Patents by Inventor Jing-Pei (Connie) Chou
Jing-Pei (Connie) Chou has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8846163Abstract: A method for removing native oxides from a substrate surface is provided. In one embodiment, the method comprises positioning a substrate having an oxide layer into a processing chamber, exposing the substrate to a gas mixture while forming a volatile film on the substrate and maintaining the substrate at a temperature below 65° C., heating the substrate to a temperature of at least about 75° C. to sublimate the volatile film and remove the oxide layer, and depositing a first layer on the substrate after heating the substrate.Type: GrantFiled: June 5, 2012Date of Patent: September 30, 2014Assignee: Applied Materials, Inc.Inventors: Chien-Teh Kao, Jing-Pei (Connie) Chou, Chiukin (Steven) Lai, Sal Umotoy, Joel M. Huston, Son Trinh, Mei Chang, Xiaoxiong (John) Yuan, Yu Chang, Xinliang Lu, Wei W. Wang, See-Eng Phan
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Publication number: 20140076234Abstract: A multi-chamber processing system includes a transfer chamber, a first processing chamber outfitted to perform CVD, a second processing chamber, and a robot positioned to transfer substrates between the transfer chamber, the first processing chamber, and the second processing chamber. The second processing chamber may include one or a combination of a first electrode and a second electrode comprising a plasma cavity formed therein.Type: ApplicationFiled: October 18, 2013Publication date: March 20, 2014Applicant: APPLIED MATERIALS, INC.Inventors: Chien-Teh KAO, Jing-Pei Connie CHOU, Chiukin (Steven) LAI, Salvador P. UMOTOY, Joel M. HUSTON, Son TRINH, Mei CHANG, Xiaoxiong YUAN, Yu CHANG, Xinliang LU, Wei W. WANG, See-Eng PHAN
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Publication number: 20120244704Abstract: A method for removing native oxides from a substrate surface is provided. In one embodiment, the method comprises positioning a substrate having an oxide layer into a processing chamber, exposing the substrate to a gas mixture while forming a volatile film on the substrate and maintaining the substrate at a temperature below 65° C., heating the substrate to a temperature of at least about 75° C. to sublimate the volatile film and remove the oxide layer, and depositing a first layer on the substrate after heating the substrate.Type: ApplicationFiled: June 5, 2012Publication date: September 27, 2012Inventors: Chien-Teh KAO, Jing-Pei(Connie) CHOU, Chiukin(Steven) LAI, Sal UMOTOY, Joel M. HUSTON, Son TRINH, Mei CHANG, Xiaoxiong (John) YUAN, Yu CHANG, Xinliang LU, Wei W. WANG, See-Eng PHAN
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Publication number: 20110223755Abstract: A method for removing native oxides from a substrate surface is provided. In one embodiment, the method comprises positioning a substrate having an oxide layer into a processing chamber, generating a plasma of a reactive species from a gas mixture within the processing chamber, exposing the substrate to the reactive species while forming a volatile film on the substrate and maintaining the substrate at a temperature below 65° C., heating the substrate to a temperature of at least about 75° C. to vaporize the volatile film and remove the oxide layer, and depositing a first layer on the substrate after heating the substrate.Type: ApplicationFiled: May 20, 2011Publication date: September 15, 2011Inventors: CHIEN-TEH KAO, Jing-Pei(Connie) Chou, Chiukin(Steven) Lai, Sal Umotoy, Joel M. Huston, Son Trinh, Mei Chang, Xiaoxiong (John) Yuan, Yu Chang, Xinliang Lu, Wei W. Wang, See-Eng Phan
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Patent number: 7767024Abstract: In one embodiment, a method for removing native oxides from a substrate surface is provided which includes supporting a substrate containing silicon oxide within a processing chamber, generating a plasma of reactive species from a gas mixture within the processing chamber, cooling the substrate to a first temperature of less than about 65° C. within the processing chamber, and directing the reactive species to the cooled substrate to react with the silicon oxide thereon while forming a film on the substrate. The film usually contains ammonium hexafluorosilicate. The method further provides positioning the substrate in close proximity to a gas distribution plate, and heating the substrate to a second temperature of about 100° C. or greater within the processing chamber to sublimate or remove the film. The gas mixture may contain ammonia, nitrogen trifluoride, and a carrier gas.Type: GrantFiled: June 6, 2008Date of Patent: August 3, 2010Assignee: Appplied Materials, Inc.Inventors: Chien-Teh Kao, Jing-Pei (Connie) Chou, Chiukin (Steven) Lai, Sal Umotoy, Joel M. Huston, Son Trinh, Mei Chang, Xiaoxiong (John) Yuan, Yu Chang, Xinliang Lu, Wei W. Wang, See-Eng Phan
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Publication number: 20090111280Abstract: A method for removing native oxides from a substrate surface is provided. In one embodiment, the method comprises positioning a substrate having an oxide layer into a processing chamber, generating a plasma of a reactive species from a gas mixture within the processing chamber, exposing the substrate to the reactive species while forming a volatile film on the substrate and maintaining the substrate at a temperature below 65° C., heating the substrate to a temperature of at least about 75° C. to vaporize the volatile film and remove the oxide layer, and depositing a first layer on the substrate after heating the substrate.Type: ApplicationFiled: December 4, 2008Publication date: April 30, 2009Applicant: APPLIED MATERIALS, INC.Inventors: Chien-Teh Kao, Jing-Pei (Connie) Chou, Chiukin (Steven) Lai, Sal Umotoy, Joel M. Huston, Son Trinh, Mei Chang, Xiaoxiong (John) Yuan, Yu Chang, Xinliang Lu, Wei W. Wang, See-Eng Phan
