Patents by Inventor Jing S. Ma

Jing S. Ma has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for forming Schottky diode
    Patent number: 5219769
    Abstract: A method for forming a diode provided with electrodes and a semiconductive layer. Such method comprises applying ion beam irradiation to a substrate having a protruding portion at a desired position for monocrystalline diamond formation. In this manner the substrate is and subjected to surface modification thereby effecting a process for diamond crystal growth on the substrate.
    Type: Grant
    Filed: November 23, 1990
    Date of Patent: June 15, 1993
    Assignee: Canon Kabushiki Kaisha
    Inventors: Takao Yonehara, Hiroshi Kawarada, Jing S. Ma, Akio Hiraki