Patents by Inventor Jinman GE

Jinman GE has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11598917
    Abstract: A silicon nitride phased array chip based on a suspended waveguide structure, which includes a silicon nitride waveguide area and a suspended waveguide area. The silicon nitride waveguide area includes a silicon substrate, a silicon dioxide buffer layer, a silicon dioxide cladding layer and a silicon nitride waveguide-based core layer. The silicon nitride waveguide-based core layer includes an optical splitter unit, a first curved waveguide, a thermo-optic phase shifter and a spot-size converter. The suspended waveguide area includes a second curved waveguide and an array grating antenna.
    Type: Grant
    Filed: June 3, 2021
    Date of Patent: March 7, 2023
    Assignees: Chongqing Institute of East China Normal University, SHANGHAI LANGYAN OPTOELECTRONICS TECHNOLOGY CO., LTD., East China Normal University
    Inventors: Heping Zeng, Jijun Feng, Mengyun Hu, Xiaojun Li, Qinggui Tan, Jinman Ge
  • Publication number: 20220155446
    Abstract: A laser velocimetry method and system are provided. In the method, an ultrashort pulse laser is subjected to temporal broadening, beam splitting and spectrum broadening in sequence to from a three-dimensional measurement space. When an object moves in the measurement space, a first signal light s_1, a second signal light s_2, a third signal light s_3 are generated, based on which velocity components vy, vx, and vx of the target object can be obtained, respectively, so as to obtain the velocity of the object in accordance with a formula of v=vx·i+vy·j+vz·k.
    Type: Application
    Filed: November 17, 2021
    Publication date: May 19, 2022
    Inventors: Heping ZENG, Xiaoyue WANG, Ming YAN, Mengyun HU, Jinman GE, Xiaojun LI
  • Publication number: 20210294032
    Abstract: A silicon nitride phased array chip based on a suspended waveguide structure, which includes a silicon nitride waveguide area and a suspended waveguide area. The silicon nitride waveguide area includes a silicon substrate, a silicon dioxide buffer layer, a silicon dioxide cladding layer and a silicon nitride waveguide-based core layer. The silicon nitride waveguide-based core layer includes an optical splitter unit, a first curved waveguide, a thermo-optic phase shifter and a spot-size converter. The suspended waveguide area includes a second curved waveguide and an array grating antenna.
    Type: Application
    Filed: June 3, 2021
    Publication date: September 23, 2021
    Inventors: Heping ZENG, Jijun FENG, Mengyun HU, Xiaojun LI, Qinggui TAN, Jinman GE