Patents by Inventor Jinsong Tang
Jinsong Tang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11364941Abstract: A bidirectional windage resistance brake apparatus including a base, a first cylinder, a second cylinder, a first windage resistance plate and a second windage resistance plate, a tail of the first windage resistance plate is hinged with the base; the first windage resistance plate includes a first supporting rod, one end of which is hinged to a middle portion of the first windage resistance plate, and another end is connected with the first cylinder; a tail of the second windage resistance plate is hinged with the base; the second windage resistance plate includes a second supporting rod, one end of which is hinged to a middle portion of the second windage resistance plate, and another end is connected with the second cylinder. The brake apparatus is high in brake efficiency and reliability.Type: GrantFiled: January 18, 2022Date of Patent: June 21, 2022Assignee: CRRC QINGDAO SIFANG ROLLING STOCK RESEARCH INSTITUTE CO., LTD.Inventors: Yunpeng Wang, Fei Ma, Chonghong Yin, Jinsong Tang
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Publication number: 20220135091Abstract: A bidirectional windage resistance brake apparatus including a base, a first cylinder, a second cylinder, a first windage resistance plate and a second windage resistance plate, a tail of the first windage resistance plate is hinged with the base; the first windage resistance plate includes a first supporting rod, one end of which is hinged to a middle portion of the first windage resistance plate, and another end is connected with the first cylinder; a tail of the second windage resistance plate is hinged with the base; the second windage resistance plate includes a second supporting rod, one end of which is hinged to a middle portion of the second windage resistance plate, and another end is connected with the second cylinder. The brake apparatus is high in brake efficiency and reliability.Type: ApplicationFiled: January 18, 2022Publication date: May 5, 2022Inventors: YUNPENG WANG, FEI MA, CHONGHONG YIN, JINSONG TANG
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Patent number: 9105469Abstract: A method and a semiconductor device for incorporating defect mitigation structures are provided. The semiconductor device comprises a substrate, a defect mitigation structure comprising a combination of layers of doped or undoped group IV alloys and metal or non-metal nitrides disposed over the substrate, and a device active layer disposed over the defect mitigation structure. The defect mitigation structure is fabricated by depositing one or more defect mitigation layers comprising a substrate nucleation layer disposed over the substrate, a substrate intermediate layer disposed over the substrate nucleation layer, a substrate top layer disposed over the substrate intermediate layer, a device nucleation layer disposed over the substrate top layer, a device intermediate layer disposed over the device nucleation layer, and a device top layer disposed over the device intermediate layer.Type: GrantFiled: June 30, 2011Date of Patent: August 11, 2015Assignee: Piquant Research LLCInventors: Zubin P. Patel, Tracy Helen Fung, Jinsong Tang, Wai Lo, Arun Ramamoorthy
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Patent number: 9058988Abstract: Methods of depositing layers having reduced interfacial contamination are disclosed herein. The inventive methods may advantageously reduce contamination at the interface between deposited layers, for example, between a deposited layer and an underlying substrate or film. In some embodiments, a method of depositing a layer may include annealing a silicon-containing layer having a first layer disposed thereon in a reducing atmosphere; removing the first layer using an etching process to expose the silicon-containing layer after annealing; and depositing a second layer on the exposed silicon-containing layer.Type: GrantFiled: March 4, 2010Date of Patent: June 16, 2015Assignee: APPLIED MATERIALS, INC.Inventors: Jean R. Vatus, Jinsong Tang, Yihwan Kim, Satheesh Kuppurao, Errol Sanchez
