Abstract: In one example, a semiconductor device can comprise a substrate, a device stack, first and second internal interconnects, and an encapsulant. The substrate can comprise a first and second substrate sides opposite each other, a substrate outer sidewall between the first substrate side and the second substrate side, and a substrate inner sidewall defining a cavity between the first substrate side and the second substrate side. The device stack can be in the cavity and can comprise a first electronic device, and a second electronic device stacked on the first electronic device. The first internal interconnect can be coupled to the substrate and the device stack. The encapsulant can cover the substrate inner sidewall and the device stack and can fill the cavity. Other examples and related methods are disclosed herein.

Abstract: Provided a semiconductor memory device. The semiconductor memory device includes a substrate, a gate electrode on the substrate, a bit line on the substrate, a cell semiconductor pattern on a side of the gate electrode and electrically connected to the bit line, a capacitor structure including a first electrode electrically connected to the cell semiconductor pattern, a second electrode on the first electrode, and a capacitor dielectric film between the first electrode and the second electrode, a bit line strapping line spaced apart from the bit line in the second direction, and electrically connected to the bit line, a bit line selection line between the bit line and the bit line strapping line, and a selection semiconductor pattern between the bit line and the bit line strapping line and electrically connected to all of the bit line, the bit line strapping line, and the bit line selection line.

Abstract: A system and method are provided for determining a pressure associated with a lumen of a body. A wireless sensor is positioned in the lumen of the body. The sensor comprises an LC resonant circuit having a resonant frequency configured to vary in response to changes in pressure in the lumen. One or more sensor calibration parameters are stored at an external base unit. The external based unit generates and transmits an energizing signal. A ring down response is received from the wireless sensor. The system and method determine the resonant frequency of the LC resonant circuit from the ring down response and calculate the pressure in the lumen from the resonant frequency of the LC resonant circuit utilizing the one or more sensor calibration parameters associated with the LC resonant circuit.

Abstract: Disclosed are semiconductor packages and their fabrication methods. The semiconductor package comprises a base semiconductor chip, a chip structure on the base semiconductor chip, a connection terminal between the base semiconductor chip and the chip structure, and a molding layer surrounding the chip structure and the connection terminal. The chip structure includes a first semiconductor chip including a first frontside pad and a first backside pad, and a second semiconductor including a second frontside pad and a second backside pad. A lateral surface of the first semiconductor chip is aligned with that of the second semiconductor chip. The first backside pad and the second frontside pad partially overlap each other when viewed in plan while being in direct contact with each other. The first backside pad and the second frontside pad include the same metal and are formed into a single unitary piece.

Abstract: A semiconductor device and a method of fabricating the same are provided. According to the present invention, a semiconductor device comprises an active region formed in a substrate, and including flat surfaces and hole-shaped recess portions; upper-level plugs disposed over the flat surfaces; a spacer disposed between the upper-level plugs and providing a trench exposing the hole-shaped recess portions; a lower-level plug filling the hole-shaped recess portions; and a buried conductive line disposed over the lower-level plug and partially filling the trench.

Abstract: Provided is a method for synthesizing bipyridine that includes performing a dimerization reaction of a reactant including a piperidine-based compound, a pyridine-based compound, or a mixture thereof in the presence of a catalyst in which an active metal is supported on a composite metal oxide support including silica (SiO2) and alumina (Al2O3).

Abstract: Disclosed are a parking control apparatus for a vehicle and a method thereof. The parking control apparatus includes a processor that searches for at least one parking space in a parking control of a vehicle, calculates an estimated route and a required parking time for each of the at least one parking space, and performs parking control into a target parking space which is one parking space selected from the at least one parking space by a user, and a display that displays the estimated route and the required parking time for each of the at least one parking space.

Abstract: A method for light-weighting an artificial neural network model, the method comprising is provided. The method includes the steps of: learning, on the basis of a channel length of a 1×1 pruning unit applied in a channel direction to each of a plurality of kernels included in an artificial neural network model, a pruning factor for each of the pruning units and a weight for each of the pruning units; and determining, on the basis of at least one of the learned pruning factors and weights, which of the pruning units is to be removed from the artificial neural network model, wherein the channel length of the pruning unit is shorter than a channel length of at least a part of the plurality of kernels.

Abstract: The present invention relates to an image encoding and decoding technique, and more particularly, to an image encoder and decoder using unidirectional prediction. The image encoder includes a dividing unit to divide a macro block into a plurality of sub-blocks, a unidirectional application determining unit to determine whether an identical prediction mode is applied to each of the plurality of sub-blocks, and a prediction mode determining unit to determine a prediction mode with respect to each of the plurality of sub-blocks based on a determined result of the unidirectional application determining unit.

Abstract: A protective film is provided. The protective film includes a release film, a base film which is disposed on the release film and comprises a protective part and a first pull tab part protruding from a first side surface of the protective part, and a first dummy film which is disposed on the release film, does not overlap the base film in a plan view, and comprises a part partially surrounding the first pull tab part, where edges of the base film and edges of the first dummy film are disposed inside edges of the release film in the plan view.

