Abstract: The invention provides a power semiconductor device including an aluminum nitride single crystalline substrate, wherein the dislocation density of the substrate is less than about 105 cm?2 and the Full Width Half Maximum (FWHM) of the double axis rocking curve for the (002) and (102) crystallographic planes is less than about 200 arcsec; and a power semiconductor structure comprising at least one doped AlxGa1-xN layer overlying the aluminum nitride single crystalline substrate.

Abstract: A high electron mobility transistor (HEMT) device with epitaxial layers that include a gallium nitride (GaN) layer co-doped with silicon (Si) and germanium Ge and a method of making the same is disclosed. The HEMT device includes a substrate with epitaxial layers over the substrate. An n-type gallium nitride (GaN) layer is disposed on an interface surface of the epitaxial layers, wherein the n-type GaN layer is co-doped with silicon (Si) and germanium (Ge) that provide a carrier concentration of at least 1×1020 cm?3 and a root mean square (RMS) surface roughness that is no greater than 2 nm for a contact surface of the n-type GaN layer that is interfaced with the interface surface of the epitaxial layers.

Abstract: A high electron mobility transistor (HEMT) device with epitaxial layers that include a gallium nitride (GaN) layer co-doped with silicon (Si) and germanium Ge and a method of making the same is disclosed. The HEMT device includes a substrate with epitaxial layers over the substrate. An n-type gallium nitride (GaN) layer is disposed on an interface surface of the epitaxial layers, wherein the n-type GaN layer is co-doped with silicon (Si) and germanium (Ge) that provide a carrier concentration of at least 1×1020 cm?3 and a root mean square (RMS) surface roughness that is no greater than 2 nm for a contact surface of the n-type GaN layer that is interfaced with the interface surface of the epitaxial layers.

Abstract: The invention provides highly transparent single crystalline AlN layers as device substrates for light emitting diodes in order to improve the output and operational degradation of light emitting devices. The highly transparent single crystalline AlN layers have a refractive index in the a-axis direction in the range of 2.250 to 2.400 and an absorption coefficient less than or equal to 15 cm-1 at a wavelength of 265 nm. The invention also provides a method for growing highly transparent single crystalline AlN layers, the method including the steps of maintaining the amount of Al contained in wall deposits formed in a flow channel of a reactor at a level lower than or equal to 30% of the total amount of aluminum fed into the reactor, and maintaining the wall temperature in the flow channel at less than or equal to 1200° C.

Abstract: A high electron mobility transistor (HEMT) device with epitaxial layers that include a gallium nitride (GaN) layer and an aluminum (Al) based layer having an interface with the GaN layer is disclosed. The Al based layer includes Al and an alloying element that is selected from Group IIIB transition metals of the periodic table of elements. The epitaxial layers are disposed over the substrate. A gate contact, a drain contact, and a source contact are disposed on a surface of the epitaxial layers such that the source contact and the drain contact are spaced apart from the gate contact and each other. The alloying element relieves lattice stress between the GaN layer and the Al based layer while maintaining a high sheet charge density within the HEMT device.

Abstract: A semiconductor device includes a substrate, a relaxation layer, a channel layer, a polarization compensation layer, and a barrier layer. The relaxation layer is over the substrate and configured to reduce a total strain of the semiconductor device. The channel layer is over the relaxation layer. The polarization compensation layer is between the relaxation layer and the channel layer and configured to reduce a polarization between the relaxation layer and the channel layer. The barrier layer is over the relaxation layer and configured to polarize a junction between the barrier layer and the channel layer to induce a two-dimensional electron gas in the channel layer.

Abstract: The invention provides a power semiconductor device including an aluminum nitride single crystalline substrate, wherein the dislocation density of the substrate is less than about 105 cm?2 and the Full Width Half Maximum (FWHM) of the double axis rocking curve for the (002) and (102) crystallographic planes is less than about 200 arcsec; and a power semiconductor structure comprising at least one doped AlxGa1?xN layer overlying the aluminum nitride single crystalline substrate.

Abstract: The invention provides an optoelectronic device adapted to emit ultraviolet light, including an aluminum nitride single crystalline substrate, wherein the dislocation density of the substrate is less than about 105 cm?2 and the Full Width Half Maximum (FWHM) of the double axis rocking curve for the (002) and (102) crystallographic planes is less than about 200 arcsec; and an ultraviolet light-emitting diode structure overlying the aluminum nitride single crystalline substrate, the diode structure including a first electrode electrically connected to an n-type semiconductor layer and a second electrode electrically connected to a p-type semiconductor layer. In certain embodiments, the optoelectronic devices of the invention exhibit a reverse leakage current less than about 10?5 A/cm2 at ?10 V and/or an L80 of at least about 5000 hours at an injection current density of 28 A/cm2.

Abstract: The present disclosure relates to a process of forming a semiconductor device with a high thermal conductivity substrate. According to an exemplary process, a semiconductor precursor including a substrate structure, a buffer structure over the substrate structure, and a channel structure over the buffer structure is provided. The channel structure has a first channel surface and a second channel surface, which is opposite the first channel surface, adjacent to the buffer structure, and has a first polarity. Next, a high thermal conductivity substrate with a thermal conductivity greater than 400 W/mK is formed over the first channel surface. A heat sink carrier is then provided over the high thermal conductivity substrate. Next, the substrate structure and the buffer structure are removed to provide a thermally enhanced semiconductor device with an exposed surface, which has the first polarity.

