Abstract: A semiconductor device includes a source/drain pattern disposed on a substrate and a source/drain contact connected to the source/drain pattern. The source/drain contact includes a lower contact structure extending in a first direction and an upper contact structure protruding from the lower contact structure. The upper contact structure includes a first sidewall and a second sidewall facing away from each other in the first direction. The first sidewall of the upper contact structure includes a plurality of first sub-sidewalls, and each of the first sub-sidewalls includes a concave surface.

Abstract: An integrated circuit device including a substrate; a fin-type active region protruding from the substrate; a gate line intersecting the fin-type active region and covering a top surface and side walls thereof; a gate insulating capping layer covering the gate line; source/drain regions at sides of the gate line on the fin-type active region; first conductive plugs connected to the source/drain regions; a hard mask layer covering the first conductive plugs; and a second conductive plug between the first conductive plugs, the second conductive plug connected to the gate line by passing through the gate insulating capping layer and having a top surface higher than the top surface of each first conductive plug, wherein the hard mask layer protrudes from the first conductive plugs and toward the second conductive plug so that a portion of the hard mask layer overhangs from an edge of the first conductive plugs.

Abstract: A contents sharing network is provided. An operating method of a control device includes determining a current state of possible states in a contents sharing process over a network; and displaying an icon indicating the current state among a plurality of predefined icons. The states are defined as a combination of at least one item of network connection, device discovery, a type of the discovered device, the number of the discovered devices, and existence of an available additional service.

Abstract: A method for preparing polybutene by polymerization of a raw material of a carbon number 4 (C4) compounds having an isobutene amount of 50 to 75% by weight, is disclosed.

Abstract: An integrated circuit device includes a fin-type active region protruding from a top surface of a substrate and extending in a first direction parallel to the top surface of the substrate, a gate structure intersecting with the fin-type active region and extending on the substrate in a second direction perpendicular to the first direction, a source/drain region on a first side of the gate structure, a first contact structure on the source/drain region, and a contact capping layer on the first contact structure. A top surface of the first contact structure has a first width in the first direction, a bottom surface of the contact capping layer has a second width greater than the first width stated above in the first direction, and the contact capping layer includes a protruding portion extending outward from a sidewall of the first contact structure.

Abstract: A contents sharing network is provided. An operating method of a control device includes determining a current state of possible states in a contents sharing process over a network; and displaying an icon indicating the current state among a plurality of predefined icons. The states are defined as a combination of at least one item of network connection, device discovery, a type of the discovered device, the number of the discovered devices, and existence of an available additional service.

Abstract: An integrated circuit device includes a fin-type active region protruding from a top surface of a substrate and extending in a first direction parallel to the top surface of the substrate, a gate structure intersecting with the fin-type active region and extending on the substrate in a second direction perpendicular to the first direction, a source/drain region on a first side of the gate structure, a first contact structure on the source/drain region, and a contact capping layer on the first contact structure. A top surface of the first contact structure has a first width in the first direction, a bottom surface of the contact capping layer has a second width greater than the first width stated above in the first direction, and the contact capping layer includes a protruding portion extending outward from a sidewall of the first contact structure.

Abstract: A display device includes a display panel to display an image; and a sound generator disposed on a surface of the display panel to vibrate the display panel, wherein distances between each of a plurality of side surfaces of the sound generator and each of a plurality of side surfaces of the display panel respectively corresponding to the each of the plurality of side surfaces of the sound generator are substantially equal.

Abstract: The present disclosure relates to providing user information. In a method for requesting user information of an information requesting device in a mobile communication system, the method includes selecting a callee from a user, acquiring a user identifier (ID) of the selected callee, transmitting a user information request for the selected callee and the user ID to a relay server, evaluating whether an admission message is received from the relay server, and if the admission message is received, receiving user information from the relay server.

Abstract: A semiconductor device includes a source/drain pattern disposed on a substrate and a source/drain contact connected to the source/drain pattern. The source/drain contact includes a lower contact structure extending in a first direction and an upper contact structure protruding from the lower contact structure. The upper contact structure includes a first sidewall and a second sidewall facing away from each other in the first direction. The first sidewall of the upper contact structure includes a plurality of first sub-sidewalls, and each of the first sub-sidewalls includes a concave surface.

