Patents by Inventor Jing-Jie Dai
Jing-Jie Dai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230134581Abstract: A light-emitting device includes a first nitride semiconductor structure; a stress relief structure on the first nitride semiconductor structure including a plurality of narrow band gap layers and a plurality of wide band gap layers alternately stacked, wherein one of the plurality of wide band gap layers includes a plurality of wide band gap sub-layers and one of the plurality of wide band gap sub-layers includes aluminum; an active structure on the stress relief structure including a plurality of quantum well layers and a plurality of barrier layers alternately stacked, wherein one of the plurality of barrier layers includes a plurality of barrier sub-layers and one of the plurality of barrier sub-layers includes aluminum, an aluminum composition of the wide band gap sub-layer is greater than or equal to that of the barrier sub-layer, and an average aluminum composition of the wide band gap layer is greater than that of the barrier layer; and an electron blocking structure on the active structure.Type: ApplicationFiled: November 2, 2022Publication date: May 4, 2023Inventors: Chia-Ming LIU, Chen OU, Jing-Jie DAI, Shih-Wei WANG, Chih-Ciao YANG, Feng-Wen HUANG, Dian-Ying HU, Yu-Hsiang YEH
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Patent number: 11127883Abstract: A semiconductor device includes: a first semiconductor layer; a second semiconductor layer including a first dopant of a first conductivity type and a second dopant of a second conductivity type, wherein the first dopant has a doping concentration, and the first conductivity type is different from the second conductivity type; a third semiconductor layer on the second semiconductor layer, wherein the third semiconductor layer includes a third dopant including a doping concentration higher than the doping concentration of the first dopant; and an active region between the first semiconductor layer and the second semiconductor layer; wherein the second semiconductor layer includes a bottom surface facing the active region, and the active region includes a top surface facing the second semiconductor layer, and a distance between the bottom surface of the second semiconductor layer and the top surface of the active region is not less than 2 nm.Type: GrantFiled: May 22, 2020Date of Patent: September 21, 2021Assignee: EPISTAR CORPORATIONInventors: Jing-Jie Dai, Tzu-Chieh Hu
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Publication number: 20200287082Abstract: A semiconductor device includes: a first semiconductor layer; a second semiconductor layer including a first dopant of a first conductivity type and a second dopant of a second conductivity type, wherein the first dopant has a doping concentration, and the first conductivity type is different from the second conductivity type; a third semiconductor layer on the second semiconductor layer, wherein the third semiconductor layer includes a third dopant including a doping concentration higher than the doping concentration of the first dopant; and an active region between the first semiconductor layer and the second semiconductor layer; wherein the second semiconductor layer includes a bottom surface facing the active region, and the active region includes a top surface facing the second semiconductor layer, and a distance between the bottom surface of the second semiconductor layer and the top surface of the active region is not less than 2 nm.Type: ApplicationFiled: May 22, 2020Publication date: September 10, 2020Inventors: Jing-Jie DAI, Tzu-Chieh HU
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Patent number: 10665750Abstract: A semiconductor device includes: a first semiconductor layer; a second semiconductor layer including a first dopant of a first conductivity type and a second dopant of a second conductivity type, wherein the first dopant has a doping concentration, and the first conductivity type is different from the second conductivity type; a third semiconductor layer on the second semiconductor layer, wherein the third semiconductor layer includes a third dopant including a doping concentration higher than the doping concentration of the first dopant; and an active region between the first semiconductor layer and the second semiconductor layer; wherein the second semiconductor layer includes a bottom surface facing the active region, and the active region includes a top surface facing the second semiconductor layer, and a distance between the bottom surface of the second semiconductor layer and the top surface of the active region is not less than 2 nm.Type: GrantFiled: November 7, 2018Date of Patent: May 26, 2020Assignee: Epistar CorporationInventors: Jing-Jie Dai, Tzu-Chieh Hu
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Publication number: 20190157511Abstract: A semiconductor device includes: a first semiconductor layer; a second semiconductor layer including a first dopant of a first conductivity type and a second dopant of a second conductivity type, wherein the first dopant has a doping concentration, and the first conductivity type is different from the second conductivity type; a third semiconductor layer on the second semiconductor layer, wherein the third semiconductor layer includes a third dopant including a doping concentration higher than the doping concentration of the first dopant; and an active region between the first semiconductor layer and the second semiconductor layer; wherein the second semiconductor layer includes a bottom surface facing the active region, and the active region includes a top surface facing the second semiconductor layer, and a distance between the bottom surface of the second semiconductor layer and the top surface of the active region is not less than 2 nm.Type: ApplicationFiled: November 7, 2018Publication date: May 23, 2019Inventors: Jing-Jie DAI, Tzu-Chieh HU