Abstract: The present disclosure relates to a process of forming a high thermal conductivity substrate for an Aluminum/Gallium/Indium (III)-Nitride semiconductor device. According to an exemplary process, a semiconductor precursor including a substrate structure and a buffer structure is provided. The buffer structure is formed over the substrate structure and has a first buffer surface and a second buffer surface. Herein, the second buffer surface is adjacent to the substrate structure and the first buffer surface is opposite the second buffer surface. Next, a high thermal conductivity substrate with a thermal conductivity greater than 400 W/mK is formed over the first buffer surface. A heat sink carrier is then provided over the high thermal conductivity substrate. The substrate structure is then substantially removed to provide a thermally enhanced precursor for the III-Nitride semiconductor device.

Abstract: Embodiments include high electron mobility transistors (HEMTs) comprising a substrate and a barrier layer including a doped component. The doped component may be a germanium doped layer or a germanium doped pulse. Other embodiments may include methods for fabricating such a HEMT.

Abstract: The invention provides an optoelectronic device adapted to emit ultraviolet light, including an aluminum nitride single crystalline substrate, wherein the dislocation density of the substrate is less than about 105 cm?2 and the Full Width Half Maximum (FWHM) of the double axis rocking curve for the (002) and (102) crystallographic planes is less than about 200 arcsec; and an ultraviolet light-emitting diode structure overlying the aluminum nitride single crystalline substrate, the diode structure including a first electrode electrically connected to an n-type semiconductor layer and a second electrode electrically connected to a p-type semiconductor layer. In certain embodiments, the optoelectronic devices of the invention exhibit a reverse leakage current less than about 10?5 A/cm2 at ?10 V and/or an L80 of at least about 5000 hours at an injection current density of 28 A/cm2.

Abstract: Embodiments include but are not limited to semiconductor devices including a barrier layer, a gallium nitride channel layer having a Ga-face coupled with the barrier layer, and a thermoconductive layer having a thermal conductivity of at least 500 W/(m·K) within 1000 nanometers of a Ga-face of the gallium nitride channel layer. The semiconductor device may be a high-electron-mobility transistor or a semiconductor wafer. Methods for making the same also are described.

Abstract: The invention provides an optoelectronic device adapted to emit ultraviolet light, including an aluminum nitride single crystalline substrate, wherein the dislocation density of the substrate is less than about 105 cm?2 and the Full Width Half Maximum (FWHM) of the double axis rocking curve for the (002) and (102) crystallographic planes is less than about 200 arcsec; and an ultraviolet light-emitting diode structure overlying the aluminum nitride single crystalline substrate, the diode structure including a first electrode electrically connected to an n-type semiconductor layer and a second electrode electrically connected to a p-type semiconductor layer. In certain embodiments, the optoelectronic devices of the invention exhibit a reverse leakage current less than about 10?5 A/cm2 at ?10V and/or an L80 of at least about 5000 hours at an injection current density of 28 A/cm2.

Abstract: Embodiments include apparatuses and methods related to an HFET. In embodiments, one or all of the buffer layer, the back-barrier layer, or the barrier layer may be formed of a digital alloy. In embodiments, the digital alloy may include alternating layers of alloys of aluminum, gallium, and nitrogen. Other embodiments may be disclosed or claimed herein.

Abstract: The invention provides highly transparent single crystalline AlN layers as device substrates for light emitting diodes in order to improve the output and operational degradation of light emitting devices. The highly transparent single crystalline AlN layers have a refractive index in the a-axis direction in the range of 2.250 to 2.400 and an absorption coefficient less than or equal to 15 cm-1 at a wavelength of 265 nm. The invention also provides a method for growing highly transparent single crystalline A1N layers, the method including the steps of maintaining the amount of Al contained in wall deposits formed in a flow channel of a reactor at a level lower than or equal to 30% of the total amount of aluminum fed into the reactor, and maintaining the wall temperature in the flow channel at less than or equal to 1200° C.

Abstract: Embodiments include high electron mobility transistors (HEMTs) comprising a substrate and a barrier layer including a doped component. The doped component may be a germanium doped layer or a germanium doped pulse. Other embodiments may include methods for fabricating such a HEMT.

Abstract: The invention provides a power semiconductor device including an aluminum nitride single crystalline substrate, wherein the dislocation density of the substrate is less than about 105 cm?2 and the Full Width Half Maximum (FWHM) of the double axis rocking curve for the (002) and (102) crystallographic planes is less than about 200 arcsec; and a power semiconductor structure comprising at least one doped AlxGa1?xN layer overlying the aluminum nitride single crystalline substrate.

Abstract: The invention provides an optoelectronic device adapted to emit ultraviolet light, including an aluminum nitride single crystalline substrate, wherein the dislocation density of the substrate is less than about 105 cm?2 and the Full Width Half Maximum (FWHM) of the double axis rocking curve for the (002) and (102) crystallographic planes is less than about 200 arcsec; and an ultraviolet light-emitting diode structure overlying the aluminum nitride single crystalline substrate, the diode structure including a first electrode electrically connected to an n-type semiconductor layer and a second electrode electrically connected to a p-type semiconductor layer. In certain embodiments, the optoelectronic devices of the invention exhibit a reverse leakage current less than about 10?5 A/cm2 at ?10V and/or an L80 of at least about 5000 hours at an injection current density of 28 A/cm2.

Abstract: Misfit dislocations are redirected from the buffer/Si interface and propagated to the Si substrate due to the formation of bubbles in the substrate. The buffer layer growth process is generally a thermal process that also accomplishes annealing of the Si substrate so that bubbles of the implanted ion species are formed in the Si at an appropriate distance from the buffer/Si interface so that the bubbles will not migrate to the Si surface during annealing, but are close enough to the interface so that a strain field around the bubbles will be sensed by dislocations at the buffer/Si interface and dislocations are attracted by the strain field caused by the bubbles and move into the Si substrate instead of into the buffer epi-layer. Fabrication of improved integrated devices based on GaN and Si, such as continuous wave (CW) lasers and light emitting diodes, at reduced cost is thereby enabled.