Abstract: A liquid drain valve assembly for a charge air cooler includes a valve housing configured to couple to the charge air cooler, the valve housing having a condensate inlet configured to receive condensate from the charge air cooler, and a condensate outlet. A valve is disposed within the valve housing. The valve includes a diaphragm seated against an inner wall of the valve housing and movable between a first position enabling condensate to flow past the diaphragm and out the condensate outlet to selectively drain condensate from the charge air cooler when the charge air cooler is not in a boosted condition, and a second position preventing condensate flow out the condensate outlet when the charge air cooler is in a boosted condition to thereby isolate the charge air cooler from the atmosphere.

Abstract: The beginning of using Complementary Metal-Oxide-Semiconductor (CMOS) process technology to implement Static Random-Access Memory (SRAM) which transistor number is six. And then reducing transistor number for increasing integration density, but it will diminish the stability of memory, and also may enhance the complexity of access circuit, thus increasing the power consumption. For increasing the integration density of SRAM, and according to the electrical characteristics of reduced transistor number therefore designing the memory possess low power consumption and its corresponding circuits, and then implementing an access system. If electrical characteristic of the other various memories are similar to SRAM, such as Dynamic Random-Access Memory (DRAM), so they can also use the corresponding access circuit of SRAM.

Abstract: Provided are a series of BTK inhibitors, and specifically disclosed are a compound, pharmaceutically acceptable salt thereof, tautomer thereof or prodrug thereof represented by formula (I), (II), (III) or (IV).

Abstract: Devices for detecting an analyte are provided. Devices for voltage sensing of analytes may comprise a plurality of fluidic channels defined in a substrate, each channel having a pair of sensing electrodes disposed in or adjacent to the fluidic channel and defining a detection volume for sensing voltage therein. At least one pair of electromotive electrodes for applying potential along at least one fluidic channel is provided as well.

Abstract: A progressive displaying terminal and a video playing method and an image processing apparatus thereof are provided. The video playing method includes: extracting an odd field and an even field of each frame of an interlaced video, where the interlaced video has an initial resolution higher than a screen resolution of a progressive displaying terminal, and scaling the odd field and the even field of each frame respectively and then playing the odd field and the even field of each frame. In this way, the present disclosure eliminates the need of de-interlacing when playing an interlaced video on a progressive displaying terminal, so the hardware configuration requirements and the cost are reduced and a good picture quality is ensured during playing of the video.

Abstract: Semiconductor devices suitable for narrow pitch applications and methods of fabrication thereof are described herein. In some embodiments, a semiconductor device may include a floating gate having a first width proximate a base of the floating gate that is greater than a second width proximate a top of the floating gate. In some embodiments, a method of shaping a material layer may include (a) oxidizing a surface of a material layer to form an oxide layer at an initial rate; (b) terminating formation of the oxide layer when the oxidation rate is about 90% or below of the initial rate; (c) removing at least some of the oxide layer by an etching process; and (d) repeating (a) through (c) until the material layer is formed to a desired shape. In some embodiments, the material layer may be a floating gate of a semiconductor device.

Abstract: A method for determining an orientation of a screen of an electronic apparatus and an image receiving apparatus are provided. The method for determining the screen orientation includes the following steps of: receiving a screen shared image transmitted by the electronic apparatus; performing line sampling on pixels of the screen shared image; and determining whether the screen is in the landscape orientation or in the portrait orientation according to color values of the sampled pixels. The present disclosure can determine the screen orientation according to color values of the sampled pixels with small amount of operation data and high accuracy.

Abstract: A progressive displaying terminal and a video playing method and an image processing apparatus thereof are provided. The video playing method includes: extracting an odd field and an even field of each frame of an interlaced video, where the interlaced video has an initial resolution higher than a screen resolution of a progressive displaying terminal, and scaling the odd field and the even field of each frame respectively and then playing the odd field and the even field of each frame. In this way, the present disclosure eliminates the need of de-interlacing when playing an interlaced video on a progressive displaying terminal, so the hardware configuration requirements and the cost are reduced and a good picture quality is ensured during playing of the video.

Abstract: A slide switch for constraining a movement of a unit relative to a casing is disclosed in the present invention. The slide switch includes a buckling component, a constraining component and a latch. The buckling component includes a connection portion and an inclined structure. The constraining component includes a block portion and a guide portion. The latch includes a body, a hook portion disposed on the body, a first guide structure disposed on a top of the hook portion, and a contact portion disposed on the body. The hook portion is engaged with the connection portion to constrain the movement of a first unit. The first guide structure pushes the inclined structure to separate the first unit from the casing. The contact portion contacts the block portion to constrain the movement of a second unit, and slides relative to the guide portion to separate the second unit from the casing.

Abstract: A switch mechanism includes a sliding track disposed inside a host module, and a sliding component. An end of the sliding component is pivotally connected to a display module and the other end of the sliding component is slidably installed inside the sliding track. The sliding component slides in a first direction relative to the sliding track while the display module pivots in a first rotary direction relative to the host module. The switch mechanism further includes an activation component for moving to a first position corresponding to a first switch component to activate a first switch component while the sliding component slides in the first direction.