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Patent number: 7520957Abstract: A lid assembly for semiconductor processing is provided. In at least one embodiment, the lid assembly includes a first electrode comprising an expanding section that has a gradually increasing inner diameter. The lid assembly also includes a second electrode disposed opposite the first electrode. A plasma cavity is defined between the inner diameter of the expanding section of the first electrode and a first surface of the second electrode.Type: GrantFiled: May 24, 2005Date of Patent: April 21, 2009Assignee: Applied Materials, Inc.Inventors: Chien-Teh Kao, Jing-Pei (Connie) Chou, Chiukin (Steven) Lai, Sal Umotoy, Joel M. Huston, Son Trinh, Mei Chang, Xiaoxiong (John) Yuan, Yu Chang, Xinliang Lu, Wei W. Wang, See-Eng Phan
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Publication number: 20080268645Abstract: In one embodiment, a method for removing native oxides from a substrate surface is provided which includes supporting a substrate containing silicon oxide within a processing chamber, generating a plasma of reactive species from a gas mixture within the processing chamber, cooling the substrate to a first temperature of less than about 65° C. within the processing chamber, and directing the reactive species to the cooled substrate to react with the silicon oxide thereon while forming a film on the substrate. The film usually contains ammonium hexafluorosilicate. The method further provides positioning the substrate in close proximity to a gas distribution plate, and heating the substrate to a second temperature of about 100° C. or greater within the processing chamber to sublimate or remove the film. The gas mixture may contain ammonia, nitrogen trifluoride, and a carrier gas.Type: ApplicationFiled: June 6, 2008Publication date: October 30, 2008Inventors: CHIEN-TEH KAO, Jing-Pei (Connie) Chou, Chiukin (Steven) Lai, Sal Umotoy, Joel M. Huston, Son Trinh, Mei Chang, Xiaoxiong (John) Yuan, Yu Chang, Xinliang Lu, Wei W. Wang, See-Eng Phan
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Patent number: 7396480Abstract: A method for removing native oxides from a substrate surface is provided. In at least one embodiment, the method includes supporting the substrate surface in a vacuum chamber and generating reactive species from a gas mixture within the chamber. The substrate surface is then cooled within the chamber and the reactive species are directed to the cooled substrate surface to react with the native oxides thereon and form a film on the substrate surface. The substrate surface is then heated within the chamber to vaporize the film.Type: GrantFiled: May 24, 2005Date of Patent: July 8, 2008Assignee: Applied Materials, Inc.Inventors: Chien-Teh Kao, Jing-Pei (Connie) Chou, Chiukin (Steven) Lai, Sal Umotoy, Joel M. Huston, Son Trinh, Mei Chang, Xiaoxiong (John) Yuan, Yu Chang, Xinliang Lu, Wei W. Wang, See-Eng Phan
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Publication number: 20050218507Abstract: A lid assembly for semiconductor processing is provided. In at least one embodiment, the lid assembly includes a first electrode comprising an expanding section that has a gradually increasing inner diameter. The lid assembly also includes a second electrode disposed opposite the first electrode. A plasma cavity is defined between the inner diameter of the expanding section of the first electrode and a first surface of the second electrode.Type: ApplicationFiled: May 24, 2005Publication date: October 6, 2005Inventors: Chien-Teh Kao, Jing-Pei (Connie) Chou, Chiukin (Steven) Lai, Sal Umotoy, Joel Huston, Son Trinh, Mei Chang, Xiaoxiong (John) Yuan, Yu Chang, Xinliang Lu, Wei Wang, See-Eng Phan
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Publication number: 20050221552Abstract: A substrate support assembly and method for supporting a substrate are provided. In at least one embodiment, the support assembly includes a body having one or more fluid conduits disposed therethrough, and a support member disposed on a first end of the body. The support member includes one or more fluid channels formed in an upper surface thereof, wherein each fluid channel is in communication with the one or more of the fluid conduits. The support assembly also includes a cooling medium source in fluid communication with the one or more fluid conduits, and a first electrode having a plurality of holes formed therethrough. The first electrode is disposed on the upper surface of the support member such that each of the plurality of holes is in fluid communication with at least one of the one or more fluid channels formed in the upper surface of the support member.Type: ApplicationFiled: May 24, 2005Publication date: October 6, 2005Inventors: Chien-Teh Kao, Jing-Pei (Connie) Chou, Chiukin (Steven) Lai, Sal Umotoy, Joel Huston, Son Trinh, Mei Chang, Xiaoxiong (John) Yuan, Yu Chang, Xinliang Lu, Wei Wang, See-Eng Phan
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Publication number: 20050205110Abstract: A method for removing native oxides from a substrate surface is provided. In at least one embodiment, the method includes supporting the substrate surface in a vacuum chamber and generating reactive species from a gas mixture within the chamber. The substrate surface is then cooled within the chamber and the reactive species are directed to the cooled substrate surface to react with the native oxides thereon and form a film on the substrate surface. The substrate surface is then heated within the chamber to vaporize the film.Type: ApplicationFiled: May 24, 2005Publication date: September 22, 2005Inventors: Chien-Teh Kao, Jing-Pei (Connie) Chou, Chiukin (Steven) Lai, Sal Umotoy, Joel Huston, Son Trinh, Mei Chang, Xiaoxiong (John) Yuan, Yu Chang, Xinliang Lu, Wei Wang, See-Eng Phan