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Patent number: 9831385Abstract: A semiconductor light-emitting device includes a substrate having an upper surface and a plurality of bumps positioned on the upper surface in a periodic manner, a first conductive type semiconductor layer positioned on the substrate, a light-emitting structure positioned on the first conductive type semiconductor layer, and a second conductive type semiconductor layer positioned on the light-emitting structure. The first conductive type semiconductor layer includes a plurality of protrusions each facing a portion of the substrate between the bumps, the protrusions are positioned in a ring manner at a peripheral region of the first conductive type semiconductor layer, and the protrusions are spaced apart from the bumps.Type: GrantFiled: July 1, 2013Date of Patent: November 28, 2017Assignee: EPISTAR CORPORATIONInventors: Jing Jie Dai, Yen Chieh Huang, Shu Ying Yang
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Publication number: 20130313597Abstract: A semiconductor light-emitting device includes a substrate having an upper surface and a plurality of bumps positioned on the upper surface in a periodic manner, a first conductive type semiconductor layer positioned on the substrate, a light-emitting structure positioned on the first conductive type semiconductor layer, and a second conductive type semiconductor layer positioned on the light-emitting structure. The first conductive type semiconductor layer includes a plurality of protrusions each facing a portion of the substrate between the bumps, the protrusions are positioned in a ring manner at a peripheral region of the first conductive type semiconductor layer, and the protrusions are spaced apart from the bumps.Type: ApplicationFiled: July 1, 2013Publication date: November 28, 2013Applicant: Huga Optotech Inc.Inventors: JING JIE DAI, YEN CHIEH HUANG, SHU YING YANG
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Patent number: 8476658Abstract: A semiconductor light-emitting device includes a substrate having an upper surface and a plurality of bumps positioned over the upper surface in a periodic manner, a first conductive type semiconductor layer positioned over the substrate, a light-emitting structure positioned over the first conductive type semiconductor layer, and a second conductive type semiconductor layer positioned over the light-emitting structure. The first conductive type semiconductor layer includes a plurality of protrusions each facing a portion of the substrate between the bumps, the protrusions are positioned in a ring manner at a peripheral region of the first conductive type semiconductor layer, and the protrusions are spaced apart from the bumps.Type: GrantFiled: January 6, 2010Date of Patent: July 2, 2013Inventors: Jing Jie Dai, Yen Chieh Huang, Shu Ying Yang
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Patent number: 8247837Abstract: The invention discloses a light-emitting diode. In an embodiment, the light-emitting diode includes a substrate, a first doping type semiconductor layer, a second doping type semiconductor layer, a light-emitting layer and plural laminated structures. The first doping type semiconductor layer, the light-emitting layer and the second doping type semiconductor layer are formed on the substrate in sequence. The plural laminated structures are formed on the top surface of the second doping type semiconductor layer such that the top surface is partially exposed. Each laminated structure consists of plural transparent insulating layers which have their respective refractive indices. Additionally, each of the laminated structures is formed in a way of upwardly stacking the transparent insulating layers in sequence with the refractive indices of the transparent insulating layers decreasing gradually, so as to enhance the light-extraction efficiency and the lighting efficiency of the light-emitting diode.Type: GrantFiled: April 10, 2009Date of Patent: August 21, 2012Assignee: Huga Optotech, Inc.Inventors: Su-Hui Lin, Sheng-Hsien Hsu, Jing-Jie Dai, Tzong Liang Tsai
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Patent number: 8232567Abstract: A light emitting device, includes a substrate; a first semiconductor layer on the substrate; an active layer on the first semiconductor layer; a second semiconductor layer on the active layer; a transparent conductive layer on the second semiconductor layer; and a plurality of pillar structures with a hollow structure in the portion surface of the first semiconductor layer, thereby, the light extraction efficiency of the light emitting device can be improved due to the pillar structures with a hollow structure.Type: GrantFiled: April 17, 2009Date of Patent: July 31, 2012Assignee: HUGA Optotech Inc.Inventors: Jing-Jie Dai, Wen-Chung Shih, Bo-Yuan Huang, Su-Hui Lin, Yu-Chieh Huang
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Patent number: 8044422Abstract: A semiconductor light-emitting device includes a substrate having an upper surface and a plurality of bumps positioned on the upper surface, a first conductive type semiconductor layer positioned on the substrate, a light-emitting structure positioned on the first conductive type semiconductor layer, and a second conductive type semiconductor layer positioned on the light-emitting structure. In one embodiment of the present disclosure, each of the bumps has a top plane substantially parallel to the upper surface, the first conductive type semiconductor layer has a plurality of protrusions each facing a portion of the substrate between the bumps, and the protrusions are spaced apart from the bumps.Type: GrantFiled: January 6, 2010Date of Patent: October 25, 2011Assignee: Huga Optotech Inc.Inventors: Jing Jie Dai, Yen Chieh Huang, Shu Ying Yang