Abstract: Systems, methods, and apparatus for providing a fluid and reduced-toxicity optical media with optical analysis and therapeutic energy delivery. An aspect of the invention provides an aqueous solution of increased-salinity of between about 1% and 35%. An increasing salinity in accordance with the invention provides improved transmissive efficiency at many wavelengths and less toxicity than many existing systems and methods. A catheter having integrated fibers for probing or treating internal lumens or other tissues can include a liquid-inflatable balloon or flushing mechanism using the solution for displacing blood or other obstructions in an optical path between the fiber and targeted tissue. Methods including spectroscopy can be employed with the solution for diagnosing medical conditions associated with diseased vessels or other tissues while reducing the risk of permanent damage resulting from the diagnosis.

Abstract: A luminescent element is disclosed including: a luminescent substrate; and a metal layer with a metal microstructure formed on a surface of the luminescent substrate; wherein the luminescent substrate comprises a luminescent material with a chemical composition of Y2SiO5:Tb. A preparation method of a luminescent element and a luminescence method are also provided. The luminescent element has good luminescence homogeneity, high luminescence efficiency, good luminescence stability and simple structure, and can be used in luminescent devices with ultrahigh brightness.

Abstract: A luminescent element comprises: a luminescent substrate; and a metal layer with a metal microstructure formed on a surface of the luminescent substrate; the luminescent substrate comprises luminescent materials with a chemical composition of Y3AlxGa5-xO12:Tb, and 0?x?5. A preparation method of a luminescent element and a luminescence method are also provided. The luminescent element has good luminescence homogeneity, high luminescence efficiency, good luminescence stability and simple structure, and can be used in luminescent device with ultrahigh brightness.

Abstract: A luminescent element comprises: a luminescent substrate; and a metal layer with a metal microstructure formed on a surface of the luminescent substrate; the luminescent substrate comprises luminescent materials with a chemical composition of Zn2SiO4:Mn. A preparation method of a luminescent element and a luminescence method are also provided. The luminescent element has good luminescence homogeneity, high luminescence efficiency, good luminescence stability and simple structure, and can be used in luminescent device with ultrahigh brightness.

Abstract: A luminescent element including nitride includes a luminescent film and a metal layer with a metal microstructure formed on a surface of the luminescent film; wherein the luminescent film has a chemical composition: Ga1-xAlxN:yRe, wherein Re represents the rare earth element, 0?x?1, 0<y?0.2. A preparation method of a luminescent element including nitride and a luminescence method are also provided. The metal layer is formed on the surface of the luminescent film, and the luminescent element including nitride has simple structure, good luminescence homogeneity, high luminescence efficiency, and good luminescence stability.

Abstract: Described are methods of forming a semiconductor device. Certain methods comprises depositing a film comprising manganese nitride over a dielectric; depositing a copper seed layer over the film; and depositing a copper fill layer over the copper seed layer. Also described are semiconductor devices. Certain semiconductor devices comprise a low-k dielectric layer; a manganese nitride layer overlying the low-k dielectric layer; a seed layer selected from a copper seed layer or electrochemical deposition seed layer overlying the manganese nitride layer; a copper layer overlying the copper seed layer.

Abstract: The present invention generally relates to a floating gate structure and method of forming the same. The floating gate structure has an upper portion which is wider than a middle portion of the floating gate structure. The upper portion may have a flared, rounded or bulbous shape instead of being pointed or having sharp corners. The reduction in pointed or sharp features of the upper portion reduces the electric field intensity near the upper portion, which decreases current leakage through the interpoly dielectric. The method includes forming a nitride cap on the upper surface of the floating gate structure to assist in shaping the floating gate. The floating gate is then formed using multiple selective oxidation and etching processes.

Abstract: Described are manganese-containing films, as well as methods for providing the manganese-containing films. Doping manganese-containing films with Co, Mn, Ru, Ta, Al, Mg, Cr, Nb, Ti or V allows for enhanced copper barrier properties of the manganese-containing films. Also described are methods of providing films with a first layer comprising manganese silicate and a second layer comprising a manganese-containing film.

Abstract: A method and apparatus for depositing films on a substrate is described. The method includes depositing a film on a substrate with feature formed therein or thereon. The feature includes a first surface and a second surface that are at different levels. A least a portion of the deposited film is removed by exposing the substrate to an ion flux from a linear ion source. The ion flux has an ion angular spread of less than or equal to 90 degrees and greater than or equal to 15 degrees. In certain embodiments, the feature can be a nanoscale, high aspect ratio feature such as narrow, deep trench, a small diameter, deep hole, or a dual damascene structure. Such features are often found in integrated circuit devices.

Abstract: A vibration-isolating screw is disclosed. The vibration-isolating screw includes a screw head and a screw tail portion. The screw head includes a first screw body, a first magnetic element, a second screw body, a second magnetic element, a third screw body and a third magnetic element. The first magnetic element and the second magnetic element are mounted on the first screw body and the second screw body, respectively. The third screw body is mounted between the first screw body and the second screw body. The third magnetic element comprises a first end and a second end and is mounted on the third screw body. The first end and the first magnetic element are adjacent and mutual repulsion. The second end and the second magnetic element are adjacent and mutual repulsion. The screw tail portion is connected with the second screw body.