Abstract: Method of manufacturing a semiconductor device, includes forming a protective layer over substrate having a plurality of protrusions and recesses. The protective layer includes polymer composition including polymer having repeating units of one or more of: Wherein a, b, c, d, e, f, g, h, and i are each independently H, —OH, —ROH, —R(OH)2, —NH2, —NHR, —NR2, —SH, —RSH, or —R(SH)2, wherein at least one of a, b, c, d, e, f, g, h, and i on each repeating unit is not H. R, R1, and R2 are each independently a C1-C10 alkyl group, a C3-C10 cycloalkyl group, a C1-C10 hydroxyalkyl group, a C2-C10 alkoxy group, a C2-C10 alkoxy alkyl group, a C2-C10 acetyl group, a C3-C10 acetylalkyl group, a C1-C10 carboxyl group, a C2-C10 alkyl carboxyl group, or a C4-C10 cycloalkyl carboxyl group, and n is 2-1000. A resist layer is formed over the protective layer, and the resist layer is patterned.

Abstract: A proximity sensing device which is disposed under the OLED panel and has an emitting module and a receiving module, is provided. The emitting module can emit an invisible light which has a peak wavelength not less than 1000 nm. The receiving module is disposed adjacent to the emitting module and can receive a reflecting light from the reflected invisible light. Therefore, the invisible light passing through the OLED panel will not cause a bright spot on the panel.

Abstract: A proximity sensing device which is disposed under the OLED panel and has an emitting module and a receiving module, is provided. The emitting module can emit an invisible light which has a peak wavelength not less than 1000 nm. The receiving module is disposed adjacent to the emitting module and can receive a reflecting light from the reflected invisible light. Therefore, the invisible light passing through the OLED panel will not cause a bright spot on the panel.