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Patent number: 8586456Abstract: In a first aspect, a method of forming an epitaxial film on a substrate is provided. The method includes (a) providing a substrate; (b) exposing the substrate to a silicon source and a carbon source so as to form a carbon-containing silicon epitaxial film; (c) encapsulating the carbon-containing silicon epitaxial film with an encapsulating film; and (d) exposing the substrate to Cl2 so as to etch the encapsulating film. Numerous other aspects are provided.Type: GrantFiled: May 31, 2011Date of Patent: November 19, 2013Assignee: Applied Materials, Inc.Inventors: Zhiyuan Ye, Yihwan Kim, Xiaowei Li, Ali Zojaji, Nicholas C. Dalida, Jinsong Tang, Xiao Chen, Arkadii V. Samoilov
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Publication number: 20130001641Abstract: A method and a semiconductor device for incorporating defect mitigation structures are provided. The semiconductor device comprises a substrate, a defect mitigation structure comprising a combination of layers of doped or undoped group IV alloys and metal or non-metal nitrides disposed over the substrate, and a device active layer disposed over the defect mitigation structure. The defect mitigation structure is fabricated by depositing one or more defect mitigation layers comprising a substrate nucleation layer disposed over the substrate, a substrate intermediate layer disposed over the substrate nucleation layer, a substrate top layer disposed over the substrate intermediate layer, a device nucleation layer disposed over the substrate top layer, a device intermediate layer disposed over the device nucleation layer, and a device top layer disposed over the device intermediate layer.Type: ApplicationFiled: June 30, 2011Publication date: January 3, 2013Inventors: Zubin P. Patel, Tracy Helen Fung, Jinsong Tang, Wai Lo, Arun Ramamoorthy
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Publication number: 20110230036Abstract: In a first aspect, a method of forming an epitaxial film on a substrate is provided. The method includes (a) providing a substrate; (b) exposing the substrate to a silicon source and a carbon source so as to form a carbon-containing silicon epitaxial film; (c) encapsulating the carbon-containing silicon epitaxial film with an encapsulating film; and (d) exposing the substrate to Cl2 so as to etch the encapsulating film. Numerous other aspects are provided.Type: ApplicationFiled: May 31, 2011Publication date: September 22, 2011Applicant: Applied Materials, Inc.Inventors: Zhiyuan Ye, Yihwan Kim, Xiaowei Li, Ali Zojaji, Nicholas C. Dalida, Jinsong Tang, Xiao Chen, Arkadii V. Samoilov
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Patent number: 7960256Abstract: In a first aspect, a method of forming an epitaxial film on a substrate is provided. The method includes (a) providing a substrate; (b) exposing the substrate to a silicon source and a carbon source so as to form a carbon-containing silicon epitaxial film; (c) encapsulating the carbon-containing silicon epitaxial film with an encapsulating film; and (d) exposing the substrate to Cl2 so as to etch the encapsulating film. Numerous other aspects are provided.Type: GrantFiled: May 12, 2010Date of Patent: June 14, 2011Assignee: Applied Materials, Inc.Inventors: Zhiyuan Ye, Yihwan Kim, Xiaowei Li, Ali Zojaji, Nicholas C. Dalida, Jinsong Tang, Xiao Chen, Arkadii V. Samoilov
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Publication number: 20100255661Abstract: Methods of depositing layers having reduced interfacial contamination are disclosed herein. The inventive methods may advantageously reduce contamination at the interface between deposited layers, for example, between a deposited layer and an underlying substrate or film. In some embodiments, a method of depositing a layer may include annealing a silicon-containing layer having a first layer disposed thereon in a reducing atmosphere; removing the first layer using an etching process to expose the silicon-containing layer after annealing; and depositing a second layer on the exposed silicon-containing layer.Type: ApplicationFiled: March 4, 2010Publication date: October 7, 2010Applicant: APPLIED MATERIALS, INC.Inventors: JEAN R. VATUS, JINSONG TANG, YIHWAN KIM, SATHEESH KUPPURAO, ERROL SANCHEZ
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Publication number: 20100221902Abstract: In a first aspect, a method of forming an epitaxial film on a substrate is provided. The method includes (a) providing a substrate; (b) exposing the substrate to a silicon source and a carbon source so as to form a carbon-containing silicon epitaxial film; (c) encapsulating the carbon-containing silicon epitaxial film with an encapsulating film; and (d) exposing the substrate to Cl2 so as to etch the encapsulating film. Numerous other aspects are provided.Type: ApplicationFiled: May 12, 2010Publication date: September 2, 2010Applicant: Applied Materials, Inc.Inventors: Zhiyuan Ye, Yihwan Kim, Xiaowei Li, Ali Zojaji, Nicholas C. Dalida, Jinsong Tang, Xiao Chen, Arkadii V. Samoilov