Abstract: The method comprises registering at least one of an internet protocol (IP) address and a media access control (MAC) address of the security devices, generating a plurality of public key and private key pairs, encrypting and storing private keys comprised in the plurality of public key and private key pairs using a master key provided from a master key management unit, selecting any one of a plurality of public key and private key pairs when the access of the security device is approved and providing a certificate comprising the selected public key to the security device, receiving a symmetric key encrypted with the public key of the certificate from the security device, and decrypting the private key using the master key provided from the master key management unit.

Abstract: A super-steep switching device and an inverter device using the same are disclosed. The super-steep switching device includes a semiconductor channel disposed on a substrate and made of a semiconductor material having impact ionization characteristic; a source electrode and a drain electrode in contact with the semiconductor channel, wherein the source electrode and the drain electrode are disposed on the substrate and are spaced apart from each other; and a gate electrode disposed on the semiconductor channel so as to overlap only a portion of the semiconductor channel, wherein a top surface of the semiconductor channel includes a first area overlapping the gate electrode, and a second area non-overlapping the gate electrode, wherein a ratio of a length of the first area and a length of the second area is in a range of 1:0.1 to 0.4.

Abstract: A saturator, configured for use in a water treating apparatus, includes a chamber, in which a first flow path through which first fluid flows is formed, and a plurality of porous membranes disposed in the first flow path, a second flow path formed within the plurality of porous membranes, through which second fluid flows. The first fluid is dissolved in the second fluid, or the second fluid is dissolved in the first fluid. Accordingly, a contact area between the first fluid and the second fluid is enlarged, and thus, a dissolving speed increases.

Abstract: A quantum dot including a core that includes a first semiconductor nanocrystal including zinc and selenium, and optionally sulfur and/or tellurium, and a shell that includes a second semiconductor nanocrystal including zinc, and at least one of sulfur or selenium is disclosed. The quantum dot has an average particle diameter of greater than or equal to about 13 nm, an emission peak wavelength in a range of about 440 nm to about 470 nm, and a full width at half maximum (FWHM) of an emission wavelength of less than about 25 nm. A method for preparing the quantum dot, a quantum dot-polymer composite including the quantum dot, and an electronic device including the quantum dot is also disclosed.

Abstract: A display device comprises a substrate; a circuit array layer comprising pixel drivers, data lines, first dummy lines, and second dummy lines; and a light emitting array layer. The display area comprises middle, first side, and second side regions. The data lines comprise first, second, and third data lines disposed in the middle, first side, and second side regions, respectively. The first dummy lines comprise a first data detour line disposed in the first side region and adjacent to a part of the second data line, and auxiliary lines. The second dummy lines comprise a second data detour line configured to connect the first data detour line to the third data line, and additional lines. The auxiliary lines comprise a bias auxiliary line to which a bias power is applied; and a second power auxiliary line to which a second power is applied.

Abstract: A display device includes: a substrate; a polycrystalline silicon film on the substrate; and a first buffer film between the substrate and the polycrystalline silicon film and having one surface contacting the polycrystalline silicon film and another surface opposite to the one surface, wherein the one surface of the first buffer film has a first root mean square (RMS) roughness range, and the first RMS roughness range is 1.5 nm or less.

Abstract: A tubular structure for a rectangular battery can for an electric vehicle, which is thin and has very high dimensional accuracy in order to contain as much electrolyte as possible within a limited size, and a method of manufacturing the same are disclosed. In particular, extrusion of a material to a predetermined thickness is performed, and drawing of the extruded material to a thickness desired by a final product is performed. Accordingly, desired thickness uniformity of the final product is maintained.

Abstract: An image encoding/decoding method is provided. An image decoding method of the present invention may comprise deriving an intra-prediction mode of a current luma block, deriving an intra-prediction mode of a current chroma block based on the intra-prediction mode of the current luma block, generating a prediction block of the current chroma block based on the intra-prediction mode of the current chroma block, and the deriving of an intra-prediction mode of a current chroma block may comprise determining whether or not CCLM (Cross-Component Linear Mode) can be performed for the current chroma block.

Abstract: An ingot growth apparatus is disclosed. The ingot growth apparatus according to an embodiment of the present invention may comprise: a growth furnace having a main crucible which is disposed inside the growth furnace and in which molten silicon is held in order to grow an ingot; a susceptor formed to surround the outer surface of the main crucible and heating the main crucible; a heater formed to surround the outer surface of the susceptor and including a coil which is supplied with power to generate a magnetic field and heats the susceptor by electromagnetic induction from the magnetic field; and a heat insulation member disposed between the coil and the susceptor.

Abstract: A data receiving device may include a dummy stage block. The dummy stage block may include m dummy stages, wherein m is a natural number greater than or equal to two. Each of the m dummy stages may be configured to remove inter-symbol interference (ISI) from a dummy input signal using dummy coefficient information to generate a dummy output signal free of the ISI. Each of the m dummy stages may be further configured to output the dummy output signal. A normal stage block may include n normal stages, wherein n is a natural number greater than or equal to two. Each of the n normal stages may be configured to remove ISI from an input signal using coefficient information to generate an output signal free of the ISI and may be further configured to output the output signal.