Abstract: A method and system for providing access to a resource. A request for an individual within an organization to access the resource is received. In response to the request having been received, at least one constraint for accessing the resource by the individual is ascertained, based on respective constraints for accessing the resource by one or more other individuals in the organization. The one or more other individuals have a same role in the organization as the individual or have a respective relationship with the individual. The at least one constraint is provided to the individual.

Abstract: A tubular LED lamp to be used with an external electronic power controlling device which is adapted to provide an input voltage to the lamp, comprising: a LED unit; a driving circuit for the LED unit; and a safety detection circuit adapted to detect whether the tubular LED lamp is correctly connected to an external lamp fixture; characterized in that further comprising: a holding current providing circuit adapted to provide a holding current through the electronic controlling device so as to maintain the electronic controlling device to be conductive; and a controlling circuit adapted to synchronize the safety detection circuit with the holding current providing circuit such that the safety detection circuit is adapted to carry out the detection when the hold current providing circuit is adapted to provide the holding current and the electronic controlling device is conductive; wherein the controlling circuit is adapted to deactivate the holding current providing circuit and the safety detection circuit after

Abstract: Devices, such as transistors, that use bismuth to create ohmic contacts are provided, as are methods of manufacturing the same. The transistors, such as field-effect transistors, can include one or more two-dimensional materials, and electrical contact areas can be created on the two-dimensional material(s) using bismuth. The bismuth can help to provide energy-barrier free, ohmic contacts, and the resulting devices can have performance levels that rival or exceed state-of-the-art devices that utilize three-dimensional materials, like silicon. The two-dimensional materials can include transition metal dichalcogenides, such as molybdenum disulfide.

Abstract: Atomically thin layers including pores, their method of manufacture, and their use are disclosed. In some embodiments, pores may be formed in an atomically thin layer by growing the atomically thin layer on exposed portions of a substrate that includes islands comprising a material that is different than the material of the substrate. In some embodiments, pores and/or defects may be formed in an atomically thin layer by employing growth conditions that promote the formation of defects and/or pores. In certain embodiments, pores and/or defects may be etched to enlarge their size.

Abstract: Atomically thin layers including pores, their method of manufacture, and their use are disclosed. In some embodiments, pores may be formed in an atomically thin layer by growing the atomically thin layer on exposed portions of a substrate that includes islands comprising a material that is different than the material of the substrate. In some embodiments, pores and/or defects may be formed in an atomically thin layer by employing growth conditions that promote the formation of defects and/or pores. In certain embodiments, pores and/or defects may be etched to enlarge their size.

Abstract: Devices, such as transistors, that use bismuth to create ohmic contacts are provided, as are methods of manufacturing the same. The transistors, such as field-effect transistors, can include one or more two-dimensional materials, and electrical contact areas can be created on the two-dimensional material(s) using bismuth. The bismuth can help to provide energy-barrier free, ohmic contacts, and the resulting devices can have performance levels that rival or exceed state-of-the-art devices that utilize three-dimensional materials, like silicon. The two-dimensional materials can include transition metal dichalcogenides, such as molybdenum disulfide.

Abstract: In a method provided herein for forming a chalcogenide film on a substrate, an elemental solid is exposed to a hydrogen halide gas in a heated reaction environment at a temperature at which the hydrogen halide gas promotes the elemental solid to evolve into an elemental halide-based gas. The elemental halide-based gas is then exposed to a chalcogen gas provided in the heated reaction environment, at a temperature at which the elemental halide-based gas is reactive with the chalcogen gas to produce a solid chalcogenide reaction product. A substrate is provided in the heated reaction environment for deposition thereon of a solid film of the solid chalcogenide reaction product that results from exposure of the elemental halide-based gas to the chalcogen gas in the heated reaction environment.

Abstract: The present invention provides a device or medical device comprising a graphene coating. Particularly, the graphene coating features substantially high transmittance, biointegrity and biocompatibility.

Abstract: A two-dimensional transition-metal dichalcogenide layer is grown by reacting a non- or low-volatile source material with a volatilized halogen or halide compound to produce a volatilized composition comprising at least one reaction product. The volatilized composition is flowed through an open chamber of a tube furnace with a temperature gradient, wherein the temperature changes along a path through which the volatilized composition flows through the open chamber of the tube furnace. Where the temperature along the path in the open chamber is in a reaction-temperature range, the volatilized composition is deposited as a two-dimensional crystalline transition-metal dichalcogenide layer.

Abstract: A thermo-mechanical bolometer includes a substrate and a sensing component mounted on the substrate. The sensing element comprises (a) at least one thermal-actuation component mounted in parallel with the substrate and (b) a strain sensor mounted on the at least one layer of thermal-actuation component. The at least one thermal-actuation component alone or in combination (a) absorbs electromagnetic waves and converts energy from absorbed electromagnetic waves into a change in temperature and (b) converts the change in temperature into a deformation of the at least one layer. The strain sensor comprises a layer of fragments with a gap space between the fragments, wherein the strain sensor senses the deformation or mechanical movement and exhibits a change in electrical resistance in response to the sensed deformation or mechanical movement.