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Patent number: 7732305Abstract: In a first aspect, a method of forming an epitaxial film on a substrate is provided. The method includes (a) providing a substrate; (b) exposing the substrate to a silicon source and a carbon source so as to form a carbon-containing silicon epitaxial film; (c) encapsulating the carbon-containing silicon epitaxial film with an encapsulating film; and (d) exposing the substrate to Cl2 so as to etch the encapsulating film. Numerous other aspects are provided.Type: GrantFiled: July 28, 2006Date of Patent: June 8, 2010Assignee: Applied Materials, Inc.Inventors: Zhiyuan Ye, Yihwan Kim, Xiaowei Li, Ali Zojaji, Nicholas C. Dalida, Jinsong Tang, Xiao Chen, Arkadii V. Samoilov
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Patent number: 7682940Abstract: In a first aspect, a first method of forming an epitaxial film on a substrate is provided. The first method includes (a) providing a substrate; (b) exposing the substrate to at least a silicon source so as to form an epitaxial film on at least a portion of the substrate; and (c) exposing the substrate to HCl and Cl2 so as to etch the epitaxial film and any other films formed during step (b). Numerous other aspects are provided.Type: GrantFiled: September 14, 2005Date of Patent: March 23, 2010Assignee: Applied Materials, Inc.Inventors: Zhiyuan Ye, Yihwan Kim, Xiaowei Li, Ali Zojaji, Nicholas C. Dalida, Jinsong Tang, Xiao Chen, Arkadii V. Samoilov
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Publication number: 20060260538Abstract: In a first aspect, a method of forming an epitaxial film on a substrate is provided. The method includes (a) providing a substrate; (b) exposing the substrate to a silicon source and a carbon source so as to form a carbon-containing silicon epitaxial film; (c) encapsulating the carbon-containing silicon epitaxial film with an encapsulating film; and (d) exposing the substrate to Cl2 so as to etch the encapsulating film. Numerous other aspects are provided.Type: ApplicationFiled: July 28, 2006Publication date: November 23, 2006Inventors: Zhiyuan Ye, Yihwan Kim, Xiaowei Li, Ali Zojaji, Nicholas Dalida, Jinsong Tang, Xiao Chen, Arkadii Samoilov
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Publication number: 20060115933Abstract: In a first aspect, a first method of forming an epitaxial film on a substrate is provided. The first method includes (a) providing a substrate; (b) exposing the substrate to at least a silicon source so as to form an epitaxial film on at least a portion of the substrate; and (c) exposing the substrate to HCl and Cl2 so as to etch the epitaxial film and any other films formed during step (b). Numerous other aspects are provided.Type: ApplicationFiled: September 14, 2005Publication date: June 1, 2006Inventors: Zhiyuan Ye, Yihwan Kim, Xiaowei Li, Ali Zojaji, Nicholas Dalida, Jinsong Tang, Xiao Chen, Arkadii Samoilov
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Patent number: 5674275Abstract: A hydrogel adhesive made of a polymer formed by polymerizing a water soluble long chain (meth)acrylate ester monomer (structure I); a hydrogel adhesive made of a copolymer formed by copolymerizing a first water soluble long chain (meth)acrylate ester monomer (structure I) with a second water soluble monomer (structure II); biomedical devices having such hydrogel adhesives; a method of preparing hydrogel adhesives; and a method of adhering biomedical devices to skin.Type: GrantFiled: June 7, 1995Date of Patent: October 7, 1997Assignee: Graphic Controls CorporationInventors: Jinsong Tang, Norbert J. Mruk
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Patent number: 5614586Abstract: A hydrogel adhesive made of a polymer formed by polymerizing a water soluble long chain (meth)acrylate ester monomer (structure I); a hydrogel adhesive made of a copolymer formed by copolymerizing a first water soluble long chain (meth)acrylate ester monomer (structure I) with a second water soluble monomer (structure II); biomedical devices having such hydrogel adhesives; a method of preparing hydrogel adhesives; and a method of adhering biomedical devices to skin.Type: GrantFiled: March 22, 1995Date of Patent: March 25, 1997Assignee: Graphic Controls CorporationInventors: Jinsong Tang, Norbert J. Mruk