Patents by Inventor Jinn Il Choi

Jinn Il Choi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of manufacturing pram using laser interference lithography
    Patent number: 8652876
    Abstract: A method of manufacturing a phase-change random access memory includes: sequentially depositing an insulating layer, a first electrode layer, a phase change material layer, and a transfer material layer on a substrate; forming an array pattern in the transfer material layer using a laser interference lithography process; forming a metal layer on the transfer material layer having the array pattern formed; forming a second electrode layer by removing the transfer material layer; and forming a phase change layer by etching the phase change material layer using the second electrode layer as a mask. Accordingly, the manufacturing process of the phase-change random access memory may achieve an increase in speed and may be simplified.
    Type: Grant
    Filed: November 9, 2012
    Date of Patent: February 18, 2014
    Assignee: Korea Institute of Science and Technology
    Inventors: Young Hwan Kim, Yong Tae Kim, Jinn Il Choi