Abstract: A method of manufacturing a semiconductor device includes disposing a gas-storage cylinder storing monochlorosilane within a gas supply unit. The monochlorosilane is supplied from the gas-storage cylinder into a process chamber to form a silicon containing layer therein. The gas-storage cylinder includes manganese.

Abstract: A method for preparing polybutene by polymerization of a raw material of a carbon number 4 (C4) compounds having an isobutene amount of 50 to 75% by weight, is disclosed.

Abstract: An operation method and a mobile terminal connected to an electronic device are provided. A wireless communication interface of the electronic device communicates with a mobile device. Content is displayed on an application on a display of the electronic device. A user input is obtained for selecting a piece of content from the displayed content on the application. Based on selecting the piece of content, a user interface on which the selected piece of content is displayed, is displayed on the application as content of a message. A recipient phone number is obtained through the user interference displayed on the application. Based on obtaining the recipient phone number, information for requesting that the mobile device transmits the selected piece of content to the recipient phone number, is transmitted toward the mobile device.

Abstract: A coating film to prevent a conspicuous fingerprint has a water contact angle of no less than 60° so that most of water contained in fingerprints on the coating film evaporates without forming a layer adsorbed on the coating film. Further, the coating film has lipophilicity and has a diiodomethane contact angle of no more than 45° so that the coating film exhibits enhanced affinity to fingerprints, which primarily contain oily components.

Abstract: A vehicle terminal device is provided. The vehicle terminal device includes a first communicator configured to communicate with an apparatus included in the vehicle using a first wireless communication, a second communicator configured to communicate with an apparatus outside the vehicle using a second wireless communication, a detector configured to detect state information of the vehicle, and a controller configured to control the second communicator to broadcast an accident alert message for alerting of an accident involving the vehicle to at least one of an apparatus included in an adjacent vehicle or a traffic management device in response to a determination of the accident based on the state information of the vehicle detected through the detector, and control the second communicator to transmit at least one of information received from the apparatus included in the vehicle through the first communicator or the state information of the vehicle detected through the detector, to an external server.

Abstract: A semiconductor device is provided. The semiconductor device includes a gate spacer that defines a trench on a substrate and includes an upper part and a lower part, a gate insulating film that extends along sidewalls and a bottom surface of the trench and is not in contact with the upper part of the gate spacer, a lower conductive film that extends on the gate insulating film along the sidewalls and the bottom surface of the trench and is not overlapped with the upper part of the gate spacer, and an upper conductive film on an uppermost part of the gate insulating film on the lower conductive film.

Abstract: An integrated circuit device includes a fin-type active region protruding from a top surface of a substrate and extending in a first direction parallel to the top surface of the substrate, a gate structure intersecting with the fin-type active region and extending on the substrate in a second direction perpendicular to the first direction, a source/drain region on a first side of the gate structure, a first contact structure on the source/drain region, and a contact capping layer on the first contact structure. A top surface of the first contact structure has a first width in the first direction, a bottom surface of the contact capping layer has a second width greater than the first width stated above in the first direction, and the contact capping layer includes a protruding portion extending outward from a sidewall of the first contact structure.

Abstract: A method includes providing a plurality of active regions on a substrate, and at least a first device isolation layer between two of the plurality of active regions, wherein the plurality of active regions extend in a first direction; providing a gate layer extending in a second direction, the gate layer forming a plurality of gate lines including a first gate line and a second gate line extending in a straight line with respect to each other and having a space therebetween, each of the first gate line and second gate line crossing at least one of the active regions, providing an insulation layer covering the first device isolation layer and covering the active region around each of the first and second gate lines; and providing an inter-gate insulation region in the space between the first gate line and the second gate line.

Abstract: A semiconductor device includes a substrate, a fin active region pattern on the substrate, the fin active region pattern including an upper region and a lower region, a device isolation layer pattern surrounding the fin active region pattern, a gate pattern on the upper region of the fin active region pattern, and a stressor on the lower region of the fin active region pattern, wherein a top surface of the device isolation layer pattern is lower than a top surface of the upper region and higher than a top surface of the lower region.