Abstract: Atomically thin layers including pores, their method of manufacture, and their use are disclosed. In some embodiments, pores may be formed in an atomically thin layer by growing the atomically thin layer on exposed portions of a substrate that includes islands comprising a material that is different than the material of the substrate. In some embodiments, pores and/or defects may be formed in an atomically thin layer by employing growth conditions that promote the formation of defects and/or pores. In certain embodiments, pores and/or defects may be etched to enlarge their size.

Abstract: A thermo-mechanical bolometer includes a substrate and a sensing component mounted on the substrate. The sensing element comprises (a) at least one thermal-actuation component mounted in parallel with the substrate and (b) a strain sensor mounted on the at least one layer of thermal-actuation component. The at least one thermal-actuation component alone or in combination (a) absorbs electromagnetic waves and converts energy from absorbed electromagnetic waves into a change in temperature and (b) converts the change in temperature into a deformation of the at least one layer. The strain sensor comprises a layer of fragments with a gap space between the fragments, wherein the strain sensor senses the deformation or mechanical movement and exhibits a change in electrical resistance in response to the sensed deformation or mechanical movement.

Abstract: In a method provided herein for forming a chalcogenide film on a substrate, an elemental solid is exposed to a hydrogen halide gas in a heated reaction environment at a temperature at which the hydrogen halide gas promotes the elemental solid to evolve into an elemental halide-based gas. The elemental halide-based gas is then exposed to a chalcogen gas provided in the heated reaction environment, at a temperature at which the elemental halide-based gas is reactive with the chalcogen gas to produce a solid chalcogenide reaction product. A substrate is provided in the heated reaction environment for deposition thereon of a solid film of the solid chalcogenide reaction product that results from exposure of the elemental halide-based gas to the chalcogen gas in the heated reaction environment.

Abstract: A two-dimensional transition-metal dichalcogenide layer is grown by reacting a non- or low-volatile source material with a volatilized halogen or halide compound to produce a volatilized composition comprising at least one reaction product. The volatilized composition is flowed through an open chamber of a tube furnace with a temperature gradient, wherein the temperature changes along a path through which the volatilized composition flows through the open chamber of the tube furnace. Where the temperature along the path in the open chamber is in a reaction-temperature range, the volatilized composition is deposited as a two-dimensional crystalline transition-metal dichalcogenide layer.

Abstract: A method for preparing a core-shell nanocrystal can include mixing an M-containing precursor solution, an X-containing precursor solution, and an acid or alcohol in an inert atmosphere at a first temperature to form a reaction mixture; maintaining the reaction mixture at the first temperature to grow the MX core of the nanocrystal; raising the temperature of the reaction mixture to a second temperature; and maintaining the reaction mixture at the second temperature to grow a shell of the nanocrystal.

Abstract: A transparent electrode can include a graphene sheet on a substrate, a layer including a conductive polymer disposed over the graphene sheet, and a plurality of semiconducting nanowires, such as ZnO nanowires, disposed over the layer including the conductive polymer.

Abstract: A process of removing SO2 from a flue gas with a trickling filter using modified ceramsite packing is described. The biological flue gas desulfurization process includes: feeding the flue gas containing sulfur dioxide through the column bottom into the biomembrane trickling filter at certain temperature, contacting with the modified ceramsite biomembrane packing and purifying, which purified flue gas is discharged via the column top; and spraying the nutrient fluid rich in high concentration of the desulfurization strain through the top to the modified ceramsite biomembrane packing, thereby the sulfur-bearing pollution source in the flue gas is degraded, so as to discharge a purified flue gas satisfying the environmental requirements.

Abstract: A transfer stamp comprising a nano-film layer is formed on a substantially transparent polymeric substrate, wherein the substantially transparent polymeric substrate comprises an indirect adhesion layer adhered to the nano-film. The nano-film layer of the transfer stamp is applied to a surface of a target substrate; the nano-film layer is positioned between the indirect adhesion layer and the target substrate.

Abstract: A two-dimensional heterostructure is synthesized by producing a patterned first two-dimensional material on a growth substrate. The first two-dimensional material is patterned to define at least one void through which an exposed region of the growth substrate is exposed. Seed molecules are selectively deposited either on the exposed region of the growth substrate or on the patterned first two-dimensional material. A second two-dimensional material that is distinct from the first two-dimensional material is then grown from the deposited seed molecules.

Abstract: A two-dimensional film (such as graphene) is formed on a surface of a growth substrate. A first surface of the two-dimensional film adheres to the growth substrate, and a second surface of the two-dimensional film is then coated with a conforming carrier layer comprising ethylene vinyl acetate. The surface of the growth substrate is etched to release the two-dimensional film with the conforming carrier layer from the growth substrate, wherein the conforming carrier layer maintains the integrity of the two-dimensional film during and after its release from the growth substrate. The first surface of the two-dimensional film with the conforming carrier layer coating is then applied onto a target substrate to form a graphene coating on the target substrate. The conforming carrier layer is then removed from the two-dimensional film by exposing the conforming carrier layer to a solvent while the two-dimensional film is coating the target substrate.