiconductor substrate; a support pattern connecting the lower electrodes at sides of the lower electrodes; and a dielectric layer covering the lower electrodes and the support pattern, wherein each of the plurality of lower electrodes includes a pillar portion extending in a vertical direction perpendicular to a top surface of the semiconductor substrate; and a protrusion protruding from a sidewall of the pillar portion so as to be in contact with the support pattern, the pillar portion includes a conductive material, the protrusion includes a same conductive material as the pillar portion and is further doped with impurities.

Abstract: A semiconductor device and a method of manufacturing the same, the device including a plurality of lower electrodes on a semiconductor substrate; a support pattern connecting the lower electrodes at sides of the lower electrodes; and a dielectric layer covering the lower electrodes and the support pattern, wherein each of the plurality of lower electrodes includes a pillar portion extending in a vertical direction perpendicular to a top surface of the semiconductor substrate; and a protrusion protruding from a sidewall of the pillar portion so as to be in contact with the support pattern, the pillar portion includes a conductive material, the protrusion includes a same conductive material as the pillar portion and is further doped with impurities.

Abstract: According to an embodiment, a holographic microscope comprises a light source, an optical system splitting light emitted from the light source into an object and a reflective mirror and inducing interference between light reflected by the object or transmitted through the object and light reflected by the reflective mirror, a first image sensor receiving the interference light and sensing interference information for the interference light, a second image sensor receiving the light reflected by the object or transmitted through the object and sensing information for the received light, and an image processor deriving a shape of the object based on the interference information sensed by the first image sensor and the information sensed by the second image sensor.

Abstract: A computer-implemented system and a method for automatic electronic order creation are disclosed. The system and method may be configured to: receive a digitized document comprising embedded metadata related to contents of the digitized document; analyze the embedded metadata to extract a boundary parameter; generate a unique reference identifier associated with the digitized document and the boundary parameter; receive a first input data setting one or more target measurements for one or more predefined periods of time, wherein a sum of the one or more target measurements is less than or equal to the boundary parameter; receive a second input data setting configuration data for achieving the one or more target measurements; and generate an electronic order based on the configuration data.