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Publication number: 20110121348Abstract: A semiconductor light-emitting device includes a substrate having an upper surface and a plurality of bumps positioned on the upper surface in a periodic manner, a first conductive type semiconductor layer positioned on the substrate, a light-emitting structure positioned on the first conductive type semiconductor layer, and a second conductive type semiconductor layer positioned on the light-emitting structure. The first conductive type semiconductor layer includes a plurality of protrusions each facing a portion of the substrate between the bumps, the protrusions are positioned in a ring manner at a peripheral region of the first conductive type semiconductor layer, and the protrusions are spaced apart from the bumps.Type: ApplicationFiled: January 6, 2010Publication date: May 26, 2011Applicant: HUGA OPTOTECH INC.Inventors: JING JIE DAI, YEN CHIEH HUANG, SHU YING YANG
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Publication number: 20110121334Abstract: A semiconductor light-emitting device includes a substrate having an upper surface and a plurality of bumps positioned on the upper surface, a first conductive type semiconductor layer positioned on the substrate, a light-emitting structure positioned on the first conductive type semiconductor layer, and a second conductive type semiconductor layer positioned on the light-emitting structure. In one embodiment of the present disclosure, each of the bumps has a top plane substantially parallel to the upper surface, the first conductive type semiconductor layer has a plurality of protrusions each facing a portion of the substrate between the bumps, and the protrusions are spaced apart from the bumps.Type: ApplicationFiled: January 6, 2010Publication date: May 26, 2011Applicant: HUGA OPTOTECH INC.Inventors: JING JIE DAI, YEN CHIEH HUANG, SHU YING YANG
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Publication number: 20100244053Abstract: A light emitting device, includes a substrate; a first semiconductor layer on the substrate; an active layer on the first semiconductor layer; a second semiconductor layer on the active layer; a transparent conductive layer on the second semiconductor layer; and a plurality of pillar structures with a hollow structure in the portion surface of the first semiconductor layer, thereby, the light extraction efficiency of the light emitting device can be improved due to the pillar structures with a hollow structure.Type: ApplicationFiled: April 17, 2009Publication date: September 30, 2010Inventors: Jing-Jie DAI, Wen-Chung Shih, Bo-Yuan Huang, Su-Hui Lin, Yu-Chieh Huang
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Patent number: 7804104Abstract: The invention discloses a light-emitting diode, including a substrate, a first conductive type semiconductor layer, a second conductive type semiconductor layer, a light-emitting layer and plural laminated structures. The first conductive type semiconductor layer, the light-emitting layer and the second conductive type semiconductor layer are formed on the substrate in sequence. The plural laminated structures are formed on the upper surface of the second conductive type semiconductor layer such that the upper surface is partially exposed. Each laminated structure consists of at least one first insulated layer with a high refractive index and at least one second insulated layer with a low refractive index, where the at least one first insulated layer and the at least one second insulated layer are alternately formed to obtain said each laminated structure. Thereby, light emitted from the light-emitting layer can be reflected by the laminated structures to enhance the light-extraction efficiency.Type: GrantFiled: April 10, 2009Date of Patent: September 28, 2010Assignee: Huga Optotech Inc.Inventors: Su-Hui Lin, Sheng-Hsien Hsu, Jing-Jie Dai, Tzong Liang Tsai
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Publication number: 20100176408Abstract: The invention discloses a light-emitting diode, including a substrate, a first conductive type semiconductor layer, a second conductive type semiconductor layer, a light-emitting layer and plural laminated structures. The first conductive type semiconductor layer, the light-emitting layer and the second conductive type semiconductor layer are formed on the substrate in sequence. The plural laminated structures are formed on the upper surface of the second conductive type semiconductor layer such that the upper surface is partially exposed. Each laminated structure consists of at least one first insulated layer with a high refractive index and at least one second insulated layer with a low refractive index, where the at least one first insulated layer and the at least one second insulated layer are alternately formed to obtain said each laminated structure. Thereby, light emitted from the light-emitting layer can be reflected by the laminated structures to enhance the light-extraction efficiency.Type: ApplicationFiled: April 10, 2009Publication date: July 15, 2010Inventors: Su-Hui LIN, Sheng-Hsien Hsu, Jing-Jie Dai, Tzong Liang Tsai
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Publication number: 20100176419Abstract: The invention discloses a light-emitting diode. In an embodiment, the light-emitting diode includes a substrate, a first doping type semiconductor layer, a second doping type semiconductor layer, a light-emitting layer and plural laminated structures. The first doping type semiconductor layer, the light-emitting layer and the second doping type semiconductor layer are formed on the substrate in sequence. The plural laminated structures are formed on the top surface of the second doping type semiconductor layer such that the top surface is partially exposed. Each laminated structure consists of plural transparent insulating layers which have their respective refractive indices. Additionally, each of the laminated structures is formed in a way of upwardly stacking the transparent insulating layers in sequence with the refractive indices of the transparent insulating layers decreasing gradually, so as to enhance the light-extraction efficiency and the lighting efficiency of the light-emitting diode.Type: ApplicationFiled: April 10, 2009Publication date: July 15, 2010Inventors: Su-Hui LIN, Sheng-Hsien Hsu, Jing-Jie Dai, Tzong Liang Tsai